BC817, BC818
1 Nov-29-2001
NPN Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC807, BC808 (PNP)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
6As
6Bs
6Cs
6Es
6Fs
6Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol BC817 BC818 Unit
Collector-emitter voltage VCEO 45 25 V
Collector-base voltage VCBO 50 30
Emitter-base voltage VEBO 5 5
DC collector current IC500 mA
Peak collector current ICM 1 A
Base current mA100
IB
Peak base current IBM 200
Total power dissipation, TS = 79 °C Ptot 330 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BC817, BC818
2 Nov-29-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC817
BC818
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC817
BC818
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 50 µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE-grp.16
hFE-grp.25
hFE-grp.40
hFE
60
100
170
-
-
-
-
-
-
Collector-emitter saturation voltage1
)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
1) Pulse test: t ≤ 300µs, D = 2%
BC817, BC818
3 Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 170 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 6 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz Ceb - 60 -
BC817, BC818
4 Nov-29-2001
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00218BC 817/818
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00220BC 817/818
-6
0
10
5
D
=
5
101
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
Collector cutoff current ICBO = f (TA)
VCBO = 25V
0
10
EHP00221BC 817/818
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
BC817, BC818
5 Nov-29-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00223BC 817/818
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
˚C
-50
25
˚C
150
˚C
Base-emitter saturation voltage
IC = f(VBEsat), hFE = 10
0
10
EHP00222BC 817/818
BEsat
V
2.0 V 4.0
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
DC current gain hFE = f(IC)
VCE = 1V
10
EHP00224BC 817/818
-1 3
10mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
Ι
2
10
2
10
˚C
100
5
25
˚C
-50
˚C
