Single Phase Rectifier Bridges PSB 51 IdAVM = 55 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSB 51/08 PSB 51/12 PSB 51/14 PSB 51/16 PSB 51/18 Symbol Test Conditions IdAVM IFSM T C = 100C, module i2 dt T VJ T VJM T stg VISOL Md W eight Maximum Ratings 55 A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 825 A A T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 675 750 A A T VJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2820 2840 A2 s A2 s T VJ = T VJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2280 2340 A2 s A2 s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 2-2.5 110 Nm g 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Mounting torque typ. (M5) Features * Package with fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions IR VR = VRRM VR = VRRM T VJ = 25C T VJ = T VJM 0.2 4 mA mA VF VTO rT RthJC IF = 150 A T VJ = 25C 1.58 V 0.8 6 V m per Diode; DC current per module 1.3 0.325 K/W K/W RthJK per Diode; DC current per module 1.6 0.4 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 21 12.4 50 mm mm m/s2 For power-loss calculations only T VJ = T VJM POWERSEM GmbH, Walpersdorfer Str. 53 91126 D- Schwabach, Germany Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 Characteristic Value POWERSEM reserves the right to change limits, test conditions and dimensions www.powersem.net PSB 51 200 IF(OV) -----IFSM IFSM (A) TVJ=45C TVJ=150C [A] 1.6 150 4 10 2 As 750 675 TVJ=45C 1.4 1.2 100 10 3 TVJ=150C 1 0 VRRM 50 0.8 Tvj = 150C I F 1/2 VRRM Tvj = 25C 1 VRRM 0.6 10 0 0.5 1 1.5 VF [V] 0.4 2 0 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 1 10 10 2 2 1 2 3 t[ms] 10 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 4 t [ms] 10 Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) 85 TC PSB 51 0.3 0.17 = RTHCA [K/W] 0.42 90 60 95 [A] 50 100 150 DC sin.180 rec.120 rec.60 rec.30 105 125 0.67 110 40 115 100 120 1.17 75 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 6 125 130 135 2.67 30 0 50 [A] 10 IdAV 145 0 C Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature K/W 2 Z thJK Z thJC 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or Thyristor), calculated 20 140 150 10 IFAVM 30 50 100 TC(C) 150 200 Fig.5 Maximum forward current at case temperature