Self-Protected Low Side Driver with Temperature and Current Limit NCV8402, NCV8402A NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive environments. www.onsemi.com V(BR)DSS (Clamped) RDS(ON) TYP ID MAX 42 V 165 mW @ 10 V 2.0 A* Features * * * * * * * * * * Short-Circuit Protection Thermal Shutdown with Automatic Restart Overvoltage Protection Integrated Clamp for Inductive Switching ESD Protection NCV8402AMNWT1G - Wettable Flanks Product dV/dt Robustness Analog Drive Capability (Logic Level Input) NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant *Max current limit value is dependent on input condition. MARKING DIAGRAMS DRAIN 4 4 1 2 SOT-223 CASE 318E STYLE 3 3 AYW xxxxx G G 1 2 3 SOURCE GATE DRAIN DFN6 CASE 506AX 1 Typical Applications * Switch a Variety of Resistive, Inductive and Capacitive Loads * Can Replace Electromechanical Relays and Discrete Circuits * Automotive / Industrial DFN6 (WF) CASE 506DK xxxxx AYWW G 1 xxxxx AYWW G 1 A = Assembly Location Y = Year W or WW = Work Week xxxxx = V8402 or 8402A G = Pb-Free Package Drain Gate Input 1 Overvoltage Protection (Note: Microdot may be in either location) ESD Protection Temperature Limit DFN6 PACKAGE PIN DESCRIPTION Current Limit G NC NC 1 2 3 Current Sense 7 EPAD Source 6 S 5 S 4 S Pin # Symbol Description 1 2 3 4 5 6 7 G NC NC S* S* S* EPAD Gate Input No Connect No Connect Source Source Source Drain *Pins 4, 5, 6 are internally shorted together. It is recommended to short these pins externally. ORDERING INFORMATION See detailed ordering and shipping information on page 11 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 October, 2019 - Rev. 26 1 Publication Order Number: NCV8402/D NCV8402, NCV8402A MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RG = 1.0 MW) Gate-to-Source Voltage Continuous Drain Current Symbol Value Unit VDSS 42 V VDGR 42 V VGS 14 V ID Internally Limited Total Power Dissipation - SOT-223 Version @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TS = 25C) PD 1.1 1.74 8.9 W Total Power Dissipation - DFN Version @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TS = 25C) PD 0.76 1.78 8.9 W Maximum Continuous Drain Current - SOT-223 Version @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TS = 25C) ID 1.54 1.94 6.75 A Maximum Continuous Drain Current - DFN Version @ TA = 25C (Note 1) @ TA = 25C (Note 2) @ TS = 25C) ID 1.28 1.97 6.75 A SOT223 Junction-to-Ambient Steady State (Note 1) SOT223 Junction-to-Ambient Steady State (Note 2) SOT223 Junction-to-Soldering Point Steady State RqJA RqJA RqJS 114 72 14 C/W DFN Junction-to-Ambient Steady State (Note 1) DFN Junction-to-Ambient Steady State (Note 2) DFN Junction-to-Soldering Point Steady State RqJA RqJA RqJS 163 70 14 Single Pulse Drain-to-Source Avalanche Energy (VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W) EAS 150 mJ Load Dump Voltage VLD 55 V Operating Junction Temperature TJ -40 to 150 C Storage Temperature Tstg -55 to 150 C Thermal Resistance (VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface-mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 thick). 2. Surface-mounted onto 2 sq. FR4 board (1 sq., 1 oz. Cu, 0.06 thick). + ID DRAIN IG + VDS GATE SOURCE VGS - - Figure 1. Voltage and Current Convention www.onsemi.com 2 NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit VGS = 0 V, ID = 10 mA, TJ = 25C V(BR)DSS 42 46 55 V 40 45 55 OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 150C (Note 5) Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25C IDSS 0.25 4.0 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 150C (Note 5) IDSS 1.1 20 mA VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA VGS = VDS, ID = 150 mA VGS(th) 1.8 2.2 V Gate Input Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient VGS = 10 V, ID = 1.7 A, TJ = 25C Static Drain-to-Source On-Resistance 1.3 VGS(th)/TJ 4.0 RDS(on) -mV/C 165 200 VGS = 10 V, ID = 1.7 A, TJ = 150C (Note 5) 305 400 VGS = 5.0 V, ID = 1.7 A, TJ = 25C 195 230 VGS = 5.0 V, ID = 1.7 A, TJ = 150C (Note 5) 360 460 VGS = 5.0 V, ID = 0.5 A, TJ = 25C 190 230 VGS = 5.0 V, ID = 0.5 A, TJ = 150C (Note 5) 350 460 Source-Drain Forward On Voltage VGS = 0 V, IS = 7.0 A mW VSD 1.0 V ton 25 30 ms Turn-Off Time (90% VIN to 10% ID) toff 120 200 ms Turn-On Rise Time (10% ID to 90% ID) trise 20 25 ms SWITCHING CHARACTERISTICS (Note 5) Turn-On Time (10% VIN to 90% ID) VGS = 10 V, VDD = 12 V, ID = 2.5 A, RL = 4.7 W Turn-Off Fall Time (90% ID to 10% ID) tfall 50 70 ms Slew-Rate ON (70% to 50% VDD) -dVDS/dtON 0.8 1.2 V/ms Slew-Rate OFF (50% to 70% VDD) dVDS/dtOFF 0.3 0.5 V/ms A SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25C ILIM 3.7 4.3 5.0 VDS = 10 V, VGS = 5.0 V, TJ = 150C (Note 5) 2.3 3.0 3.7 VDS = 10 V, VGS = 10 V, TJ = 25C 4.2 4.8 5.4 VDS = 10 V, VGS = 10 V, TJ = 150C (Note 5) 2.7 3.6 4.5 150 175 200 Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis VGS = 5.0 V (Note 5) TLIM(off) VGS = 5.0 V DTLIM(on) VGS = 10 V (Note 5) TLIM(off) VGS = 10 V DTLIM(on) VGS = 5 V ID = 1.0 A IGON C 15 150 165 185 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 10 V ID = 1.0 A Current Limit Gate Input Current VGS = 5 V, VDS = 10 V VGS = 10 V, VDS = 10 V 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. www.onsemi.com 3 50 mA 400 IGCL 0.05 0.4 mA NCV8402, NCV8402A ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Test Condition Symbol VGS = 5 V, VDS = 10 V IGTL Min Typ Max Unit GATE INPUT CHARACTERISTICS (Note 5) Thermal Limit Fault Gate Input Current 0.15 VGS = 10 V, VDS = 10 V mA 0.7 ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 V 400 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 4 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 10 Emax (mJ) IL(max) (A) 1000 TJstart = 25C 100 TJstart = 25C TJstart = 150C TJstart = 150C 1 10 10 10 100 L (mH) Figure 2. Single Pulse Maximum Switch-off Current vs. Load Inductance 100 L (mH) Figure 3. Single Pulse Maximum Switching Energy vs. Load Inductance 1000 10 1 0.1 Emax (mJ) IL(max) (A) TJstart = 25C TJstart = 150C 1 100 TJstart = 150C 10 10 TIME IN CLAMP (ms) TJstart = 25C 1 Figure 4. Single Pulse Maximum Inductive Switch-off Current vs. Time in Clamp 8 8V TA = 25C 7 8 -40C 6 5V 4V 25C ID (A) 5 3.5 V 4 3 100C 4 3 2 3V 2 1 VGS = 2.5 V 1 0 VDS = 10 V 7 6V 5 ID (A) Figure 5. Single Pulse Maximum Inductive Switching Energy vs. Time in Clamp 10 V 6 10 TIME IN CLAMP (ms) 0 1 2 3 4 0 5 150C VDS (V) 1 3 VGS (V) Figure 6. On-state Output Characteristics Figure 7. Transfer Characteristics www.onsemi.com 5 2 4 5 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 350 400 150C, VGS = 5 V 150C, ID = 0.5 A 300 RDS(on) (mW) 200 100C, ID = 1.7 A 100C, ID = 0.5 A 25C, ID = 1.7 A 100 5 25C, ID = 0.5 A -40C, ID = 0.5 A -40C, ID = 1.7 A 0 4 RDS(on) (mW) 150C, ID = 1.7 A 300 100C, VGS = 5 V 200 100C, VGS = 10 V 25C, VGS = 5 V 150 25C, VGS = 10 V -40C, VGS = 5 V 100 -40C, VGS = 10 V 6 7 8 9 50 0.2 10 VGS (V) 1 1.2 ID (A) Figure 8. RDS(on) vs. Gate-Source Voltage Figure 9. RDS(on) vs. Drain Current 0.4 0.6 0.8 1.4 1.6 1.8 2 8 2 ID = 1.7 A 1.75 -40C 7 VGS = 5 V 1.5 6 ILIM (A) RDS(on) (NORMIALZIZED) 150C, VGS = 10 V 250 1.25 1 25C 5 100C 4 VGS = 10 V 150C 3 0.75 0.5 -40 -20 0 20 40 60 T (C) 80 100 120 2 140 VDS = 10 V 5 6 7 8 9 10 VGS (V) Figure 10. Normalized RDS(on) vs. Temperature Figure 11. Current Limit vs. Gate-Source Voltage 10 8 VGS = 0 V 7 VGS = 10 V IDSS (mA) 6 ILIM (A) 150C 1 5 4 40 60 80 0.01 -40C 0.001 3 20 100C 25C VGS = 5 V VDS = 10 V 2 -40 -20 0 0.1 100 120 0.0001 10 140 15 20 25 30 35 TJ (C) VDS (V) Figure 12. Current Limit vs. Junction Temperature Figure 13. Drain-to-Source Leakage Current www.onsemi.com 6 40 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 1.1 ID = 150 mA VGS = VDS 1.1 1 1 VSD (V) NORMALIZED VGS(th) (V) 1.2 0.9 -40C 0.9 25C 0.8 100C 0.8 0.7 0.7 0.6 0.6 -40 0.5 150C -20 0 20 40 60 80 100 120 140 VGS = 0 V 1 2 3 4 5 T (C) Figure 14. Normalized Threshold Voltage vs. Temperature td(off) tf tr td(on) 3 4 5 6 7 VGS (V) 8 9 10 DRAIN-SOURCE VOLTAGE SLOPE (V/ms) TIME (ms) 100 50 9 10 ID = 2.5 A VDD = 12 V RG = 0 W 0.8 0.6 -dVDS/dt(on) 0.4 dVDS/dt(off) 0.2 0 3 Figure 16. Resistive Load Switching Time vs. Gate-Source Voltage 4 5 6 7 VGS (V) 8 9 10 Figure 17. Resistive Load Switching Drain-Source Voltage Slope vs. Gate-Source Voltage 100 75 td(off), (VGS = 10 V) tr, (VGS = 5 V) tf, (VGS = 10 V) 50 tf, (VGS = 5 V) td(off), (VGS = 5 V) 25 tr, (VGS = 10 V) 0 400 td(on), (VGS = 5 V) td(on), (VGS = 10 V) 800 1200 1600 2000 RG (W) DRAIN-SOURCE VOLTAGE SLOPE (V/ms) 1 ID = 2.5 A VDD = 12 V TIME (ms) 8 1 ID = 2.5 A VDD = 12 V RG = 0 W 150 0 7 Figure 15. Source-Drain Diode Forward Characteristics 200 0 6 IS (A) -dVDS/dt(on), VGS = 10 V 0.8 0.6 0.4 dVDS/dt(off), VGS = 5 V 0.2 0 dVDS/dt(off), VGS = 10 V -dVDS/dt(on), VGS = 5 V 0 Figure 18. Resistive Load Switching Time vs. Gate Resistance 500 1000 RG (W) ID = 2.5 A VDD = 12 V 1500 2000 Figure 19. Drain-Source Voltage Slope during Turn On and Turn Off vs. Gate Resistance www.onsemi.com 7 NCV8402, NCV8402A TYPICAL PERFORMANCE CURVES 100 RqJA 788 mm2 C/W 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 PULSE WIDTH (sec) Figure 20. Transient Thermal Resistance - SOT-223 Package 100 RqJA 788 mm2 C/W 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE WIDTH (sec) Figure 21. Transient Thermal Resistance - DFN Package www.onsemi.com 8 10 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS RL VIN + D RG VDD G DUT - S IDS Figure 22. Resistive Load Switching Test Circuit 90% 10% VIN VDS td(off) + tfall td(on) + trise 90% 10% 90% 10% IDS Figure 23. Resistive Load Switching Waveforms www.onsemi.com 9 NCV8402, NCV8402A TEST CIRCUITS AND WAVEFORMS L VDS VIN D RG + VDD G DUT - S tp IDS Figure 24. Inductive Load Switching Test Circuit 5V VIN 0V Tav Tp V(BR)DSS Ipk VDD VDS VDS(on) IDS 0 Figure 25. Inductive Load Switching Waveforms www.onsemi.com 10 NCV8402, NCV8402A ORDERING INFORMATION Device* NCV8402STT1G NCV8402ASTT1G NCV8402STT3G NCV8402ASTT3G NCV8402AMNT2G NCV8402AMNWT1G Package Shipping SOT-223 (Pb-Free) 1000 / Tape & Reel SOT-223 (Pb-Free) 4000 / Tape & Reel DFN6 (Pb-Free) 2000 / Tape & Reel DFN6 (Pb-Free, Wettable Flank) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN6 3x3, 0.95P CASE 506DK ISSUE O 1 SCALE 2:1 D B A4 CCCC CCCC CCCC PIN 1 REFERENCE 2X 0.10 C 2X 0.10 C PLATED SURFACE DETAIL B L3 DETAIL B A 6X PLATED SURFACE A3 SECTION C-C 0.05 C NOTE 4 C SIDE VIEW SEATING PLANE 1 3 C E2 6 4 XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 6X b 0.10 C A B BOTTOM VIEW MILLIMETERS MIN MAX 0.75 0.95 0.00 0.05 0.20 REF 0.05 0.15 0.35 0.45 3.00 BSC 2.40 2.60 3.00 BSC 1.50 1.70 0.95 BSC 0.30 0.50 0.00 0.10 XXXXX XXXXX ALYWG G C e DIM A A1 A3 A4 b D D2 E E2 e L L3 GENERIC MARKING DIAGRAM* D2 L NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A1 E TOP VIEW 0.10 C DATE 23 JUN 2016 A 0.05 C RECOMMENDED SOLDERING FOOTPRINT* NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 6X 0.60 2.70 PACKAGE OUTLINE 3.30 1.80 1 0.95 PITCH 6X 0.50 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12549G DFN6 3X3, 0.95P Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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