2005-12-201
BDP948, BDP950
123
4
PNP Silicon AF Power Transistors
• For AF driver and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BDP947, BDP949 (NPN)
Type Marking Pin Configuration Package
BDP948
BDP850 BDP948
BDP950 1=B
1=B 2=C
2=C 3=E
3=E 4=C
4=C -
--
-SOT223
SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BDP948
BDP950
VCEO
45
60
-
Collector-base voltage
BDP948
BDP950
VCBO
45
60
V
Emitter-base voltage VEBO 5
Collector current IC3 A
Peak collector current ICM 5
Base current IB200 mA
Peak base current IBM 500 mW
Total power dissipation-
TS ≤ 99 °C Ptot 3 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2005-12-202
BDP948, BDP950
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BDP948
IC = 10 mA, IB = 0 , BDP950
V(BR)CEO
45
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BDP948
IC = 100 µA, IE = 0 , BDP950
V(BR)CBO
45
60
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain1)
IC = 10 mA, VCE = 5 V
IC = 500 mA, VCE = 1 V
IC = 1 A, VCE = 2 V
hFE
25
85
50
-
-
-
-
475
-
-
Collector-emitter saturation voltage1)
IC = 2 A, IB = 0.2 A VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 2 A, IB = 0.2 A VBEsat - - 1.3
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz fT- 100 - MHz
Collector-base capacitance
VCB = 10 V, f = 100 MHz Ccb - 40 - pF
1Pulse test: t < 300µs; D < 2%
2005-12-203
BDP948, BDP950
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 0 10 1 10 2 10 3 10 4
mA
IC
1
10
2
10
3
10
-
hFE
100 °C
25 °C
-50 °C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
0 0.1 0.2 0.3 0.4 V0.6
VCEsat
0
10
1
10
2
10
3
10
4
10
mA
IC
100°C
25°C
-50°C
Base-emitter saturation voltage
IC = (VBEsat), hFE = 10
0 0.2 0.4 0.6 0.8 1 V1.3
VBEsat
0
10
1
10
2
10
3
10
4
10
mA
IC
-50°C
25°C
100°C
Collector current IC = ƒ(VBE)
VCE = 2 V
0 0.2 0.4 0.6 0.8 1 V1.3
VBE
0
10
1
10
2
10
3
10
4
10
mA
IC
-50°C
25°C
100°C
2005-12-204
BDP948, BDP950
Collector cutoff current ICBO = ƒ(TA)
VCB = 45 V
0 20 40 60 80 100 120 °C 150
TA
-1
10
0
10
1
10
2
10
3
10
4
10
5
10
nA
ICB0
max
typ
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
)
0
50
100
150
200
250
300
350
pF
425
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
0.4
0.8
1.2
1.6
2
2.4
W
3.2
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
2005-12-205
BDP948, BDP950
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
stp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2005-12-206
BDP948, BDP950
Package SOT223
Package Outline
Foot Print
Marking Layout
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Manufacturer
Date code
(Year/Calendarweek)
Type code
Example
2005, June
BCP52-16
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
2005-12-207
BDP948, BDP950
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
