NVMFS5C404NL Power MOSFET 40 V, 0.67 mW, 370 A, Single N-Channel Features * * * * * * Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C404NLWF - Wettable Flank Option for Enhanced Optical Inspection AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 0.67 mW @ 10 V 40 V Symbol Value Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGS 20 V ID 370 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100C TC = 25C TC = 100C TA = 25C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current Steady State ID Operating Junction and Storage Temperature Source Current (Body Diode) G (4) S (1,2,3) N-CHANNEL MOSFET A 52 MARKING DIAGRAM 37 PD TA = 100C TA = 25C, tp = 10 ms W 200 100 TA = 100C TA = 25C D (5) 260 PD 370 A 1.0 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter ID MAX W 3.9 1 1.9 IDM 900 A TJ, Tstg -55 to + 175 C IS 191 A Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 38 A) EAS 907 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DFN5 (SO-8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 5C404L XXXXXX = (NVMFS5C404NL) or XXXXXX = 404LWF XXXXXX = (NVMFS5C404NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit ORDERING INFORMATION Junction-to-Case - Steady State RqJC 0.75 C/W See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Junction-to-Ambient - Steady State (Note 2) RqJA 39 Parameter 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. (c) Semiconductor Components Industries, LLC, 2016 February, 2019 - Rev. 8 1 Publication Order Number: NVMFS5C404NL/D NVMFS5C404NL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 21.6 VGS = 0 V, VDS = 40 V mV/C TJ = 25 C 10 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 -6.2 VGS = 10 V ID = 50 A 0.52 0.67 VGS = 4.5 V ID = 50 A 0.75 1.0 gFS VDS =15 V, ID = 50 A V mV/C 270 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 12168 VGS = 0 V, f = 1 MHz, VDS = 25 V 4538 pF 79.8 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 20 V; ID = 50 A 81 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 181 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Plateau Voltage VGP 2.7 td(ON) 24 8.5 VGS = 4.5 V, VDS = 20 V; ID = 50 A nC 27.8 23.8 V SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 1.0 W tf 135 ns 87 157 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 50 A TJ = 25C 0.7 TJ = 125C 0.61 tRR ta tb 1.2 V 97.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 46.5 ns 50.9 190 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C404NL TYPICAL CHARACTERISTICS 3.0 V 700 ID, DRAIN CURRENT (A) 240 200 160 2.8 V 120 80 600 500 400 300 40 100 0 0 0 0.5 1.0 2.0 1.5 2.5 3.0 TJ = 125C 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.0015 4.0 0.0010 0.0013 TJ = 25C ID = 50 A 0.0012 VGS = 4.5 V 0.0008 0.0011 0.0010 0.0006 0.0009 0.0008 0.0007 VGS = 10 V 0.0004 0.0006 3 4 5 6 7 8 9 VGS, GATE VOLTAGE (V) 10 TJ = 25C 0.0002 10 50 90 130 170 210 250 290 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1M 2.1 VGS = 10 V ID = 50 A 1.9 TJ = 150C 100k IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE 0.5 TJ = -55C VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.0014 0.0005 0.0004 TJ = 25C 200 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 800 10 V to 3.2 V 280 1.7 1.5 1.3 1.1 0.9 TJ = 125C 10k TJ = 85C 1k 100 0.7 0.5 -50 -25 0 25 50 75 100 125 150 175 10 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C404NL 10 CISS COSS VGS = 0 V TJ = 25C f = 1 MHz CRSS 5 0 15 10 25 20 35 30 40 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 14k 13k 12k 11k 10k 9k 8k 7k 6k 5k 4k 3k 2k 1k 0 30 QT 25 8 20 6 15 4 QGD QGS 2 0 0 10 VDS = 20 V TJ = 25C ID = 50 A 20 40 60 80 100 120 140 5 0 160 180 VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VDS, DRAIN-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 10,000 t, TIME (ns) IS, SOURCE CURRENT (A) 46 VGS = 4.5 V VDD = 20 V ID = 50 A td(off) 1000 tf tr td(on) 100 41 36 31 26 TJ = 125C 21 16 11 TJ = 150C TJ = 25C 6 1000 1 10 1 100 0.3 0.4 0.5 0.6 0.7 TJ = -55C 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 TC = 25C VGS 10 V 0.01 ms 0.1 ms 100 100 IDS (A) 1 ms dc TJ(initial) = 25C IPEAK (A) 10 10 ms TJ(initial) = 100C 10 10 RDS(on) Limit Thermal Limit Package Limit 1 0.1 1 10 1 100 1E-04 1E-03 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E-02 NVMFS5C404NL 100 RqJA(t) (C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% NVMFS5C404NL 650 mm2, 2 oz., Cu Single Layer Pad 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping NVMFS5C404NLT1G 5C404L DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS5C404NLWFT1G 404LWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel NVMFS5C404NLT3G 5C404L DFN5 (Pb-Free) 5000 / Tape & Reel NVMFS5C404NLWFT3G 404LWF DFN5 (Pb-Free, Wettable Flanks) 5000 / Tape & Reel NVMFS5C404NLAFT1G 5C404L DFN5 (Pb-Free) 1500 / Tape & Reel NVMFS5C404NLWFAFT1G 404LWF DFN5 (Pb-Free, Wettable Flanks) 1500 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C404NL PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE N 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A RECOMMENDED SOLDERING FOOTPRINT* 0.10 C SIDE VIEW 0.10 b C A B 0.05 c DETAIL A 2X 0.495 4.560 2X 8X STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.530 e/2 2X e L 1 0.475 4 3.200 4.530 K PIN 5 (EXPOSED PAD) MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ --- 12 _ E2 L1 M 1.330 2X 0.905 1 0.965 G D2 4X 1.000 4X 0.750 BOTTOM VIEW 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 www.onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVMFS5C404NL/D