2SK373
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK373
For Audio, High Voltage Amplifier and Constant Current
Applications
• High breakdown voltage: VGDS = −100 V (min)
• High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage VGDS −100 V
Gate current IG 10 mA
Drain power dissipation PD 400 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current IGSS VGS = −80 V, VDS = 0 ⎯ ⎯ −1.0 nA
Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = −100 μA −100 ⎯ ⎯ V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0 0.6 ⎯ 6.5 mA
Gate-source cut-off voltage VGS (OFF) V
DS = 10 V, ID = 0.1 μA −0.4 ⎯ −3.5 V
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, VGS = 0, f = 1 kHz 1.5 4.6 ⎯ mS
Input capacitance Ciss V
DS = 10 V, VGS = 0, f = 1 MHz ⎯ 13 ⎯ pF
Reverse transfer capacitance Crss V
DG = 10 V, ID = 0, f = 1 MHz ⎯ 3 ⎯ pF
Noise figure NF VDS = 10 V, VGS = 0, RG = 100 kΩ,
f = 100 Hz ⎯ 0.5 ⎯ dB
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1C
Weight: 0.21 g (typ.)
2SK373
2007-11-01
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2SK373
2007-11-01
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2SK373
2007-11-01
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RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
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• The information contained herein is presented only as a guide for the applications of our products. No
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• Please contact your sales representative for product-by-product details in this document regarding RoHS
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occurring as a result of noncompliance with applicable laws and regulations.
