GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
1
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Features
– 100V enhancement mode power switches
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Zero reverse recovery loss
– Source-sense for optimal high speed design
– RoHS 6 compliant
Applications
– 48V DC-DC conversion
– Telecom & Cloud Computing Systems
– Automotive Systems
– Energy Storage Systems
– AC-DC power supplies (secondary)
– VHF very small form-factor AC-DC Adapter
– Appliances and power tools
circuit symbol
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Symbol
Value
Unit
T
J
-55 to +150
°C
T
S
-55 to +150
°C
V
DS
100
V
VGS
-10 to + 7
V
VGS
± 10
V
(Note 1)
IDS(cont)25
90
A
IDS(cont)100
60
case
I
DS(pulse)25
135
(1) Limited by saturation
Thermal Characteristics (Typical values unless otherwise noted)
Parameter
Symbol
Value
Units
Thermal Resistance (junction to case)
RΘJC
0.55 °C /W
Thermal Resistance (junction to ambient) (Note 2)
RΘJA
55
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260 °C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
Ordering information
Part number
Package type
Ordering code
Packing method
GS61008P
GaN
PX
GS61008P-TR
Tape-and-reel
GS61008P
GaNPX
GS61008P-MR
Mini-reel
D
S
G
SS
D
SS
S
G
TP = thermal pad
TP
GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
2
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Electrical Characteristics (Typical values at TCASE= 25°C unless otherwise noted)
Parameters Symbol Value Units Conditions (Note 3)
Drain-to-Source Breakdown Voltage BVDSS 100 V
V
GS
= 0V
ID = 1mA
Drain-to-Source On Resistance (TJ = 25°C)
RDS(ON)
7.4 mΩ
V
GS
= 6V, T
J
= 25°C
ID = 25A
Drain-to-Source On Resistance (TJ = 150°C) 18.5 mΩ
V
GS
= 6V, T
J
= 150°C
I
D
=25A
Gate Threshold Voltage VGS(th) 1.6 V
V
DS
= V
GS
ID = 2mA
Drain to Source Leakage Current (TJ = 25°C)
IDSS
0.5 µA
V
DS
= 100V
VGS = 0V, TJ = 25°C
Drain to Source Leakage Current (TJ = 150°C) 100 µA
V
DS
= 100V
VGS = 0V, TJ = 150°C
Gate to Source Current IGS 200 µA VGS=6V, VDS=0V
Gate Resistance RG 1.5 Ω f=1MHz, open drain
Input Capacitance CISS 610
pF
VDS = 80V
VGS = 0V
f = 1MHz
Output Capacitance COSS 250
Reverse Transfer Capacitance CRSS 15
Effective Output Capacitance, Energy Related (Note 4) CO(ER) 293 pF
V
GS
=0V
VDS=0 to 80V
Effective Output Capacitance, Time Related (Note 5) CO(TR) 360 pF
I
D
=constant
VGS =0V
VDS=0 to 80V
Total Gate Charge QG(TOT) 12.0 nC
VGS=0 to 6V
VDS=50V
ID=27A
Gate-to-Source Charge QGS 2.0 nC
Gate-to -Drain Charge QGD 2.2 nC
Reverse Recovery Charge QRR 0 nC
Output Charge QOSS 21 nC
Gate plateau voltage Vplat 3.0 V VDS = 80V
Source-Drain Reverse Voltage VSD 0.15 V
V
GS
= 6V, T
J
= 25°C
ISD =9A
Source-Drain Reverse Voltage VSD 2.0 V
V
GS
= 0V, T
J
= 25°C
ISD =9A
(3) All parameters are specified with the substrate and thermal pad connected to the source
(4) Co(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS
(5) Co(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS
GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
3
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Figure 1: GS61008P typical I
DS
vs. V
DS
@ T
J
= 25 ⁰C
Figure 2: GS61008P typical I
DS
vs. V
DS
@ T
J
= 150 ⁰C
Figure 3: GS61008P typical R
DS(on)
vs. I
D
for V
GS
= 6 V @T
j
=25°C
Figure 4: GS61008P typical R
DS(on)
vs. I
D
for V
GS
= 6V @T
j
=150°C
GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
4
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Figure 5: GS61008P Safe Operating Area @ T
case
25 ⁰C
Figure 6: GS61008P temperature derating
Figure 7: GS61008P Transient Thermal Impedance
Figure 8 : GS61008P typical transfer characteristic I
D
vs. V
GS
GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
5
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Figure 9: GS61008P Reverse Conduction Characteristics
Figure 10 : GS61008P typical input, output and reverse
capacitance vs. VDS
Figure 11: GS61008P typical gate charge, Q
G
, vs. V
GS
@
VDS=50V
Figure 12: GS61008P Typical C
OSS
Stored Energy
GS61008P
100V enhancement mode GaN transistor
Preliminary Datasheet
GS61008P DS Rev 1509044
© 2009-2015 GaN Systems Inc.
6
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Package Dimensions
Recommended Minimum Footprint
www.gansystems.com North America
Europe
Asia
Important Notice
– Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized
or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal
injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN
Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All
other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject
to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses,
or any other intellectual property rights. GaN Systems standard terms and conditions apply.
© 2009-2015 GaN Systems Inc. All rights reserved.
Note: These pad sizes are the minimums recommended and should only be used as a guideline. Other factors, such as end-user
layout, specific application standards and thermal performance must be taken into consideration to define final footprints.
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
GaN Systems:
GS61008P-E05-TY GS61008P-E05-MR