Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 1 of 7 May 2012
AH312
2 Watt, High Linearity InGaP HBT Amplifier
Product Features
400 – 2300 MHz
+33 dBm P1dB
+51 dBm Output IP3
18 dB Gain @ 900 MHz
+5V Single Positive Supply
MTTF > 100 Years
Lead-free/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
Final stage amplifiers for Repeaters
Mobile Infrastructure
Product Description
The AH312 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +49 dBm OIP3 and
+33 dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are
100% RF and DC tested.
The AH312 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH312 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
Function
Pin No.
Vref
1
Input
3
Output
6, 7
Vbias
8
GND
Backside Paddle
N/C or GND
2, 4, 5
Specifications (1)
Parameter
Units
Min
Typ
Max
MHz
400
2300
MHz
2140
dB
9
10
dB
20
dB
6.8
dBm
+32
+33.2
dBm
+47
+48
dBm
+25.3
dB
7.7
mA
700
800
900
V
+5
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15. (ie. total device current
typically will be 822 mA.)
Absolute Maximum Rating
Parameter
Rating
Thermal Resistance, Rth
17.5C/W
Storage Temperature
-65 to +150 C
RF Input Power (continuous)
+28 dBm
Device Voltage
+8 V
Device Current
1400 mA
Device Power
8 W
Junction Temperature
+200 C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter
Units
Typical
Frequency
MHz
900
1960
2140
S21 – Gain
dB
18
11
10
S11 – Input R.L.
dB
-18
-19
-20
S22 – Output R.L.
dB
-11
-6.8
-6.8
Output P1dB
dBm
+33
+33.4
+33.2
Output IP3
dBm
+49
+51
+48
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+27
+27.5
wCDMA Channel Power
@ -45 dBc ACLR
dBm
+25.3
Noise Figure
dB
8.0
7.3
7.7
Device Bias (3)
+5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 C.
Ordering Information
Part No.
Description
AH312-S8G
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
8
7
6
5
Not Recommended for
New Designs
Recommended Replacement
Part: TQP7M9104
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 7 May 2012
AH312
2 Watt, High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, calibrated to device leads)
0 0.5 1 1.5 2 2.5
Frequency (GHz)
Gain / Maximum Stable Gain
-10
-5
0
5
10
15
20
25
30
35
40
Gain (dB)
DB(|S[2,1]|) DB(GMax)
0
1.0 1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S11 Swp Max
3GHz
Swp Min
0.05GHz
S[1,1] *
S[1,1]
0
1.0 1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
S22 Swp Max
3GHz
Swp Min
0.05GHz
S[2,2] *
S[2,2]
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-0.86
-178.06
27.55
113.72
-45.75
30.91
-0.38
-130.98
100
-0.64
178.18
22.16
98.81
-45.46
12.80
-0.38
-157.30
200
-0.68
172.85
16.13
89.06
-42.65
6.09
-0.48
-172.51
400
-0.76
164.33
10.61
77.31
-43.96
4.69
-0.48
177.51
600
-0.93
155.56
7.46
67.94
-41.17
6.70
-0.61
173.63
800
-1.15
146.04
5.78
57.62
-41.65
-5.78
-0.66
170.49
1000
-1.50
134.58
4.87
46.90
-40.36
-7.84
-0.71
169.31
1200
-2.39
121.66
4.74
32.96
-40.22
-16.51
-0.80
168.22
1400
-4.47
104.01
5.33
14.01
-38.97
-48.82
-0.76
167.91
1600
-11.96
86.06
5.96
-17.55
-38.96
-86.32
-0.60
170.63
1800
-8.66
-179.11
4.41
-56.78
-39.35
-144.53
-0.52
167.41
2000
-2.76
159.91
0.53
-89.86
-43.55
145.94
-0.41
164.50
2200
-1.21
142.90
-3.21
-107.99
-41.56
104.25
-0.54
160.11
2400
-0.68
130.93
-7.27
-123.14
-42.46
73.64
-0.68
157.84
2600
-0.43
121.91
-10.41
-134.93
-39.71
64.28
-0.73
154.66
2800
-0.32
114.61
-13.28
-143.22
-40.99
58.20
-0.73
151.14
3000
-0.29
108.16
-15.94
-149.93
-39.65
48.40
-0.79
147.52
Device S-parameters are available for download off of the website at: www.TriQuint.com
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers „A‟, „B‟, „C‟, etc. and „1‟, „2‟, „3‟, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc Phone 1-503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 7 May 2012
AH312
2 Watt, High Linearity InGaP HBT Amplifier
900 MHz Application Circuit (AH312-S8PCB900)
Typical RF Performance at 25 C
Frequency
900 MHz
S21 – Gain
18 dB
S11 – Input Return Loss
-18 dB
S22 – Output Return Loss
-11 dB
Output P1dB
+33 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing)
+49 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+27 dBm
Noise Figure
8.0 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15
16
17
18
19
20
840 860 880 900 920 940
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
840 860 880 900 920 940
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
840 860 880 900 920 940
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 880 MHz
26
28
30
32
34
36
840 860 880 900 920 940
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz
-70
-60
-50
-40
22 23 24 25 26 27 28 29
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
840 860 880 900 920 940
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 900 MHz, 901 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 900 MHz, 901 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22 24 26
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice.
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AH312
2 Watt, High Linearity InGaP HBT Amplifier
1960 MHz Application Circuit (AH312-S8PCB1960)
Typical RF Performance at 25 C
Frequency
1960 MHz
S21 – Gain
11 dB
S11 – Input Return Loss
-20 dB
S22 – Output Return Loss
-6.8 dB
Output P1dB
+33.4 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing)
+51 dBm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
+27.5 dBm
Noise Figure
7.3 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
8
9
10
11
12
13
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 1960 MHz
26
28
30
32
34
36
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz
-75
-65
-55
-45
-35
22 23 24 25 26 27 28 29
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
1930 1940 1950 1960 1970 1980 1990
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 1960 MHz, 1961 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 1960 MHz, 1961 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice.
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AH312
2 Watt, High Linearity InGaP HBT Amplifier
2140 MHz Application Circuit (AH312-S8PCB2140)
Typical RF Performance at 25 C
Frequency
2140 MHz
S21 – Gain
10 dB
S11 – Input Return Loss
-20 dB
S22 – Output Return Loss
-6.8 dB
Output P1dB
+33.2 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing)
+48 dBm
wCDMA Channel Power
(@-45 dBc ACLR, 3GPP, TM 1+64 DPCH)
+25.3 dBm
Noise Figure
7.7 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
7
8
9
10
11
12
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S21 (dB)
+25°C -40°C +85°C
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S11 (dB)
+25°C -40°C +85°C
S22 vs. Frequency
-20
-15
-10
-5
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 (dB)
+25°C -40°C +85°C
Noise Figure vs. Frequency
0
2
4
6
8
10
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NF (dB)
-40°C +25°C +85°C
P1dB vs. Frequency
Circuit boards are optimized at 2140 MHz
26
28
30
32
34
36
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dB (dBm)
-40°C +25°C +85°C
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz
-60
-55
-50
-45
-40
-35
22 23 24 25 26 27
Output Channel Power (dBm)
ACPR (dBc)
-40 C +25 C +85 C
OIP3 vs. Frequency
+25° C, +17 dBm/tone
35
40
45
50
55
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 (dBm)
OIP3 vs. Temperature
freq. = 2140 MHz, 2141 MHz, +17 dBm/tone
35
40
45
50
55
-40 -15 10 35 60 85
Temperature (°C)
OIP3 (dBm)
OIP3 vs. Output Power
freq. = 2140 MHz, 2141 MHz, +25° C
35
40
45
50
55
12 14 16 18 20 22
Output Power (dBm)
OIP3 (dBm)
Specifications and information are subject to change without notice.
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AH312
2 Watt, High Linearity InGaP HBT Amplifier
Application Note: Reduced Bias Configurations
The AH312 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1. The
recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation.
Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the
ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH312
measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency
applications will produce similar performance results.
AH312-S8PCB2140 Performance Data
R1
(ohms)
Icq
(mA)
Pdiss
(W)
P1dB
(dBm)
OIP3
(dBm)
15
800
4.0
+33.3
+51.4
22
700
3.5
+33.3
+50.9
43
600
3.0
+33.1
+50.9
62
500
2.5
+33.0
+50.7
110
400
2.0
+32.9
+47.3
2.14GHz Gain vs. Output Power
8.2
8.6
9
9.4
9.8
10.2
18 20 22 24 26 28 30 32 34
Output Power (dBm)
Gain (dB)
Idq=800mA 'Class A'
Idq=700mA
Idq=600mA
Idq=500mA
Idq=400mA
2.14GHz OIP3 vs. Output Power per Tone
35
40
45
50
55
10 12 14 16 18 20 22 24
Power Out per Tone (dBm)
OIP3 (dBm)
Idq=800mA 'Class A'
Idq=700mA
Idq=600mA
Idq=500mA
Idq=400mA
W-CDMA ACLR vs. Output Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-65
-60
-55
-50
-45
-40
-35
14 16 18 20 22 24 26
W-CDMA Channel Power Out (dBm)
ACLR (dBc)
Idq=800mA 'Class A'
Idq=700mA
Idq=600mA
Idq=500mA
Idq=400mA
CW PAE vs. Output Power
1
10
100
18 20 22 24 26 28 30 32
CW Tone Power Out (dBm)
PAE (%)
Idq=800mA 'Class A'
Idq=700mA
Idq=600mA
Idq=500mA
Idq=400mA
Specifications and information are subject to change without notice.
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AH312
2 Watt, High Linearity InGaP HBT Amplifier
AH312-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum
260C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes.
Outline Drawing
Mounting Configuration / Land Pattern
Product Marking
The component will be marked with an
“AH312G” designator with an alphanumeric lot
code on the top surface of the package.
ESD / MSL Information
ESD Rating: Class 1B
Value: Passes between 500 and 1000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260 C convection reflows
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. A heatsink underneath the area of the PCB for the mounted device
is strictly required for proper thermal operation. Damage to the
device can occur without the use of one.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
3. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
4. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
5. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
6. RF trace width depends upon the PC board material and
construction.
7. Use 1 oz. Copper minimum.
8. All dimensions are in millimeters (inches). Angles are in degrees.