BF776 High Performance NPN Bipolar RF Transistor * High performance low noise amplifier 3 * Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz 2 4 * For a wide range of non automotive applications 1 such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE and ISM bands * Easy to use standard package with visible leads * Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF776 Marking R3s 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 4.0 TA = -55 C 3.5 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 50 Base current IB 3 Total power dissipation1) Ptot 200 mW Junction temperature TJ 150 C Ambient temperature TA -55 ... 150 Storage temperature T Stg -55 ... 150 mA TS 90C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 300 K/W 1T S is measured on the emitter lead at the soldering point to the pcb calculation of RthJA please refer to Application Note Thermal Resistance 2For 2010-04-06 1 BF776 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 4 4.7 - V ICES - 1 - nA ICBO - 1 - IEBO - 10 - hFE - 180 - DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 5 V, V BE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 30 mA, VCE = 3 V, pulse measured 2010-04-06 2 BF776 Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT - 46 - GHz Ccb - 0.09 - pF Cce - 0.25 - Ceb - 0.5 - IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure dB F IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt - 0.8 - IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt - 1.3 - G ms - 24 - dB G ma - 12.5 - dB Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain dB IC = 30 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz - 21.5 - f = 6 GHz - 11 - IP 3 - 28 - P-1dB - 13 - Third order intercept point at output2) dBm VCE = 3 V, I C = 30 mA, ZS =ZL=50 , f = 1.8 GHz 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS =ZL=50 , f = 1.8 GHz 1/2 ma = |S 21e / S12e| (k-(k-1) ), Gms = |S21e / S12e | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 1G 2010-04-06 3 BF776 SPICE Parameter For the SPICE model as well as for S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The BF776 SPICE model reflects the typical DC- and RF-performance with high accuracy. 2010-04-06 4 Package SOT343 BF776 Package Outline 0.9 0.1 2 0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 0.1 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2010-04-06 5 BF776 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-04-06 6