AON6504 30V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant Application * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial VDS ID (at VGS=10V) 30V 85A RDS(ON) (at VGS=10V) < 1.8m RDS(ON) (at VGS = 4.5V) < 3.3m 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C C V A 322 51 IDSM TA=70C 20 66 IDM TA=25C Continuous Drain Current Units V 85 ID TC=100C Maximum 30 A 41 IAS 60 A Avalanche energy L=0.05mH C EAS 90 mJ VDS Spike VSPIKE 36 V Avalanche Current Power Dissipation B 100ns TC=25C PD TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Rev0: Aug 2011 7.3 Steady-State Steady-State RJA RJC W 4.7 TJ, TSTG Symbol t 10s W 33 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1.1 www.aosmd.com C Max 17 55 1.5 Units C/W C/W C/W Page 1 of 6 AON6504 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS, ID=250A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=4.5V, ID=20A 2.4 3.3 m 120 0.7 1 V 85 A Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance VGS=0V, VDS=0V, f=1MHz Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=15V, ID=20A 0.9 m S 2719 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 1.8 Forward Transconductance Rg nA 2.2 2.8 VSD Reverse Transfer Capacitance 100 1.4 gFS Crss 1.7 2.2 TJ=125C VDS=5V, ID=20A Output Capacitance A 5 1.2 Units V 1 TJ=55C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 1204 pF 169 pF 2.0 3 44 60 nC 21 28 nC 9 nC Gate Drain Charge 7 nC Turn-On DelayTime 9.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 5.2 ns 32.5 ns tf Turn-Off Fall Time 10.3 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/s 19.6 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 42.7 ns nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Aug 2011 www.aosmd.com Page 2 of 6 AON6504 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 3.5V VDS=5V 80 80 10V 60 ID(A) ID (A) 60 40 40 125C VGS=3V 20 20 25C 0 0 0 1 2 3 4 0 5 4 2 3 4 5 6 Normalized On-Resistance 1.6 3 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 2 1 VGS=10V 0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 5 1.0E+02 ID=20A 1.0E+01 4 125C IS (A) RDS(ON) (m ) 1.0E+00 3 125C 1.0E-01 1.0E-02 2 25C 1.0E-03 7.3 4.7 1.0E-04 25C 1 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Aug 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 1.2 Page 3 of 6 AON6504 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4000 Ciss 3000 Capacitance (pF) VGS (Volts) 3500 VDS=15V ID=20A 8 6 4 2500 2000 1500 1000 Coss 2 500 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 500 1000.0 10s RDS(ON) 100s 10.0 1ms DC 1.0 TJ(Max)=150C TC=25C 0.1 400 10s Power (W) 100.0 ID (Amps) Crss 0 TJ(Max)=150C TC=25C 17 5 2 10 300 200 100 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=1.5C/W PD 0.1 7.3 4.7 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Aug 2011 www.aosmd.com Page 4 of 6 AON6504 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 80 Current rating ID(A) 100 90 Power Dissipation (W) 100 70 60 50 40 30 70 60 50 40 30 20 20 10 10 0 0 0 25 50 75 100 125 TCASE ( C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE ( C) Figure 13: Current De-rating (Note F) 150 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJA=55C/W 0.1 PD 0.01 Single Pulse 7.3 4.7 Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: Aug 2011 www.aosmd.com Page 5 of 6 AON6504 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0: Aug 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6