HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching Features * High reverse voltage. Vp=250V) Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Outline Cathode mark 4) 1. Cathode 2. Anode Type No. Laser Mark Package Cod HSU83 T URP Absolute Maximum Ratings * (Ta = 25C) Item Symbol Value Unit Peak reverse voltage Vam 300 Vv Reverse voltage Va 250 V Peak forward current lem 300 mA Non-Repetitive peak forward surge current lesa 2 A Average forward current lo 100 mA Junction temperature qj 125 C Storage temperature Tstg -5 to +125 C * Value at duration of 10msec Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Condition Forward voltage Ve _ _ 1.2 V Ip = 100 mA lay _ 0.2 Vay = 250 V Reverse current pA ipo 100 Vp = 300 V Capacitance Cc _ _ 3.0 pF Vp =O0V,f=1 MHz Reverse recovery time trr _ _ 160 ns Ie=IQ=30mA, Ir=3mA,R_=1002 139HSU83 Forward current Ie (A) 10 1.0 Capacitance C (pF) 10" 1.0 0.2 0.4 0.6 0.8 Forward voltage Ve (V) Fig.1 Forward current Vs. Forward voltage 10 Reverse voltage Vp (V) Fig.3 Capacitance Vs. Reverse voltage 1.0 107 Reverse current Ip (A) 50 400 150 200 250 Reverse voltage Vp (V) Fig.2 Reverse current Vs. Reverse voltage 140