SFH 4501
Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehäuse
High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package
SFH 4502 SFH 4503
2001-03-09 1
SFH 4501, SFH 4502, SFH 45 03
Wesentliche Merkmale
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Gute spektrale Anpassung an
Si-Fotoempfänger
Anwendungen
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• Sensorik
• Diskrete Lichtschranken
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 4501 Q62702-P5061 5-mm-LED-Gehäuse (T 13/4), schwarz eingefärbt, Anschluß im
2.54-mm-Raster (1/10’’),
Anodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 13/4), black-colored epoxy resin lens,
solder tabs lead spacing 2.54 mm (1/10’’),
anode marking: short lead
SFH 4502 Q62702-P5062
SFH 4503 Q62702-P5305
Features
• Very highly efficient GaAs-LED
• High reliability
• Spectral match with silicon photodetectors
Applications
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for ste ady and varying intensity
• Sensor technology
• Discrete interrupters
2001-03-09 2
SFH 4501, SFH 4502, SFH 4503
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Sperrspannung
Reverse voltage VR3V
Durchlaßstrom
Forward current IF (DC) 100 mA
Stoßstrom, tp = 10 µs, D = 0
Surge current IFSM 2.2 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung,
freie Beinchenlänge max. 10 mm
Thermal resistance junction - ambient,
lead length between package bottom and PCB
max. 10 mm
RthJA 375 K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 m A, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle
SFH 4501
SFH 4502
SFH 4503
ϕ
± 7
± 18
± 4
Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
SFH 4501, SFH 4502, SFH 4503
2001-03-09 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching tim es, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co35 pF
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.0) V
V
Sperrstrom,
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe32 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe,
IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.2 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2001-03-09 4
SFH 4501, SFH 4502, SFH 4503
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Description Symbol Werte
Values Einheit
Unit
SFH 4501 SFH 4502 SFH 4503
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
63
90 25
50 63
200 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ 550 310 1200 mW/sr
SFH 4501, SFH 4502, SFH 4503
2001-03-09 5
Relati ve Sp ectral Emission
Irel = f (λ)
Forward Cu rrent IF = f (VF)
single pu ls e, tp = 20 µs
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Radiant Intensity
Single pulse , tp = 20 µs
Permissible Pulse Ha ndl i ng
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ιe
Ιe 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
ΙΙ
10
40
10 10
1
10
23
10
10
-3
10
-2
10
10
-1
0
10
2
OHF00041
10-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10-4 10-3 10-2 10-1 100101 2
10s
0.1
0.2
0.5
1
=
5
-1
10
5
A
100
1
10
Max. Permissible Forward Current
IF = f (TA)
OHF00359
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
TA
RthJA = 375 K/W
2001-03-09 6
SFH 4501, SFH 4502, SFH 4503
Radiation Characteristics Ιrel = f (ϕ)
SFH 4501
Radiation Characteristics Ιrel = f (ϕ)
SFH 4502
Radiation Characteristics Ιrel = f (ϕ)
SFH 4503
OHF00859
0˚20˚40˚60˚80˚100˚120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
OHF00810
0˚20˚40˚60˚80˚100˚120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
OHF01142
0˚20˚40˚60˚80˚100˚120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
0˚10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 4501, SFH 4502, SFH 4503
2001-03-09 7
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
SFH 4501
2.54 (0.100)
spacing
27.5 (1.083)
29.5 (1.161)
1.2 (0.047)
1.8 (0.071) Anode 0.4 (0.016)
0.6 (0.024)
GEXY6952
8.2 (0.323)
9.0 (0.354)
7.5 (0.295)
7.8 (0.307)
0.8 (0.031)
0.6 (0.024)
0.4 (0.016)
0.4 (0.016)
Area not flat
5.5 (0.217)
5.9 (0.232)
ø4.8 (0.189)
ø5.1 (0.201)
SFH 4502
GEXY6718
Anode Anode
spacing
2.54 (0.100)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
0.8 (0.031)
Area not flat
1.8 (0.071)
1.2 (0.047)
29.0 (1.142)
27.0 (1.063) 9.0 (0.354)
8.2 (0.323)
ø5.1 (0.201)
ø4.8 (0.189)
7.8 (0.307)
7.5 (0.295) 5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
2001-03-09 8
SFH 4501, SFH 4502, SFH 4503
Maße werden wi e fo lgt angegeben: mm (inch) / Dimensio ns are s pecified as follow s: m m (inc h).
Anode
GEXY6048
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047)
Chip position
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
SFH 4503
SFH 4501, SFH 4502, SFH 4503
2001-03-09 9
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assur ed c haracteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Compo nents use d in life-support de vices or syste ms must be express ly authorize d for such purp ose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assume th at the health of the user may be endangered.
Lötbedingungen
Soldering Conditions
Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering Kolbenlötung (mit 1,5-mm-Kolbenspitze)
Iron Soldering (with 1.5-mm-bit)
Lötbad-
temperatur
Temperature
of the
Soldering
Bath
Maximal
zulässige
Lötzeit
Max. Perm.
Soldering
Time
Abstand
Lötstelle –
Gehäuse
Distance
between
Solder Joint
and Case
Temperatur
des Kolbens
Temperature
of the
Soldering Iron
Maximale
zulässige
Lötzeit
Max.
Permissible
Soldering
Time
Abstand
Lötstelle –
Gehäuse
Distance
between
Solder Joint
and Case
260 °C 10 s ≥ 1.5 mm 300 °C3 s ≥ 1.5 mm
