Philips Semiconductors N-channel silicon field-effect transistors FEATURES e Low noise * Interchangeability of drain and source connections High gain. APPLICATIONS e AM input stage in car radios e VHF amplifiers e Oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Product specification PMBFJ308; PMBFJ309; CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PMBFJ310 PINNING - SOT23 PIN SYMBOL DESCRIPTION 1 s source 2 d drain 3 g gate 2 1 d 9 s 3 Top view MAMO36 Marking codes: PMBFU308: M08. PMBFU309: M09. PMBFu310: M10. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vos drain-source voltage - +25 Vv Vasott gate-source cut-off voltage Vos = 10V; Ip =1 pA PMBFJ308 -1 -6.5 Vv PMBFJ309 -1 -4 Vv PMBFJ310 ~2 -6.5 Vv loss drain current Ves = 0; Vps = 10 V PMBFJ308 12 60 mA PMBFJ309 12 30 mA PMBFJ310 24 60 mA Prot total power dissipation UP tO Tamb = 25 C ~ 250 mw lyis! forward transfer admittance Vos = 10 V; Ip = 10 mA 10 - mS 1996 Sep 11 501Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBF J309; PMBFJ310 LIMITING VALUES in accardance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vps drain-source voltage - +25 Vv Veso gate-source voltage open drain - -25 Vv Veco gate-drain voltage open source _ -25 Vv Ig forward gate current (DC) - 50 mA Prot total power dissipation up to Tamb = 25 C - 250 mW Tstg storage temperature ~65 150 C Tj operating junction temperature - 150 C 400 Prot (mw) 300 200 100 MBBES8 Tamb (C) Fig.2 Power derating curve. 1996 Sep 11 502Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rihj-a thermal resistance from junction to ambient; note 1 500 KAW Note 1. Device mounted on an FR4 printed-circuit board. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Visrjass gate-source breakdown voltage | lg =1 pA; Vps = 0 -25 - ~ Vv Vesott gate-source cut-off voltage Ip = 1 LA; Vos = 10 V Vv PMBFJ308 ~1 - -6.5 Vv PMBFJ309 ~1 ~ 4 Vv PMBFJ310 ~2 - -6.5 Vv Vess gate-source forward voltage Ig = 1 MA; Vps = 0 - - 1 Vv loss drain current Vps = 10 Vi Ves = 0 PMBFJ308 12 ~ 60 mA PMBFJ309 12 ~ 30 mA PMBFJ310 24 - 60 mA less gate leakage current Ves = -15 V; Vos = 0 ~ ~ -1 nA Roson drain-source on-state Ves =0;Vps=100mV |- 50 - Q resistance lyis | forward transfer admittance Ip=10MA;Vps=10V | 10 - - mS | common source output Ip=10MA;Vpg=10V |- - 250 us admittance 1996 Sep 11 503Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309, PMBFJ310 DYNAMIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. | MAX. | UNIT Cis input capacitance Vos = 10 V; Veg = -10 V; f= 1 MHz 3 5 pF Vos = 10 V; Vag = 0; Tamp = 25 C 6 - pF Crs reverse transfer capacitance Vos = 0; Veg = -10 V; f = 1 MHz 1.3 25 pF Gis common source input Vos = 10 V; Ip = 10 mA; f = 100 MHz 200 ~ us conductance Vps = 10 V; Ip = 10 mA: f = 450 MHz 3 - mS Gis common source transfer Vos = 10 V; lp = 10 mA; f = 100 MHz 13 ~ mS conductance Vos = 10 V; Ip = 10 mA; f = 450 MHz 12 - ms Ors common source reverse Vps = 10 V; Ip = 10 mA; f = 100 MHz -30 ~ nS conductance Vpg = 10 V; Ip = 10 mA; f = 450 MHz -450 |- us Gos common source output Vos = 10 V; Ip = 10 mA; f = 100 MHz 150 - nS conductance Vps = 10 V; Ip = 10 mA; f = 450 MHz 400. |- us Vn equivalent input noise voltage | Vps = 10 V; Ip = 10 mA; f = 100 Hz 6 - nVWHz 50 pss (mA} 40 30 20 0 -1 ~2 -3 Vos = 10 V; Tj= 25C. cut-off voltage; typical values. MCD220 Vasott () Fig.3 Drain current as a function of gate-source 20 \ts! (mS) 16 12 4 9 -2 values. Vos = 10 V; Ip = 10 mA; Tj = 25 C. MCD219 6 -8 Vesatt (V) Fig.4 Forward transfer admittance as a function of gate-source cut-off voltage; typical 1996 Sep 11 504Philips Semiconductors Product specification wi: . . PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBEJ310 MCD221 150 7 tes AS 50 0 -1 -2 -3 -4 Vasott (VY) Vps = 10 V; Ip = 10 mA; T; = 25 C. Fig. Common-source output conductance as a function of gate-source cut-off voltage; typical values. MCD222 80 Apson (Q) 60 40 20 0 4 2 -3 4 Vesott () Vps = 100 mV; Ves = 0; T;= 25 C. Fig.6 Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. MCD216 T)= 25C. Fig.7 Typical output characteristics; PMBFJ308. MCD213 16 'b (mA) Vos = 10 V; Tj=25 C. Fig.8 Typical transfer characteristics; PMBFJ308. 1996 Sep 11 505Philips Semiconductors Product specification wy: . . PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 MmcO218 Tj= 25C. Fig.9 Typical output characteristics; PMBFJ309. MCD215 20 ID (mA) 16 12 -2 ~1.5 ~1 -0.5 0 Vas () Vps = 10 V; T)= 25 C. Fig.10 Typical transfer characteristics; PMBFJ309. MCD217 40 Veg =0V (mA) 30 20 Vos ) T= 25C. Fig.11 Typical output characteristics; PMBFJ310. MCD214 40 (mA) 30 20 410 Ves (Y) Vps = 10 V; y= 25C. Fig.12 Typical transfer characteristics; PMBFJ310. 1996 Sep 11 506Philips Semiconductors Product specification N-channel silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 McD224 Ves (Y) Vos = 10 V; T= 25C. Fig.13 Reverse transfer capacitance as a function of gate-source voltage; typical values. MCD223 Cis (pF) 0 -10 Vas (VY) Vos = 10 V; Tj = 25 C. Fig.14 Input capacitance as a function of gate-source voltage; typical values. 10 1071 10? 10-3 Vps = 10 V; T= 25 C. MCD229 Fig.15 Drain current as a function of gate-source voltage; typical values. 1996 Sep 11 507Philips Semiconductors Product specification a . . PMBFJ308; PMBFJ309; N-channel silicon field-effect transistors PMBFJ310 MCD230 -104 (pA) ~103 -10? -1 -1071 T= 25C. Fig.16 Gate current as a function of drain-gate voltage; typical values. MCD231 404 lass (pA) 10 7; (eC) Fig.17 Gate current as a function of junction temperature; typical values. 1996 Sep 11 508Philips Semiconductors N-channel silicon field-effect transistors Product specification PMBFJ308; PMBFJ309; PMBFJ310 MCD228 100 Gis bis (mS) O.1 10 100 1000 t (MHz) Vog = 10 V: Ip = 10 MA: Tamb = 25 C. Fig.18 Input admittance; typical values. MCD227 100 Gis: bis (mS) 10 10 100 1000 f (MHz) Vos = 10 V; Ip = 10 MA; Tamb = 25 C. Fig.19 Forward transfer admittance; typical values. MC0226 107 brs, Ors (mS) 10 1 10-71 10-2 10 100 1000 f (MHz} Vpg = 10 V; Ip= 10 MA; Tamp = 25 C. Fig.20 Reverse transfer admittance; typical values. Ds 400 wn bos: 9os (mS) 10 0.1 10 100 1000 t (MHz) Vps = 10 V; Ip = 10 MA; Tamp = 25 C. Fig.21 Output admittance; typical values. 1996 Sep 11 509