© 2018 Kingbright. All Rights Reserved. Spec No: DSAO8734 / 1203000037 Rev No: V.5 Date: 08/15/2018 Page 1 / 4
DESCRIPTION
z Made with silicon phototransistor chips
FEATURES
z1.6 mm x 0.8 mm SMD LED, 1.1 mm thickness
zMechanically and spectrally matched to infrared
emitting LED lamp
zPackage: 2000 pcs / reel
zMoisture sensitivity level: 3
zRoHS compliant
APPLICATIONS
z Infrared applied systems
z Optoelectronic switches
z Photodetector control circuits
z Sensor technology
PACKAGE DIMENSIONS
AP1608P1C-P22
1.6 x 0.8 mm Phototransistor
RECOMMENDED SOLDERING PATTERN
(units : mm; tolerance : ± 0.1)
ABSOLUTE MAXIMUM RATINGS at TA=25°C
Parameter Units
Collector-to-Emitter Voltage V
Emitter-to-Collector Voltage V
Power Dissipation at(or below) 25°C Free Air Temperature mW
Operating Temperature °C
Storage Temperature °C
Max.Ratings
30
5
100
-40 to +85
-40 to +85
Note:
1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.1(0.004") unless otherwise noted.
3. The specifications, characteristics and technical data described in the datasheet are subject to
change without prior notice.
4. The device has a single mounting surface. The device must be mounted according to the specifications.