TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com - High Reliability controlled devices - Unidirectional (A) and Bidirectional (CA) construction - Available in both J-bend and Gull-wing terminations - Selections for 5.0 to 170 V standoff voltages (VWM) SURFACE MOUNT 600 W Transient Voltage Suppressor DEVICES MSMBJ5.0A thru MSMBJ170CA, e3 and MSMBG5.0A thru MSMBG170CA, e3 LEVELS M, MA, MX, MXL FEATURES High reliability controlled devices with wafer fabrication and assembly lot traceability 100 % surge tested devices Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options. Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to MP6KE200CA Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B RoHS compliant devices available by adding an "e3" suffix 3 lot norm screening performed on Standby Current ID Refer to table below for dimensions APPLICATIONS / BENEFITS Protects sensitive components such as IC's, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc. Protection from switching transients & induced RF Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4 Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance: o Class 1: MSMB5.0A to MSMB120CA o Class 2: MSMB5.0A to MSMB60CA o Class 3: MSMB5.0A to MSMB30CA o Class 4: MSMB5.0A to MSMB15CA Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance: o Class 1: MSMB5.0A to MSMB36CA o Class 2: MSMB5.0A to MSMB18CA MAXIMUM RATINGS Peak Pulse Power dissipation at 25 C: 600 watts at 10/1000 s (also see Figures 1, 2, and 3) with impulse repetition rate (duty factor) of 0.01 % or less tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional Operating and Storage temperature: -65 C to +150 C Thermal resistance: 25 C/W junction to lead, or 90 C/W junction to ambient when mounted on FR4 PC board (1oz Cu) with recommended footprint (see page 2) Steady-State Power dissipation: 5 watts at TL = 25 C, or 1.38 watts at TA = 25 C when mounted on FR4 PC board with recommended footprint (see page 2) Forward Surge at 25 C: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only) Solder temperatures: 260 C for 10 s (maximum) RF01000 Rev B, Sept 2011 High Reliability Product Group Page 1 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ MECHANICAL AND PACKAGING Void-free transfer molded thermosetting epoxy body meeting UL94V-0 Gull-wing or J-bend tin-lead (90 % Sn, 10 % Pb) or RoHS (100 % Sn) compliant annealed matte-tin plating solderable per MIL-STD-750, method 2026 Cathode indicated by band (No cathode band on bi-directional devices) Part number marked on package Available in bulk or custom tape-and-reel packaging TAPE-AND-REEL option available with up to 750 devices on 7 inch reel or up to 2500 devices on 13 inch reel per EIA-481-1-A with 12 mm tape. Add "TR" suffix to part number. Weight: 0.1 gram (approximately) PACKAGE DIMENSIONS SMBJ (DO-214AA) MIN MAX A .077 .083 B .160 .180 DIMENSIONS IN INCHES C D E F .130 .205 .077 .235 .155 .220 .104 .255 K .015 .030 L .030 .060 MIN MAX 1.95 2.10 DIMENSIONS IN MILLIMETERS 4.06 3.30 5.21 1.95 5.97 4.57 3.94 5.59 2.65 6.48 .381 .762 .760 1.520 SMBG (DO-215AA) PAD LAYOUT SMBJ (DO-214AA) A B C INCHES .260 .085 .110 mm 6.60 2.16 2.79 SMBG (DO-215AA) A B C INCHES .320 .085 .110 mm 8.13 2.16 2.79 SYMBOLS & DEFINITIONS Symbol VWM PPP VBR ID Definition Symbol Working Peak (Standoff) Voltage Peak Pulse Power Breakdown Voltage Standby Current RF01000 Rev B, Sept 2011 IPP VC IBR Definition Peak Pulse Current Clamping Voltage Breakdown Current for VBR High Reliability Product Group Page 2 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ ELECTRICAL CHARACTERISTICS @ 25oC MICROSEMI PART NUMBER GULL-WING MSMBG5.0A MSMBG6.0A MSMBG6.5A MSMBG7.0A MSMBG7.5A MSMBG8.0A MSMBG8.5A MSMBG9.0A MSMBG10A MSMBG11A MSMBG12A MSMBG13A MSMBG14A MSMBG15A MSMBG16A MSMBG17A MSMBG18A MSMBG20A MSMBG22A MSMBG24A MSMBG26A MSMBG28A MSMBG30A MSMBG33A MSMBG36A MSMBG40A MSMBG43A MSMBG45A MSMBG48A MSMBG51A MSMBG54A MSMBG58A MSMBG60A MSMBG64A MSMBG70A MSMBG75A MSMBG78A MSMBG85A MSMBG90A MSMBG100A MSMBG110A MSMBG120A MSMBG130A MSMBG150A MSMBG160A MSMBG170A NOTE 1: NOTE 2: J-BEND MSMBJ5.0A MSMBJ6.0A MSMBJ6.5A MSMBJ7.0A MSMBJ7.5A MSMBJ8.0A MSMBJ8.5A MSMBJ9.0A MSMBJ10A MSMBJ11A MSMBJ12A MSMBJ13A MSMBJ14A MSMBJ15A MSMBJ16A MSMBJ17A MSMBJ18A MSMBJ20A MSMBJ22A MSMBJ24A MSMBJ26A MSMBJ28A MSMBJ30A MSMBJ33A MSMBJ36A MSMBJ40A MSMBJ43A MSMBJ45A MSMBJ48A MSMBJ51A MSMBJ54A MSMBJ58A MSMBJ60A MSMBJ64A MSMBJ70A MSMBJ75A MSMBJ78A MSMBJ85A MSMBJ90A MSMBJ100A MSMBJ110A MSMBJ120A MSMBJ130A MSMBJ150A MSMBJ160A MSMBJ170A REVERSE STAND-OFF VOLTAGE VWM V 5 6 6.5 7 7.5 8 8.5 9 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170 BREAKDOWN VOLTAGE VBR @ IBR V 6.40 - 7.00 6.67 - 7.37 7.22 - 7.98 7.78 - 8.60 8.33 - 9.21 8.89 - 9.83 9.44 - 10.4 10.0 - 11.1 11.1 - 12.3 12.2 - 13.5 13.3 - 14.7 14.4 - 15.9 15.6 - 17.2 16.7 - 18.5 17.8 - 19.7 18.9 - 20.9 20.0 - 22.1 22.2 - 24.5 24.4 - 26.9 26.7 - 29.5 28.9 - 31.9 31.1 - 34.4 33.3 - 36.8 36.7 - 40.6 40.0 - 44.2 44.4 - 49.1 47.8 - 52.8 50.0 - 55.3 53.3 - 58.9 56.7 - 62.7 60.0 - 66.3 64.4 - 71.2 66.7 - 73.7 71.1 - 78.6 77.8 - 86.0 83.3 - 92.1 86.7 - 95.8 94.4 - 104 100 - 111 111 - 123 122 - 135 133 - 147 144 - 159 167 - 185 178 - 197 189 - 209 MAXIMUM CLAMPING VOLTAGE VC @ IPP PEAK PULSE CURRENT (see Fig. 2) IPP MAXIMUM STANDBY CURRENT ID @ VWM V 9.2 10.3 11.2 12 12.9 13.6 14.4 15.4 17 18.2 19.9 21.5 23.2 24.4 26 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275 A 65.2 58.3 53.6 50 46.5 44.1 41.7 39 35.3 33 30.2 27.9 25.8 24 23.1 21.7 20.5 18.5 16.9 15.4 14.2 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.7 7.3 6.9 6.4 6.2 5.8 5.3 4.9 4.7 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2 A 800 800 500 200 100 50 10 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 mA 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 For Bidirectional device types indicate CA suffix after the part number. (i.e. MSMBJ170CA). Bidirectional capacitance is half that shown in figure 4 at zero volts. Microsemi Corp's MSMB series (600 W) surface mountable packages are designed specifically for transient voltage suppression. The wide leads assure a large surface contact for good heat dissipation, and a low resistance path for surge current flow to ground. These high speed transient voltage suppressors can be used to effectively protect sensitive components such as integrated circuits and MOS devices RF01000 Rev B, Sept 2011 High Reliability Product Group Page 3 of 4 TECHNICAL DATA SHEET Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803 Website: http://www.microsemi.com ___________________________________________________________________________________________________________________________________ GRAPHS 50 30 TC = 25 C 10 2.0 1.0 0.5 0.3 0.2 0.1 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000 10,000 tw - Pulse Width - s Test waveform parameters: tr=10 s, tw=1000 s FIGURE 1 Peak Pulse Power vs. Pulse Time FIGURE 2 Pulse Waveform for Exponential Surge C - Capacitance - Picofarads Peak Pulse Power (PPP) or continuous Power in Percent of 25C Rating PPP - Peak Pulse Power - kW 20 TL Lead Temperature C FIGURE 3 Derating Curve RF01000 Rev B, Sept 2011 VBR Breakdown Voltage - Volts FIGURE 4 Typical Capacitance vs Breakdown Voltage High Reliability Product Group Page 4 of 4