TSOP344..SI1F
Document Number 84701
Rev. 1.1, 22-Feb-05
Vishay Semiconductors
www.vishay.com
1
16657
12
3
IR Receiver Modules for Remote Control Systems
Description
The TSOP344..SI1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP344..SI1F is a
standard IR remote control receiver series for 3 V
supply voltage with excellent suppression of distur-
bance signals.
Features
• Photo detector and preamplifier in
one package
• Internal filter for PCM frequency
• Improved shielding against electrical
field disturbance
• TTL and CMOS compatibility
• Output active low
• Supply voltage range: 2.7 V to 5.5 V
• Improved immunity against ambient light
• Enhanced suppression of disturbance signals by
special filtering
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = VS
Parts Table
Part Carrier Frequency
TSOP34430SI1F 30 kHz
TSOP34433SI1F 33 kHz
TSOP34436SI1F 36 kHz
TSOP34437SI1F 36.7 kHz
TSOP34438SI1F 38 kHz
TSOP34440SI1F 40 kHz
TSOP34456SI1F 56 kHz
Block Diagram Application Circuit
30 kΩ
2
3
1
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
16833
C1=
4.7µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100 Ω
+V
S
GND
Transmitter
with
TSALxxxx V
S
R
1
+C
1
recommended to suppress power supply
disturbances.
V
O
The output voltageshould not behold continuouslyat
avoltagebelowV
O=
2.0Vby theexternal circuit.
17170
e3
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Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 3) VS- 0.3 to + 6.0 V
Supply Current (Pin 3) IS3mA
Output Voltage (Pin 1) VO- 0.3 to VS + 0.3 V V
Output Current (Pin 1) IO10 mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW
Soldering Temperature t ≤ 10 s, 1mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 3) Ev = 0, VS = 3 V ISD 0.7 1.2 1.5 mA
Ev = 40 klx, sunlight ISH 1.3 mA
Supply Voltage VS2.7 5.5 V
Transmission Distance Ev = 0, test signal see fig.1,
IR diode TSAL6200,
IF = 250 mA
d35m
Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2,
test signal see fig. 1
VOSL 250 mV
Minimum Irradiance
(30 - 40 kHz)
VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.2 0.4 mW/m2
Minimum Irradiance (56 kHz) VS = 3 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.3 0.5 mW/m2
Minimum Irradiance
(30 - 40 kHz)
VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.35 0.5 mW/m2
Minimum Irradiance (56 kHz) VS = 5 V
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Ee min 0.45 0.6 mW/m2
Maximum Irradiance tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig. 1
Ee max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ± 45 deg
TSOP344..SI1F
Document Number 84701
Rev. 1.1, 22-Feb-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*
t
* t
pi
w10/fo is recommended for optimal function
V
O
V
OH
V
OL
t
16110
Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
Output Signal
t
d1)
t
po2)
1)
7/f
0
<t
d
<15/f
0
2)
t
pi
–5/f
0
<t
po
< t
pi
+6/f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.11.010.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16908
Input Burst Duration
l= 950 nm,
optical test signal, fig.1
Output Pulse
t – Output Pulse Width ( ms )
po
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.11.010.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16909
To ff
l= 950 nm,
optical test signal, fig.3
To n
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.70.9 1.11.3
f/f
0
– Relative Frequency
16925
f = f
0
"5%
Df ( 3dB ) = f
0
/10
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient,l = 950 nm
E – Threshold Irradiance ( mW/m )
e min
2
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Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.11.010.0 100.0 1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E – Threshold Irradiance ( mW/m )
e min 2
f = 1 kHz
f = 100 Hz
E – Threshold Irradiance ( mW/m )
0.00.4 0.81.21.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min 2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
10 30 50 70 90 110
Burst Length ( number of cycles / burst )
16917
f = 38 kHz, E
e
= 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Sensitivity vs. Supply Voltage
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–30 –15 0 15 30 45607590
T
amb
– Ambient Temperature ( qC )
16918
Sensitivity in dark ambient
E – Threshold Irradiance ( mW/m )
e min
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
750 850 950 1050 1150
18998
λ-Wavelength(nm )
S() -Relative Spectral Sensitivityλ
rel
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2.02.53.03.54.04.55.05.56.0
V
S
– Supply Voltage ( V )
17185
E – Sensitivity ( mW/m )
2
e min
TSOP344..SI1F
Document Number 84701
Rev. 1.1, 22-Feb-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP344..SI1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 10 cycles/burst or longer.
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary.
• For each burst which is longer than 0.9 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst.
• Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP344..SI1F it can still receive the data signal.
However the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP344..SI1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 14 or Figure 15).
Figure 13. Directivity
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0q
30q
10q20q
40q
50q
60q
70q
80q
1.0
0.8
0.7
d
rel
– Relative Transmission Distance
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Figure 15. IR Signal from Fluorescent Lamp with high Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
0 5 10 15 20
Time ( ms )
16921
IR Signal
IR Signal from fluorescent
lamp with high modulation
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Document Number 84701
Rev. 1.1, 22-Feb-05
TSOP344..SI1F
Vishay Semiconductors
Package Dimensions in mm
16248
TSOP344..SI1F
Document Number 84701
Rev. 1.1, 22-Feb-05
Vishay Semiconductors
www.vishay.com
7
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of ODSs listed in the following documents.
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respectively
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substances and do not contain such substances.
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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