QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description * * * * * * * * The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor T-3/4 (2 mm) Surface Mount Package Medium Wide Beam Angle: 24 Black Plastic Package Matched Emitters: QEB363 or QEB373 Daylight Filter Tape & Reel Option (see Tape & Reel Specifications) Lead Form Options: Gull-wing, Yoke, Z-Bend SCHEMATIC COLLECTOR EMITTER Ordering Information Part Number Package Operating Temperature Packing Method QSB363 T-3/4 Bulk QSB363GR T-3/4 Gull-wing Tape and Reel T-3/4 Yoke Tape and Reel T-3/4 Z-Bend Tape and Reel QSB363YR -40 to +85C QSB363ZR (c) 2005 Fairchild Semiconductor Corporation QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 www.fairchildsemi.com 1 QSB363 / QSB363GR / QSB363YR / QSB363ZR -- Subminiature Plastic Silicon Infrared Phototransistor June 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise specified. Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature Min. Unit -40 to +85 -40 to +85 (1,2) C TSOL-I Soldering Temperature (Iron) 260 TSOL-F Soldering Temperature (Flow)(1,2) 260 VCEO Collector Emitter Voltage 30 VECO Emitter Collector Voltage 5 V 75 mW PC Power Dissipation (3) Notes: 1. RMA flux is recommended. 2. Methanol or isopropyl alcohols are recommended as cleaning agents. 3. Derate power dissipation linearly 1.08 mW/C above 25C. Electrical / Optical Characteristics Values are at TA = 25C unless specified otherwise. Symbol Parameter P Peak Sensitivity Wavelength Reception Angle ICEO Test Conditions Min. Typ. Max. 940 12 Units nm o Collector Dark Current VCE = 20 V, Ee = 0 mW/cm2 BVCEO Collector-Emitter Breakdown Voltage IC = 100 A, Ee = 0 mW/cm2 30 V BVECO Emitter-Collector Breakdown Voltage IE = 100 A, Ee = 0 mW/cm2 5 V IC(ON) On-State Collector Current VCE = 5 V, Ee = 1 mW/cm2, = 940 nm GaAs Collector-Emitter Saturation Voltage IC = 2 mA, Ee = 1 mW/cm2, = 940 nm GaAs VCE(SAT) tr Rise Time tf Fall Time (c) 2005 Fairchild Semiconductor Corporation QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 VCE = 5 V, IC = 1 mA, RL = 1000 100 1.0 1.5 nA mA 0.4 V 15 s 15 s www.fairchildsemi.com 2 QSB363 / QSB363GR / QSB363YR / QSB363ZR -- Subminiature Plastic Silicon Infrared Phototransistor Absolute Maximum Ratings Figure 1. Collector Power Dissipation vs. Ambient Temperature Figure 2. Spectral Sensitivity Figure 3. Relative Collector Current vs. Ambient Temperature Figure 4. Collector Current vs. Irradiance Figure 5. Collector Dark Current vs. Ambient Temperature Figure 6. Collector Current vs. Collector Emitter Voltage (c) 2005 Fairchild Semiconductor Corporation QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 www.fairchildsemi.com 3 QSB363 / QSB363GR / QSB363YR / QSB363ZR -- Subminiature Plastic Silicon Infrared Phototransistor Typical Performance Characteristics T-3/4 EMITTER 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) 0.106 (2.7) 0.091 (2.3) 0.024 (0.6) Notes: 1.Dimensions for all drawings are in inches (mm). 2.Tolerance of 0.010 (0.25) on all non-nominal dimensions unless otherwise specified. Figure 7. T-3/4, 2 MM DETECTOR (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. (c) 2005 Fairchild Semiconductor Corporation QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 www.fairchildsemi.com 4 QSB363 / QSB363GR / QSB363YR / QSB363ZR -- Subminiature Plastic Silicon Infrared Phototransistor Physical Dimensions Features Three lead forming options: Gull-wing, Yoke and Z-Bend Compatible with automatic placement equipment Supplied on tape and reel or in bulk packaging Compatible with vapor phase reflow solder processes Z-Bend Lead Configuration o0.0750.008 (1.90.2) CL 0.0120.004 (0.30.1) +0.005 0.032 -0 (0.83 0.0290.004 (0.750.1) 0.0510.004 (1.30.1) 0.0060.002 (0.150.05) +0.005 0.023 -0 (0.6 +0.13 ) -0 0.0550.004 (1.40.1) +0.13 ) -0 0.120.008 (3.050.2) 0.1690.008 (4.30.2) 0.2280.008 (5.80.2) 0.0250.004 (0.650.1) 0.0160.004 (0.40.1) 0.0200.004 (0.50.1) 0.0430.008 0.0550.008 R0.031.004 (1.10.2) (1.40.2) (0.80.1) 0.1060.008 (2.70.2) 0.0060.002 (0.150.05) 0.0250.004 (0.650.1) 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) CL CL 0.0790.008 (2.00.2) 0.0160.004 (0.40.1) CL 0.0200.004 (0.50.1) 0.1570.008 (4.00.2) Collector 0.0980.004 (2.50.1) 0.0790.008 (2.00.2) 0.0980.004 (2.50.1) o0.0750.008 (o1.90.2) Collector 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) Gull-wing Lead Configuration 0.0550.004 (1.40.1) 0.0290.004 (0.750.1) Yoke Lead Configuration o0.0750.008 (1.90.2) 0.0980.004 (2.50.1) 0.0060.002 (0.150.05) R0.016.004 (0.40.1) 0.1850.008 (4.70.2) 0.2910.008 (7.40.2) (c) 2005 Fairchild Semiconductor Corporation QSB363 / QSB363GR / QSB363YR / QSB363ZR Rev. 1.1.0 0.0290.004 (0.750.1) 0.0510.004 (1.30.1) 0.1060.008 (2.70.2) 0.0430.008 0.0550.008 (1.10.2) (1.40.2) R0.031.004 (0.80.1) 0.0250.004 (0.650.1) 0.0160.004 (0.40.1) 0.0200.004 (0.50.1) CL 0.0790.008 (2.00.2) CL Collector 0.0550.004 (1.40.1) www.fairchildsemi.com 5 QSB363 / QSB363GR / QSB363YR / QSB363ZR -- Subminiature Plastic Silicon Infrared Phototransistor Physical Dimensions (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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