MSFC90 Thyristor/Diode Modules VRRM / VDRM IFAV / ITAV 800 to 1600V 90Amp Applications y y y y Circuit Power Converters Lighting Control DC Motor Control and Drives Heat and temperature control Features y y y y y y International standard package High Surge Capability Glass passivated chip Simple Mounting Heat transfer through aluminum oxide DBCceramic isolated metal baseplate UL E243882 approved Module Type TYPE VRRM/VDRM VRSM MSFC90-08 MSFC90-12 MSFC90-16 800V 1200V 1600V 900V 1300V 1700V Diode Maximum Ratings Symbol Item Conditions Values Units 90 A ID Output Current(D.C.) Tc=85 IFSM Surge forward current t=10mS Tvj =45 2000 A a.c.50HZ;r.m.s.;1min 20000 3000 A2s V Operating Junction Temperature -40 to +125 Storage Temperature -40 to +125 2 it Visol Tvj Tstg Mt Circuit Fusing Consideration Isolation Breakdown Voltage(R.M.S) Mounting Torque Ms Weight 315% To heatsink(M6) 515% Nm 100 g Values Units ModuleApproximately Thermal Characteristics Symbol Item Rth(j-c) Thermal Impedance, max. Rth(c-s) To terminals(M5) Nm Thermal Impedance, max. Conditions Junction to Case 0.14 /W Case to Heatsink 0.10 /W Electrical Characteristics Symbol Item VFM Forward Voltage Drop, max. IRRM Repetitive Peak Reverse Current, max. MSFC90 - Rev 0 Oct, 2011 Conditions T=25 IF =300A Tvj =25 VRD=VRRM Tvj =125 VRD=VRRM Values Min. Typ. 0.5 6 Max. 1.65 Units V mA mA www.microsemi.com 1/4 MSFC90 Thyristor Maximum Ratings Symbol Item Conditions Values Units 90 A TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 2000 1750 A Circuit Fusing Consideration TVJ =45 t=10ms, sine TVJ =125 t=10ms, sine 20000 15000 A2s Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min 3000 V -40 to +130 -40 to +125 315% 515% Nm Nm ITAV Average On-State Current Sine 180o;Tc=85 ITSM Surge On-State Current i2t Visol Tvj Tstg Mt Ms Operating Junction Temperature Storage Temperature Mounting Torque To terminals(M5) To heatsink(M6) di/dt Critical Rate of Rise of On-State Current TVJ= TVJM , 2/3VDRM ,IG =500mA Tr<0.5us,tp>6us 150 A/us dv/dt Critical Rate of Rise of Off-State Voltage, min. TJ=TVJM ,2/3VDRM linear voltage rise 1000 V/us a Maximum allowable acceleration 50 m/s2 Values Units Thermal Characteristics Symbol Item Thermal Impedance, max. Rth(j-c) Rth(c-s) Thermal Impedance, max. Conditions Junction to Case 0.28 /W Case to Heatsink 0.20 /W Electrical Characteristics Symbol Item VTM Peak On-State Voltage, max. Repetitive Peak Reverse Current, max. / Repetitive Peak Off-State Current, max. IRRM/IDRM VTO rT Conditions Values Min. Typ. Max. Units 1.65 V TVJ=TVJM ,VR=VRRM ,VD= VDRM 20 mA On state threshold voltage For power-loss calculations only (TVJ =125) 0.9 V Value of on-state slope resistance. max TVJ =TVJM 2 m T=25 IT =300A VGT Gate Trigger Voltage, max. TVJ =25 , VD =6V 3 V IGT Gate Trigger Current, max. TVJ =25 , VD =6V 150 mA VGD Non-triggering gate voltage, max. TVJ=125,VD =2/3VDRM 0.25 V IGD Non-triggering gate current, max. TVJ =125, VD =2/3VDRM 6 mA IL Latching current, max. TVJ =25 , RG = 33 300 600 mA IH Holding current, max. TVJ =25 , VD =6V 150 250 mA tgd Gate controlled delay time TVJ=25, IG=1A, diG/dt=1A/us tq Circuit commutated turn-off time TVJ =TVJM MSFC90 - Rev 0 Oct, 2011 1 us 100 us www.microsemi.com 2/4 MSFC90 Performance Curves 200 140 rec.120 125 W sin.180 A 160 DC DC rec.60 100 rec.30 120 75 sin.180 80 50 rec.120 rec.60 rec.30 40 25 PTAV 0 ITAVM 0 ITAV 20 40 60 80 100 A 120 0 0 Tc Fig1. Power dissipation 100 2000 Zth(j-S) / W Zth(j-C) 0.25 0.001 t 0.01 0.1 1 10 S 100 50HZ A 1000 0 Fig3. Transient thermal impedance 10 100 ms 1000 Fig4. Max Non-Repetitive Forward Surge Current 300 A 130 Fig2.Forward Current Derating Curve 0.50 0 50 Typ. 200 max. 100 25 - - -125 IT 0 0 VTM 0.5 1.0 1.5 V 2.0 Fig5. Forward Characteristics MSFC90 - Rev 0 Oct, 2011 www.microsemi.com 3/4 MSFC90 100 1/2*MSFC90 V 20V;20 10 VGT 1 PG(tp) -40 Tvj 25 125 VG IGT VGD125 IGD125 0.1 0.001 IG 0.01 0.1 1 10 A 100 Fig6. Gate trigger Characteristics Package Outline Information CASE: F1 x Dimensions in mm MSFC90 - Rev 0 Oct, 2011 www.microsemi.com 4/4