Mar.2002
1.
2.
3.
4.
5.
6.
7.
8.
9.
V
V
V
V
V
V
V
10.
11.
12.
13.
14.
15.
16.
U
U
VV
W
W
WPC
UPI
VPI
WPI
NC
NI
P
N
P
P
N
N
UPC
FO
VVPC
17.
18.
19.
NC
OWF
OVF
OUF
AC
R
B
A
Y
Y
C
E
V
F
W
M M S
ZDZ
J
Q
Q
T
H
AC WWW
AHAH G
10
12
N
V
BP
W
U
ZY
ZY
AB - THD
(6 TYP.)
AA - DIA.
(4 TYP.)
3
AE (15 TYP.)
45678911
12 14 16 18
13 15 17 19
P
AF AG
X
AD
NLK
U
2.54 MM DIA. (2 TYP.)
0.5 MM SQ. PIN
(19 TYP.)
GND
GND Si Out
In FOVCCGND
GND Si Out
In FOVCCGND
GND Si Out
In FOVCCGND
GND Si Out
In FOVCC
F
O
Br V
NC
W
N
V
N
U
N
V
N1
PUVWNB
TEMP
Th
V
WPC
W
P
V
WP1
GNDIn VCC
GND Si OUT
W
FO
FO
V
VPC
V
P
V
VP1
GNDIn VCC
GND Si OUT
V
FO
FO
V
UPC
U
P
V
UP1
GNDIn VCC
GND Si OUT
U
FO
FO
Rfo
13
1718 14
11
7 1
19 16
10 5 89
12
6 43 2
15
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
ⵧComplete Output Power
Circuit
ⵧGate Drive Circuit
ⵧProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
ⵧInverters
ⵧUPS
ⵧMotion/Servo Control
ⵧPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM200RSA060 is a 600V,
200 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 200 60
Dimensions Inches Millimeters
A 5.31±0.04 135.0±1.0
B 4.74±0.02 120.5±0.5
C 4.33±0.04 110.0±1.0
D 4.27 10.5
E 3.76±0.02 95.5±0.5
F 3.29 83.5
G 2.01 51.0
H 1.602 40.68
J 1.54 39.0
K 1.37 34.7
L 1.33 33.7
M 1.02 26.0
N 0.95 +0.06/-0.0 24.1 +1.5/-0.0
P 0.84 21.3
Q 0.79 20.0
R 0.780 19.82
Dimensions Inches Millimeters
S 0.69 17.5
T 0.65 16.5
U 0.52 13.2
V 0.43 11.0
W 0.39 10.0
X 0.31 8.0
Y 0.285 7.25
Z 0.24 6.0
AA 0.22 Dia. Dia. 5.5
AD Metric M5 M5
AC 0.128 3.22
AD 0.10 2.6
AE 0.08 2.0
AF 0.07 1.8
AG 0.06 1.6
AH 0.02 0.5
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T -BASE TYPE
INSULATED P ACKAGE
Outline Drawing and Circuit Diagram
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Symbol Ratings Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws —1.47 ~ 1.96 N · m
Mounting Torque, M5 Main Terminal Screw —1.47 ~ 1.96 N · m
Module Weight (Typical) —920 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC)V
D20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC)V
CIN 20 Volts
Fault Output Supply Voltage
(Applied between U
FO
-V
UPC
, V
FO
-V
VPC
, W
FO
-V
WPC
, F
O
-V
NC
)
VFO 20 Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, ±IC200 Amperes
Peak Collector Current, ±ICP 400 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC595 Watts
Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC = 25°C) IC75 Amperes
Peak Collector Current, (TC = 25°C) ICP 150 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC370 Watts
Diode Forward Current IF75 Amperes
Diode DC Reverse Voltage VR(DC) 600 Volts
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 310 400 —Amperes
Over Current Trip Level Brake Part 115 161 —Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V —560 —Amperes
Short Circuit Trip Level Brake Part —241 —Amperes
Over Current Delay Time toff(OC) VD = 15V —10 —µs
Over Temperature Protection OT T rip Level 111 118 125 °C
OTrReset Level —100 —°C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level —12.5 —Volts
Supply V oltage VDApplied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current IDVD = 15V, VCIN = 15V, VN1-VNC —52 72 mA
VD = 15V, VCIN = 15V, VXP1-VXPC —13 18 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal —15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V ——0.01 mA
IFO(L) VD = 15V, VFO = 15V —10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 —ms
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1.0 mA
VCE = VCES, Tj = 125°C——10 mA
Diode Forward Voltage VEC -IC = 200A, VD = 15V, VCIN = 5V —1.9 2.8 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, ICIN = 0V, IC = 200A —1.8 2.7 Volts
VD = 15V, VCIN = 0V, IC = 200A, —1.75 2.63 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.4 0.8 2.0 µs
trr VD = 15V, VCIN = 0 ↔ 15V —0.15 0.3 µs
tC(on) VCC = 300V, IC = 200A —0.4 1.0 µs
toff Tj = 125°C—2.0 2.9 µs
tC(off) —0.6 1.2 µs
Brake Sector
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 75A, —1.8 2.7 Volts
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 75A, —1.85 2.78 Volts
Tj = 125°C
Diode Forward V oltage VFM IF = 75A, VD = 15V, VCIN = 5V —1.7 2.5 Volts
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C—— 1mA
VCE = VCES, Tj = 125°C——10 mA
Thermal Characteristics
Characteristic Symbol Condition Min. T yp. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT ——0.21 °C/Watt
Rth(j-c)F Each Inverter FWDi ——0.35 °C/Watt
Rth(j-c)Q Brake IGBT ——0.33 °C/Watt
Rth(j-c)F Brake FWDi ——0.80 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, ——0.018 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply V oltage VCC Applied across P-N Terminals 0 ~ 400 Volts
VDApplied between VUP1-VUPC, 15 ± 1. 5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VDVolts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tDEAD Input Signal ≥ 2.5 µs
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
0
1
2
3
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
0 100 300200
V
D
= 15V
T
j
= 25
o
C
T
j
= 125
o
C
V
CIN
= 0V
0
1
2
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
20
3
02218161412
I
C
= 200A
T
j
= 25
o
C
T
j
= 125
o
C
V
CIN
= 0V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
012
03
100
200
300
T
j
= 25
o
C
V
CIN
= 0V
V
D
= 17V
15 13
101102103
10-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
on
100
101
t
off
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
101102103
10-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
c(on)
100
101
t
c(off)
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
101102103
10-2
COLLECTOR REVERSE CURRENT, –I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10-1
100
V
CC
= 300V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
100
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
101
102
I
rr
t
rr
0.4 1.2 2.4
101
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR REVERSE CURRENT, –I
C
, (AMPERES)
DIODE FORWARD CHARACTERISTICS
102
103
0.8 1.6 2.0
T
j
= 25
o
C
T
j
= 125
o
C
V
D
= 15V
V
CIN
= 15V
10
20
60
100
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
12014161820
T
j
= 25
o
C
0
120
40
80
0
40
60
120
OVER CURRENT TRIP LEVEL
TEMPERATURE DEPENDENCY (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (oC)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 50 100 150-50
V
D
= 15V
100
80
Inverter Part
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T -BASE TYPE
INSULATED P ACKAGE
0
40
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
j
, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
-50 0 50 100 150
V
D
= 15V
11
12
13
14
15
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, T
j
, (oC)
UV TRIP-RESET LEVEL,
UV
t
, UV
r
, (VOLTS)
-50 150050100
UV
t
UV
r
0
TIME, (s)
TRANSIENT IMPEDANCE, Z
th(j-c)
, (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)Q
= 0.21
o
C/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Z
th(j-c)
, (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = R
th(j-c)F
= 0.35
o
C/W
10-2
10-3
Inverter Part
Mar.2002
MITSUBISHI INTELLIGENT POWER MODULES
PM200RSA060
FLA T-BASE TYPE
INSULATED PACKAGE
Brake Part
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.33oC/W
10-2
10-3
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.8oC/W
10-2
10-3
0 0.4 0.8
100
101
102
DIODE FORWARD VOLTAGE, VF, (VOLTS)
DIODE FORWARD CURRENT, IF, (AMPERES)
1.2 2.0 1.6
VD = 15V
Tj
= 25oC
Tj = 125oC
DIODE FORWARD CHARACTERISTICS
0
1.0
2.0
3.0
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, VD, (VOLTS)
01214161820
0.5
1.5
2.5
Tj = 25oC
VCIN = 0V
COLLECTOR-EMITTER SATURATION VOLTAGE
VCE(sat), (VOLTS)
0
1.0
2.0
3.0
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, IC, (AMPERES)
SATURATION VOLTAGE VCE(sat), (VOLTS)
0 10060
0.5
2.5
1.5
20 40 80
VD = 15V
VCIN = 0V
Tj = 25oC
Tj
= 125oC
012
0
20
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
3
40
60
100
80
4
Tj = 25oC
VCIN = 0V
VD = 17V
15
13
