1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from
the damage caused by ESD and other transients.
1.2 Features
1.3 Applications
1.4 Quick reference data
PESD5V0L1UA; PESD5V0L1UB;
PESD5V0L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009 Product data sheet
Table 1. Product overview
Type number Package Package configuration
NXP JEITA
PESD5V0L1UA SOD323 SC-76 very small
PESD5V0L1UB SOD523 SC-79 ultra small and flat lead
PESD5V0L1UL SOD882 - leadless ultra small
nUnidirectional ESD protection of
one line
nESD protection up to 26 kV
nLow diode capacitance: Cd=25pF nIEC 61000-4-2; level 4 (ESD)
nLow clamping voltage: VCL =12V nAEC-Q101 qualified
nVery low leakage current: IRM =10nA
nComputers and peripherals nSubscriber Identity Module (SIM) card
protection
nAudio and video equipment nPortable electronics
nCellular handsets and accessories nFireWire
nCommunication systems nHigh-speed data lines
Table 2. Quick reference data
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5.0 V
Cddiode capacitance f = 1 MHz; VR=0V- 2530pF
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 2 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
PESD5V0L1UA; PESD5V0L1UB
1 cathode [1]
2 anode
PESD5V0L1UL
1 cathode [1]
2 anode
001aab540
12
006aaa152
2
1
21
Transparent
top view
006aaa152
2
1
Table 4. Ordering information
Type number Package
Name Description Version
PESD5V0L1UA SC-76 plastic surface-mounted package; 2 leads SOD323
PESD5V0L1UB SC-79 plastic surface-mounted package; 2 leads SOD523
PESD5V0L1UL - leadless ultra small plastic package; 2 terminals;
body 1.0 ×0.6 ×0.5 mm SOD882
Table 5. Marking codes
Type number Marking code
PESD5V0L1UA 1J
PESD5V0L1UB Z8
PESD5V0L1UL XY
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 3 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
5. Limiting values
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPP peak pulse power tp= 8/20 µs[1][2] -42W
IPP peak pulse current tp= 8/20 µs[1][2] - 3.5 A
Tjjunction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1] -26kV
machine model - 400 V
MIL-STD-883 (human
body model) -10kV
Table 8. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 4 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (µs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
e−t
100 % IPP; 8 µs
50 % IPP; 20 µs
001aaa631
IPP
100 %
90 %
t
30 ns 60 ns
10 %
tr = 0.7 ns to 1 ns
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5.0 V
IRM reverse leakage current VRWM = 5.0 V - 10 100 nA
VBR breakdown voltage IR= 5 mA 6.4 6.8 7.2 V
Cddiode capacitance f = 1 MHz;
VR=0V - 2530pF
VCL clamping voltage [1][2]
IPP =1A --9V
IPP = 3.5 A - - 12 V
rdif differential resistance IR=5mA --30Ω
VFforward voltage IF= 200 mA - - 1.2 V
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 5 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
f = 1 MHz; Tamb =25°C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values Fig 4. V-I characteristics for a unidirectional
ESD protection diode
VR (V)
054231
006aab565
20
25
15
30
35
Cd
(pF)
10
006aaa407
−VCL −VBR −VRWM −IRM
−IR
−IPP
V
I
P-N
−+
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 6 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
Fig 5. ESD clamping test setup and waveforms
006aab566
50 Ω
RZ
CZ
DUT
(Device
Under
Test)
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped −8 kV ESD voltage waveform
(IEC 61000-4-2 network)
450 ΩRG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 6 V/div
horizontal scale = 100 ns/div
vertical scale = 6 V/div
horizontal scale = 100 ns/div
GND
GND
GND
GND
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 7 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD5V0L1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD5V0L1Ux series provides a surge capability up to 42 W per line for an 8/20 µs
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
Fig 6. Application diagram
006aab613
GND
line to be protected
(positive signal polarity)
PESD5V0L1Ux
unidirectional protection of one line
GND
line to be protected
(negative signal polarity)
PESD5V0L1Ux
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 8 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 7. Package outline
PESD5V0L1UA (SOD323/SC-76) Fig 8. Package outline
PESD5V0L1UB (SOD523/SC-79)
Fig 9. Package outline PESD5V0L1UL (SOD882)
03-12-17Dimensions in mm
0.25
0.10
0.45
0.15
2.7
2.3 1.8
1.6
0.40
0.25
1.1
0.8
1.35
1.15
1
2
02-12-13Dimensions in mm
1.65
1.55 1.25
1.15
0.17
0.11
0.34
0.26
0.65
0.58
0.85
0.75
1
2
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 8000 10000
PESD5V0L1UA SOD323 4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0L1UB SOD523 2 mm pitch, 8 mm tape and reel - -315 -
4 mm pitch, 8 mm tape and reel -115 - -135
PESD5V0L1UL SOD882 2 mm pitch, 8 mm tape and reel - - -315
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 9 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
11. Soldering
Fig 10. Reflow soldering footprint PESD5V0L1UA (SOD323/SC-76)
Fig 11. Wave soldering footprint PESD5V0L1UA (SOD323/SC-76)
0.951.65
2.2
2.1
3.05
solder lands
solder resist
occupied area
solder paste
0.5
(2×)
0.6
(2×)
0.6 (2×)0.5 (2×)
sod323_fr
Dimensions in mm
1.5 (2×)
2.9
5
1.2
(2×)
2.75
sod323_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 10 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint PESD5V0L1UB (SOD523/SC-79)
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint PESD5V0L1UL (SOD882)
solder lands
solder resist
occupied area
solder paste
Dimensions in mm
0.6
(2×)
0.5
(2×)
2.15
1.1
0.7
(2×)
0.8
(2×)
1.2
sod523_fr
solder lands
solder resist
occupied area
solder paste
sod882_fr
0.9
0.3
(2×)
R0.05 (8×)
0.6
(2×) 0.7
(2×)
0.4
(2×)
1.3
0.7
Dimensions in mm
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 11 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
12. Revision history
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0L1UA_UB_UL_1 20090617 Product data sheet - -
PESD5V0L1UA_UB_UL_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 June 2009 12 of 13
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 June 2009
Document identifier: PESD5V0L1UA_UB_UL_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 12
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
