DATA SH EET
Product specification
Supersedes data of November 1992 1995 Sep 18
DISCRETE SEMICONDUCTORS
BFR93AW
NPN 5 GHz wideband transistor
1995 Sep 18 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) pac k age.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN DESCRIPTION
1base
2emitter
3 collector
Marking code: R2.
Fig.1 SOT323
handbook, 2 columns 3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
ICcollector current (DC) 35 mA
Ptot total power dissipation up to Ts=93C; note 1 300 mW
hFE DC current gain IC=30mA; V
CE =5V 40 90
Cre feedback capacitance IC=0; V
CE = 5 V; f = 1 MHz;
Tamb =25C0.6 pF
fTtransition frequency IC=30mA; V
CE =5V; f=500MHz 4 5 GHz
GUM maximum unilateral power
gain IC=30mA; V
CE =8V; f=1GHz;
Tamb =25C13 dB
IC=30mA; V
CE =8V; f=2GHz;
Tamb =25C8dB
Fnoise figure I
C=5mA; V
CE = 8 V; f = 1 GHz;
s=opt
1.5 dB
Tjjunction temperature 150 C
1995 Sep 18 3
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating S ystem (IEC 134).
SYMBOL PARAMETER CONDITION MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 12 V
VEBO emitter-base voltage open collector 2V
ICcollector current (DC) 35 mA
Ptot total power dissipation up to Ts=93C; see Fig.2; note 1 300 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 150 C
Fig.2 Power derating curve.
0 50 100 200
200
0
MLB540
150T ( C)
o
s
Ptot
(mW)
300
400
100
THERMAL CHARACTE RISTI CS
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the sold ering point of the collector pin.
SYMBOL PARAMETER CONDITION VALUE UNIT
Rth j-s thermal resistance from junction to
soldering point up to Ts=93C; note 1 190 K/W
1995 Sep 18 4
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
CHARACTERISTICS
Tj=25C (unless otherwise specified).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector leakage current IE=0; V
CB =5V 50 nA
hFE DC current gain IC=30mA; V
CE =5V 40 90
Cccollector capacitance IE=i
e=0; V
CB =5V; f=1MHz 0.7 pF
Ceemitter capacita nce IC=i
c=0; V
EB =0.5V;
f=1MHz 2.3 pF
Cre feedback ca pacitance IC=0; V
CE =5V; f=1MHz 0.6 pF
fTtransition frequenc y IC=30mA; V
CE =5V;
f=500MHz 45GHz
GUM maximum unilateral power
gain; note 1 IC=30mA; V
CE =8V;
f=1GHz; T
amb =25C13 dB
IC=30mA; V
CE =8V;
f=2GHz; T
amb =25C8dB
F noise figure IC=5mA; V
CE =8V;
f=1GHz; s=opt
1.5 dB
IC=5mA; V
CE =8V;
f=2GHz; s=opt
2.1 dB
GUM 10 s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB.log=
1995 Sep 18 5
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.3 DC current gain as a function of collector
current; typical values.
VCE =5V.
handbook, halfpage
0102030
120
0
40
80
MCD087
hFE
I (mA)
C
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
IC=0; f=1MHz.
0
1
0
MBG203
48
Cre
(pF)
0.8
0.6
0.4
0.2
12 16
VCB (V)
Fig.5 Transition frequency as a function
of collector current; typical values.
VCE = 5 V; f = 500 MHz; Tamb =25C.
4
2
0
MBG204
6
102
101
fT
(GHz)
IC (mA)
1995 Sep 18 6
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.6 Gain as a function of collector current;
typical values.
VCE =8V; f=500MHz.
0
30
20
10
010 20
MBG202
30
GUM
MSG
IC (mA)
gain
(dB)
Fig.7 Gain as a function of collector current;
typical values.
VCE =8V; f=1GHz.
0
30
20
10
010 20
MBG201
30
MSG
GUM
gain
(dB)
IC (mA)
Fig.8 Gain as a function of frequency;
typical values.
VCE =8V; I
C=10mA.
handbook, halfpage
50
010
MBG200
102103104
10
20
30
40
f (MHz)
GUM
Gmax
MSG
gain
(dB)
Fig.9 Gain as a function of frequency;
typical values.
VCE =8V; I
C=30mA.
handbook, halfpage
50
010
MBG207
102103104
10
20
30
40
f (MHz)
GUM
Gmax
MSG
gain
(dB)
1995 Sep 18 7
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.10 Minimum noise figur e as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
2
4
2
010
MGC901
101
6
1 GHz
500 MHz
f = 2 GHz
F
(dB)
IC (mA)
Fig.11 Minimum noise figur e as a function of
collector current; typical values.
VCE =8V.
handbook, halfpage
4
2
0
MGC900
6
f (MHz) 10
4
10
3
10
2
IC = 30 mA
10 mA
5 mA
F
(dB)
Fig.12 Common emitter noise figure circles; typica l values.
f=500MHz; V
CE =8V; I
C=10mA; Z
o=50
handbook, full pagewidth
MGC879
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o0.5
0
0.2
0.5
1
2
5
2
F = 4 dB
F = 3 dB
F = 2 dB
opt
Γ
F = 1.4 dB
min
0.2
2
1 5
5
o
180 0.2 0.5
1
1995 Sep 18 8
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.13 Common emitter noise figure circles; typica l values.
f=1GHz; V
CE =8V; I
C=10mA; Z
o=50
handbook, full pagewidth
MGC880
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.50.2
0.2
F = 2.5 dB
F = 3 dB
F = 4 dB
0.2
opt
Γ
F = 2 dB
min
0G = 13 dB
ms
Γ
G = 13.8 dB
max
G = 12 dB
G = 11 dB
f=2GHz; V
CE =8V; I
C=10mA; Z
o=50
Fig.14 Common emitter noise figure circles; typica l values.
handbook, full pagewidth
MGC881
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
1
2
5
21 5
180o
2
5
0.5
0.2
0.2 (4)
(3)
(2)
(5)
(6)
(7) (8)
(1)
0.2
00.5
(1) opt; Fmin =3dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(4) F = 5 dB.
(5) ms;G
max =8.1dB.
(6) G = 7 dB.
(7) G = 6 dB.
(8) G = 5 dB.
1995 Sep 18 9
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.15 Common emitter input reflection coefficient (s11); typical values.
VCE =8V; I
C=30mA; Z
o=50.
handbook, full pagewidth
MGC878
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
45o
90o
135o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180 0.2 1
00.5
40 MHz
3 GHz
VCE =8V; I
C=30mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
handbook, full pagewidth
MGC898
0o
90o
135o
180o
90o
50 40 30 20 10
45o
135o45o
40 MHz 3 GHz
1995 Sep 18 10
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
VCE =8V; I
C=30mA.
handbook, full pagewidth
MGC899
0o
90o
135o
180o
90o
0.5 0.4 0.3 0.2 0.1
45o
135o45o
40 MHz
3 GHz
VCE =8V; I
C=30mA; Z
o=50.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
handbook, full pagewidth
MGC877
00o
0.2
0.6
0.4
0.8
1.0
1.0
45o
90o
135o
180o
45o
90o
135o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
1995 Sep 18 11
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface-mounted package; 3 leads SOT323
04-11-04
06-03-16
1995 Sep 18 12
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efore initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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provided in a Product data she et shall define the
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Semiconductors and its custo m er, unless NXP
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product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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associated with their ap plications and produ cts.
1995 Sep 18 13
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93AW
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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reliability of the device.
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Printed in The Netherlands R77/02/pp14 Date of release: 1995 Sep 18
