2MBI200PB-140 IGBT Module P-Series 1400V / 200A 2 in one-package Features * Small temperature dependence of the turn-off switching loss * Easy to connect in parallel * Wide RBSOA (square up to 2 time of rated current) and high shortcircuit withstand capability * Low loss and soft-switching (reduction of EMI noise) Equivalent Circuit Schematic Applications E2 C1 * General purpose inverter * AC and DC Servo drive amplifier C2E1 * Uninterruptible power supply G1 E1 Maximum ratings and characteristics G2 E2 Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Symbol VCES Gate-Emitter voltage Collector current VGES IC ICp Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *3 -IC -IC pulse PC Tj Tstg Viso Conditions Continuous Tc=25C Tc=80C 1ms Tc=25C Tc=80C 1 device AC:1min. Rating 1400 20 300 200 600 400 200 400 1500 +150 -40 to +125 2500 3.5 4.5 Unit V V A W C VAC N*m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N*m(M5) *3 : Recommendable value : 3.5 to 4.5 N*m(M6) Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) VGE=0V, VCE=1400V VCE=0V, VGE=20V VCE=20V, IC=200mA VGE=15V, IC=200A, Tj=25C Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Cies Coes Cres ton tr toff tf VF t rr VGE=15V, IC=200A, Tj=125C VCE=10V VGE=0V f=1MHz VCC =600V IC=200A VGE=15V RG= 4.7 IF=200A, VGE=0V IF=200A Turn-off time Diode forward on voltage Reverse recovery time Characteristics Min. Typ. - - - - 6.0 8.0 - 2.7 - 3.3 - 20000 - 3000 - 1300 - - - - - - - - - 2.4 - - Max. 2.0 400 9.0 3.0 - - - - 1.20 0.60 1.00 0.30 3.3 0.35 Unit Characteristics Min. Typ. - - - - - 0.025 Max. 0.085 0.180 - mA nA V V pF s V s Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT Diode the base to cooling fin *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit C/W C/W C/W IGBT Module 2MBI200PB-140 Characteristics (Representative) http://store.iiic.cc/ IGBT Module 2MBI200PB-140 http://store.iiic.cc/ IGBT Module 2MBI200PB-140 Outline Drawings, mm M235 http://store.iiic.cc/