MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 80 (7) 20 B2 E2 27 6.5 10.5 13 10.5 34 20 B2 E2 C2E1 C2E1 E2 C1 E2 C1 E1 B1 12 E1 B1 Tab#110, t=0.5 (8) LABEL 22.5 31 6.5 M5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A -IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25C 310 W IB Base current DC 3 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Conditions Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M6 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.96~2.94 N*m 20~30 kg*cm 210 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 1.0 mA IEBO Emitter cutoff current VEB=7V -- -- 200 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=50A (diode forward voltage) -- -- 1.75 V hFE DC current gain IC=50A, VCE=2V/5V 75/100 -- -- -- -- -- 1.5 s Switching time VCC=300V, IC=50A, IB1=-IB2=1A -- -- 12 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.4 C/ W Diode part (per 1/2 module) -- -- 1.3 C/ W Conductive grease applied (per 1/2 module) -- -- 0.15 C/ W IC=50A, IB=0.65A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 IB=1A DC CURRENT GAIN hFE IB=0.65A 80 IB=0.3A 60 IB=0.2A 40 IB=0.1A 20 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 1.6 2.0 2.4 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 2.8 3.2 101 7 5 4 3 2 10 0 7 5 4 VCE(sat) 3 IB=0.65A 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 IC=50A 2 1 0 10 -2 2 3 4 5 7 10 -1 IC=30A 2 3 4 5 7 10 0 BASE CURRENT IB (A) 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 ton, ts, tf (s) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 4 2 3 4 5 7 10 1 VBE(sat) VBE (V) Tj=25C Tj=125C IC=20A Tj=25C Tj=125C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 5 VCE=2.0V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.0V Tj=25C 10 -1 1.2 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 4 3 2 10 1 10 0 5 SATURATION VOLTAGE Tj=25C COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 1 7 5 4 3 2 ts VCC=300V IB1=-IB2=1A ton 10 0 7 5 4 3 2 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 tf 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 160 3 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 2 ts 10 1 7 VCC=300V 5 IB1=1A 4 IC=50A 3 2 tf 10 0 7 5 4 3 10 -1 Tj=25C Tj=125C 2 3 4 5 7 10 0 120 IB2=-1A 100 BASE REVERSE CURRENT -IB2 (A) 60 40 20 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 7 0.5 400 90 DERATING FACTOR (%) 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 200 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 10 1 7 5 3 2 0 DERATING FACTOR OF F. B. S. O. A. 50 10 0 0 s s C D s s m 1m 10 -5A -10A FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 -3A 80 0 2 3 4 5 7 10 1 Tj=125C 140 10 2 7 5 4 3 2 TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25C Tj=125C VCC=300V IB1=-IB2=1A 10 1 Irr trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 0 Qrr 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999