IXA 20PG1200DHGLB Advanced Technical Information XPT IGBT phaseleg IC25 = 32 A = 1200 V VCES VCE(sat) typ = 1.8 V ISOPLUSTM Surface Mount Power Device 7 D3 6 D1 S1 4 5 7 D4 9 1 D2 3 S2 Iso la to ted he su at rfa sin ce k 8 9 4 6 5 2 1 3 2 E72873 8 Features IGBTs S1, S2 Symbol Conditions VCES TVJ = 25C to 150C Maximum Ratings VGES IC25 IC80 TC = 25C TC = 80C ICM VCEK VGE = 15 V; RG = 56 W; TVJ = 125C RBSOA, clamped inductive load; L = 100 H tSC (SCSOA) VCE = 900 V; VGE = 15 V; RG = 56 W; TVJ = 125C none repetitive Ptot TC = 25C Symbol Conditions 1200 V 20 V 32 23 A A 45 VCES A 10 s 130 W Characteristic Values (TVJ = 25C, unless otherwise specified) min. VCE(sat) IC = 15 A; VGE = 15 V; VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; IGES VCE = 0 V ; VGE = 20 V TVJ = 25C TVJ = 125C max. 1.8 2.1 2.1 V V 6.5 V 125 A A 500 nA 5.4 TVJ = 25C TVJ = 125C td(on) tr td(off) tf Eon Eoff E(rec)off Inductive load; TVJ = 125C VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 W Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 15 A RthJC RthJH with heatsink compound (IXYS test setup) 250 70 40 250 100 1.55 1.7 ns ns ns ns mJ mJ tbd 48 pF nC 1.35 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved typ. 1.0 1.7 * XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits * SonicTM diode - fast reverse recovery - low operating forward voltage - low leakage current * VCEsat detection diode - integrated into package - very fast diode * Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability Applications * Phaseleg - buck-boost chopper * Full bridge - power supplies - induction heating - four quadrant DC drives - controlled rectifier * Three phase bridge - AC drives - controlled rectifier K/W K/W 20120131b 1-5 IXA 20PG1200DHGLB Advanced Technical Information Diodes D1, D2 Symbol Conditions IF25 IF80 TC = 25C TC = 80C Symbol Conditions Equivalent Circuits for Simulation Maximum Ratings 27 18 A A Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VF IF = 20 A IRM trr Erec IF = 20 A; RG = 56 W; TVJ = 125C VR = 600 V; VGE = -15 V 20 350 tbd RthJC RthJH per diode with heatsink compound (IXYS test setup) 1.75 TVJ = 25C TVJ = 125C 2.0 2.0 2.3 V V A ns mJ 1.35 2.2 Conduction I V0 R0 IGBTs (typ. at VGE = 15 V; TJ = 125C) S1, S2 V0 = 1.1 V; R0 = 90 mW Diodes (typ. at TJ = 125C) D1, D2 V0 = 1.3 V; R0 = 41 mW K/W K/W Diodes D3, D4 Symbol Conditions VR TC = 25C to 150C Symbol Conditions Maximum Ratings 1200 V Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VF IF = 1 A TVJ = 25C TVJ = 125C 1.7 1.5 IR VR = 1200 V TVJ = 25C TVJ = 125C IRM trr IF = 1 A; diF /dt = -100 A/s; TVJ = 25C VR = 100 V; VGE = 0 V 2.2 V V 2 30 A A 2.3 40 A ns Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz FC mounting force Symbol Conditions CP coupling capacity between shorted pins and backside metal dS, dA dS, dA pin - pin pin - backside metal -55...+150 -55...+125 C C 2500 V~ 40 ... 130 N Characteristic Values min. typ. max. 90 pF 1.65 4 CTI mm mm 400 Weight 8 g Ordering Ordering Name Marking on Product Delivering Base Ordering Mode Qty Code Standard IXA20PG1200DHGLB IXA20PG1200DHGLB Tape&Reel IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 200 tbd 20120131b 2-5 IXA 20PG1200DHGLB Advanced Technical Information (6x) 1 0,05 2) 5,5 0,1 Dimensions in mm (1 mm = 0.0394") 0 +0,15 2 0,1 A (8 : 1) 25 0,2 1) seating plane 18 0,1 4 0,05 (3x) 2 0,05 2) 0,55 0,1 32,7 0,5 23 0,2 2 0,2 9 0,1 4,85 0,2 0,5 0,1 A 3) 0,05 2,75 0,1 5,5 0,1 13,5 0,1 16,25 0,1 19 0,1 Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 m convex; position of DCB area in relation to plastic rim: 25 m (measured 2 mm from Cu rim) 4) terminal plating: 0.2 - 1 m Ni + 10 - 25 m Sn (gal v.) cutting edges may be partially free of plating IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 20120131b 3-5 IXA 20PG1200DHGLB Advanced Technical Information 30 IC [A] 30 VGE = 15 V 25 25 20 20 TVJ = 25C 15 IC TVJ = 125C 11 V TVJ = 125C 15 [A] 10 9V 10 5 0 13 V VGE = 15 V 17 V 19 V 5 0 1 2 0 3 VCE [V] Fig. 1 Typ. output characteristics 0 1 2 3 VCE [V] 4 5 Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC [A] VGE 15 10 [V] 10 5 0 5 TVJ = 125C TVJ = 25C 5 6 7 8 9 10 11 12 0 13 0 10 20 VGE [V] 4 E Eon 2.4 Eoff E [mJ] [mJ] 1 5 10 60 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current 140 160 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved IC = 15 A VCE = 600 V VGE = 15 V TVJ = 125C 2.0 1.6 0 50 2.8 RG = 56 VCE = 600 V VGE = 15 V TVJ = 125C 2 0 40 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 3 30 QG [nC] 1.2 40 Eoff Eon 60 80 100 120 RG [] Fig. 6 Typ. switching energy vs. gate resistance 20120131b 4-5 Advanced Technical Information 40 IXA 20PG1200DHGLB 5 TVJ = 125C VR = 600 V 30 4 40 A IF Qrr 20 [A] 3 20 A [C] TVJ = 125C 10 2 TVJ = 25C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/s] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125C 30 VR = 600 V 20 A 25 TVJ = 125C 600 VR = 600 V 500 10 A IRRM 20 [A] 15 trr 400 40 A [ns] 300 10 200 5 100 0 200 300 400 500 diF /dt [A/s] 600 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/s] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] [K/W] 0.6 0.1 10 A 0.4 0.2 200 300 400 500 diF /dt [A/s] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2012 IXYS All rights reserved 0.01 0.001 0.01 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance 20120131b 5-5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: IXA20PG1200DHGLB-TRR IXA20PG1200DHGLB