Rev.0 Sept. 25, 2006 page 1 of 4
HL6738MG
Visible High Power Laser Diode ODE-208-047 (Z)
Rev.0
Sept. 25, 2006
Description
The HL6738MG is a 0.68 µm band AlGaInP laser diod e (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for various other types of optical equipment.
Features
• High output power : 35 mW (CW)
• Visible light output : λp = 690 nm Typ
• Small package : φ 5.6 mm
• Low astigmatism : 6 µm Typ (PO = 5 mW)
• Single longitudinal mode
LDPD
13
Internal CircuitPackage Type
• HL6738MG: MG
2
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 35 mW
Pulse optical output power PO(pulse) 50 * mW
Laser diode reverse voltage VR(LD) 2 V
Photo diode reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +70 °C
Storage temperature Tstg –40 to +85 °C
Note: Pulse condition : Pulse width = 100 ns, duty = 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith 30 45 70 mA —
Operating voltage VOP 2.1 2.5 2.8 V PO = 30 mW
Slope efficiency ηs 0.5 0.7 0.9 mW/mA 18(mW) / (I(24mW) – I(6mW))
Beam divergence
parallel to the junction θ// 7 8.5 10.5 ° PO = 30 mW
Beam divergence
parpendicular to the junction θ⊥ 17 19 23 ° PO = 30 mW
Asitgmatism AS — 6 — µm PO = 5 mW , NA = 0.55
Lasing wavelength λp 680 690 695 nm PO = 30 mW
Monitor current IS 0.02 0.1 0.45 mA PO = 30 mW, VR(PD) = 5 V
HL6738MG
Rev.0 Sept. 25, 2006 page 2 of 4
Typical Characteristic Curves
02001601208040
50
40
30
Optical output power, P
O
(mW)
20
10
0
Forward current, I
F
(mA)
Optical Output Power vs. Forward Current
Slope efficiency, η
S
(mW/mA)
Case temperature, T
C
(°C)
Slope Efficiency vs. Case Temperature
60
1.0
0.8
0.6
0.4
0.2
0010 504030
20
T
C
= 60°C
T
C
= 25°C
T
C
= 0°C
T
C
= 70°C
Threshold current, Ith (mA)
Case temperature, T
C
(°C)
Threshold Current vs. Case Temperature
60010 50403020
100
10 70 80
80
70
Lasing wavelength, λp (nm)
Case temperature, T
C
(°C)
Lasing Wavelength vs. Case Temperature
06010 50403020
705
700
695
690
685
680
P
O
= 30 mW
80
70
Relative intensity
Angle, θ ( ° )
Far Field Pattern
-40 -10 0 10 20 30-20-30 40
1.0
0.8
0.6
0.4
0.2
0
P
O
= 30 mW
T
C
= 25°C
Perpendicular
Parallel
Monitor current, I
S
(mA)
Case temperature, T
C
(°C)
Monitor Current vs. Case Temperature
060
1.0
0.8
0.6
0.4
0.2
0
P
O
= 30 mW
V
R(PD)
= 5 V
10 50403020 70 80
HL6738MG
Rev.0 Sept. 25, 2006 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/MG
—
—
0.3 g
1
2
3
5.6 +0
–0.025
φ
1.0 ± 0.1
(0.4)
(90˚)
1.6 ± 0.2
φ
0.4 +0.1
–0
φ
φ4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
As of July, 2002
Unit: mm
HL6738MG
Rev.0 Sept. 25, 2006 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants lice nses of any our rights or any third part y’s pa t ent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ b ears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ p articularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no respo nsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part o f this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
expe riments, when you handle the prod uct.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
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