GE TYPE JEDEC 2N681-92* ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION It(AMS Whiaw) Itsm Pe Vom Rese ty ty ty +t, di/dt Ty Max. RMS on-state current (A) Max. average on-state current @ 1 conduction (A) @ Tc (C) Max. peak one cycle, non-repetitive surge current {A) Vtfor 2 1.5 msec, (A? sec) on-state voltage @ c,1 rated (Vv) Max. internal thermal resistance, dc, Max. holding current @ C (mA) Typical turn-off time at rated Ty {max.) Typical turn-on time (usec) 3 -rise turned-on current 20 (A/jsec) Junction operating temperature range ("C) 40 to 100 BLOCKING dv/dt FIRING Typical critical rate-of-rise of off-state voltage, Exponential @ max. rated Ty (V/usec) lot Max. required gate current to trigger (mA) @ -65C @ 40C @ 25C Max. required gate voltage to trigger (VJ @-65C @ -40C @ 25C Vet Min. required gate voltage to trigger @ 100C @ 125C @ 150C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 25 C230/2U 50 C230/2F 100 C230/2A 150 _ 200 C230/28 250 - 300 C230/2C 400 C230/2D 500 C230/2E 600 C230/2M 700 - 800 _ 900 - 1000 1100 1200 PACKAGE OUTLINE NO. *JAN & JANTX types available, 140 2N3896-9 100-600 35 @ c 350 260 1.6 80 ~-65 to 125 2N3870 2N3871 7 2N3898 2N3899 2N5204-7 600-1200 35 @ c 1.6 150 ~40 to 125 2N5204 2N5205 2N5206 2N5207 1072N5204-07 The 2N5204-07 series of silicon controlled rectifiers are reverse blocking triode thyristor semiconductor devices for use in medium power switching and phase control applications requiring blocking voltage up to 1200 volts, and average load current (single-phase, 180 conduction angle) up to 22 amperes. General Electrics C137 SCR is recommended where a higher level of performance is required for a device of this size. MAXIMUM ALLOWABLE RATINGS 2N5204 600 Volts} 600 Voltst 720 Voltst 2N5205 800 Voltst 800 Volts} 960 Voltst 2N5206 1000 Volts} 1000 Volts} 1200 Voltst 2N5207 1200 Volts} 1200 Voltst 1440 Voltst (1) Values apply for gate terminal open-circuited. (Negative gate bias is permissible.) (2) Maximum case-to-ambient thermal resistance for which maximum VporRm and Vrrm fatings apply equals 5.0C per watt for full sine wave or full-wave rectified sinusoidal volatge waveform. (3.0C per watt is maximum case-to-ambient thermal resistance for pure dc voltage waveform.) (3) Half sine wave voltage pulse, 10 millisecond maximum duration, (4) di/dt rating is established in accordance with EIA Standard RS-397, Section 5.2.2.6. Off-state (blocking) voltage capability may be temporarily lost immediately after each current pulse for duration less than the period of the applied pulse repetition rate. The pulse repetition rate for this test is 400 Hz. The duration of the JEDEC di/dt test condition is 5.0 seconds (minimum). RMS On-State Current, Inna. ee ee ee nnn nent ten tenn nent e teens 35 Amperes (all conduction angles) Average On-State Current, Inay.. 0.0.00... 0c ccc cc eee te eens Depends on conduction angle (See Charts 3 and 5) Critical Rate-of-Rise of On-State Current, di/dt: (4) Gate triggered operation. .....0.0.0 000. een nee ee ee een eens (See Chart 6) Switching from 1200 volts...00 0... ee teen tte e nee tenes 75 Amperes per microsecondt 1000 Volts... ce en en eee ene eee eens 80 Amperes per microsecond} 800 Volts... cc nee tee ene e eee e eee 90 Amperes per microsecond} B00 Volts... cee ne nee een rennet eens 100 Amperes per microsecondt Breakover voltage triggered operation. ....... 0.00... cece cee eee eee ene ences 10 Amperes per microsecond Peak One Cycle Surge (non-rep) On-State Current, Irsm.. 0... cee eee ete n ene 300 Amperest I*t (for fusing), for time = 1.0 milliseconds (See Chart 9) ...--.---. eee cece eee etre eens 200 Ampere? seconds for time = 8.3 milliseconds (See Chart 9)......--- 2. cece eee cee te tte nee 375 Ampere? seconds Peak Gate Power Dissipation, Pem............ 0.0 ccc cece cece tet teen ete e neta e teen enne 60 Watts for 500 microseconds} Average Gate Power Dissipation, Pacyy.... 0.02 ccc ccc ce ene nn teen ened nen Eee eee dnd bee een ene ees 10 Watts} Peak Negative Gate Voltage, Vom... 0... c ccc cee et ee en E EOC Een ee eed een entree Eten ee 5 Volts+ Storage Temperature, Trg... 0.0. ce cee nee eee ene ene ete b eee ne eee ne eee eben bene eben 40C to +150Ct Operating Temperature, Ts........0 000 cc ccc cc eee ee ee eet ened eee n ee enn eben tebe eben bn eeeeae 40C to +125C} Maximum Stud Torque... ...... 0.0.0 oe ee EEE a Cee Ene EE een EEE EES 30 Lb-in (385 Kg-cm) +Indicates data included on JEDEC Type Number Registration. 4632N5204-07 CHARACTERISTICS Peak Off-State or Torn mA y= 40 to +125C Reverse Current ()() or Taxw 2N5204 3.3F Vous <= Varun = 600 Volts Peak 2N5205 2.57 800 2N5206 2.0T 1000 2N5207 - L.74 1200 D.C. Gate Trigger I + 40 mAde To = + 25C, Vn = 12 Vade, Ri = 12 ohms Current 80+ To = 40C, Vp = 12 Vdc, Ri 12 ohms D.C. Gate Trigger Ver 3.0 Vde Te = + 25C, Vv = 12 Vde, Ri = 12 ohms Voltage | 3.04, T. = 40C, Vp = 12 Vde, Ri = 12 ohms 0.25+ _ To= + 125C, Rated Voem, Ri = 1000 ohms Peak On-State Vew 2.3F Volts To = + 25C, Ivy = 70 A peak, 1 msec wide pulse. Voltage Duty cycle = 2%. Holding Current Tu mAdc Anode supply = 24 Vde, Gate supply == 10 V, 20 ohms. Initial Forward Current Pulse = 0.5 A, 0.1 to 10.0 msec. wide. 100 To = 425C 200+ Tc = 40C Critical Rate of Rise | dv/dt 1007 Volts/ysec [Tc = +125C, Rated Vorm, Gate open circuited. of Forward Blocking Voltage. (Higher values may cause device switching. ) Thermal Resistance Os-c 1.5+ C/watt jJunction-to-case, de (1) Values apply for gate terminal open-circuited. (Negative gate bias is permissible.) (2) Maximum case-to-ambient thermal resistance for which maximum VprM and VrroM ratings apply equals 5.0C per watt for full sine wave or full-wave rectified sinusvidal voltage waveform. (3.0C per watt is maximum case-to-ambient thermal] resistance for pure de voltage waveform.) +Indicates data included on JEDEC Type Number Registration. OUTLINE DRAWING NOTES: (COMPLIES WITH JEDEC TO-48) 1. Complete threads to extend within 2/2 threads of seating plane. Diameter of unthreaded portion. 249 (6.32MM) Maxi- mum, .220 (5.59MM) Mini- mum. 2. Angular orientation of these terminals is undefined. ty ot 3. 4-28 UNF-2A. Maximum pitch $b, diameter of plated threads SEE NOTES shall be basic pitch diameter 3,485 J, t 2268 (5.76MM), minimum a. SEE NOTES. iss 2 a6 pitch diameter .2225 (5.66MM), reference: screw thread standards for Federal ~ - (i Service 1957, Handbook H28, )- eae 1957, PI. $M Le 4. A chamfer (or undercut) on _ [ $t FF one or both ends of hexa- . . . H b-F, gonal portions is optional. 5. Case is anode connection. 6. Large terminal is cathode con- N +e A 4 nection. SEE ages 7. Small terminal is gate connec- }e Ji yee . SEATING tion. PLANE }-+ 8. Insulating kit available upon TO request. A. Y4-28 steel nut, Ni. plated, -178 min. thk. B. Ext. tooth lockwasher, steel, Ni. plated, .023 min. thk. 464INSTANTANEOUS ONSTATE CURRENT AMPERES 1. MAXIMUM ALLOWABLE CASE TEMPERATURE C 1000 TEMPERATURE= 25C joo 0 ! 2 3 4 5 6 INSTANTANEOUS ON-STATE VOLTAGE VOLTS MAXIMUM ON-STATE CHARACTERISTICS 130 NOTES 120 t. RESISTIVE OR INDUCTIVE LOAD, 50 TO 400Hz. 2. CURVES APPLY FOR ANODE CURRENT RATE OF RISE= 0 10 AMPERES PER MICROSECOND MAXIMUM. 3. RATINGS DERIVED FOR ILO WATT AVERAGE GATE 100 POWER DISSIPATION. TO AMBIENT. 30 80 70 60 50 40 30 20 4 8 2 16 20 24 28 32 AVERAGE ON-STATE CURRENT AMPERES 4,.5C PER WATT MAXIMUM THERMAL RESISTANCE, CASE 3. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR HALF-WAVE RECTIFIED SINE WAVE OF CURRENT 465 2. 2N5204-07 70 oc 60 180 50 1p0* Vi \ 120 CONDUCTION ANGLE 30 (f, 40 + + | | so JY CONDUCTION y 30 ANGLE:30 A f/f fff A / \/ NOTES / 1, JUNCTION TEMPERATURE= 125C. L 2. FREQUENCY = 50 TO 400 Hz. 3. CURVES APPLY FOR ANODE CURRENT RATE OF RISE* 10 IOAMPERES PER MiCRO-__, SECOND MAXIMUM. |__| Q 4 8 12 16 20 24 2a 32 36 AVERAGE ON~ STATE CURRENT AMPERES 20 AVERAGE ON-STATE POWER DISSIPATION WATTS MAXIMUM ON-STATE POWER DISSIPATION FOR HALF-WAVE RECTIFIED SINE WAVE OF CURRENT AVERAGE ON-STATE POWER DISSIPATION WATTS 60 50 } 7] 33% ol +1 J , 50% t % OUTY CYCLE = Avie) DUTY CYCLE, = 8.3% f 30 / Vy - / by, Y, NOTES. |. JUNCTION TEMPERATURE?!25C . 2. FREQUENCY = 50 TO 400 Hz. 10 3. CURVES APPLY FOR ANODE CURRENT y RATE OF RISE =IO AMPERES PER MICROSECOND MAXIMUM . Oo 4 8 12 16 20 24 28 AVERAGE ON-STATE CURRENT AMPERES 4. MAXIMUM ON-STATE POWER DISSIPATION FOR RECTANGULAR CURRENT WAVEFORM3 3 90 80 70 60 50 40 30 20 MAXIMUM ALLOWABLE CASE TEMPERATURE C Faces! | | oT TT | |, FREQUENCY =50 TO 400 Hz. v 2. CURVES APPLY FOR ANODE CURRENT RATE OF RISE *10 AMPERES PER MICROSECOND MAXIMUM. + SS 3. RATINGS DERIVED FOR !.0 WATT AVERAGE GATE N wn POWER DISSIPATION. _ N WN 4. 5 C PER WATT MAXIMUM THERMAL RESISTANCE, iN ANAS. CASE -TO-AMBIENT . \ NON N \ K KY \ mi N \ \ N NN DUTY CYCLE = 8.3% 187% 25%) 33) son VA L 4 T + % puty cyciE {1 (100) | t 1 J _ 4 8 i2 16 20 24 28 32 36 AVERAGE ON-STATE CURRENT AMPERES 5. MAXIMUM ALLOWABLE CASE TEMPERATURE FOR RECTANGULAR CURRENT WAVEFORM 3 a T oo es T NOTES @ 9 3 a Q 5 1 Y*400Hz MAXIMUM 2. CASE TEMPERATURE -40C TO Py 3 apa +125C 3. REQUIRED GATE DRIVE:10 VOLTS, y Q 6 20 OHM SOURCE ,1.5 MICRO-~ SECONDS PULSE WIOTH MINIMUM,| X\ O1 MICROSECOND RISE TIME = MAXIMUM. 4. INSTANTANEOUS VALUE OF ON 3 S STATE CURRENT MUST NEVER EXCEED TURN-ON CURRENT UMIT LINES SHOWN. 5. di/ dt RATING IS ESTABLISHED IN ACCORDANCE WITH JEDEC @ 3 SUGGESTED STANDARD NO. 7, SECTION 5.1.2.4. OFF-STATE a (BLOCKING) VOLTAGE CAPAB ILITY MAY BE TEMPORARILY + 3 bot LOST AFTER EACH CURRENT PULSE FOR DURATIONS LESS MAXIMUM ALLOWABLE PEAK ONSTATE CURRENT AMPERES nN o THAN THE PERICO OF THE APPLIED PULSE REPETITION RATE. THE PULSE REPETITION | RATE FOR THIS TEST iS 400Hz. THE DURATION OF THE JEDEC di/dt TEST CONDITION IS 5.0 SECONDS MINIMUM. 1 Lo) fa F to e i = 40 a dud a o 1.0 ! 3 04 ZA) curve DEFINES TEMPERATURE RISE OF Z ____s JUNCTION ABOVE CASE TEMP. FOR SINGLE Oo NOTES: LOAD PULSE OF DURATION t. PEAK ALLOW- ww ABLE DISSIPATION IN THYRISTOR,FOR TIME t, = STARTING FROM CASE TEMP.,,EQUALS 125C = ol (MAX. T,) MINUS CASE TEMP. DIVIDED BY THE 2 TRANSIENT THERMAL IMPEDANCE: = 0.04 p _ 125C -Teo wi PEAK @y- (1) xr (2) FOR OPTIMUM RATINGS AND FURTHER INFORMATION SEE PUB. # F 200.9 ENTITLED "POWER SEMICONDUCTOR RATINGS UNDER oot TRANSIENT AND INTERMITTENT LOADS". : i | 0.001 0.004 001 0.04 Ol 04 = 10 40 10 40 100 TIME (t)- SECONDS 7. MAXIMUM TRANSIENT THERMAL !MPEDANCE, JUNCTION-TO-CASE ; 300 5 a ws & 250 P 5 i Mane! 2 rss < 200 PN o = a9 Ps wi 150 zs r Ba 2 100 a NOTE oe JUNCTION TEMPERATURE IMMEDIATELY a PRIOR TO SURGE = 40C TO+ 125C x 50 bn 4 < FT} a o 2 4 6 8 10 20 40 60 80 100 CYCLES AT 6O Hz 8. MAXIMUM ALLOWABLE SURGE (NON-REPETITIVE) ON-STATE CURRENT 466 IN O4 06 08 1.0 2 4 6 8 10 20 a0 60 80100 TIME FROM START OF CURRENT FLOW MICROSECONDS 6. TURN-ON CURRENT LIMIT 12t-AMPERE2 SECONDS 500 400 300 (RMS) 250 200 SINE WAVE FOR OF 700 600 Lt {tty FOR HALF SINE WAVE wl soo OF CURRENT 5 J NOTES: honed ww 4O0F 1, THIS OVERLOAD MAY 2% BE APPLIED FOLLOWING 3 DEVICE OPERATION AT ANY md Pa 300; VOLTAGE OR CURRENT WITHIN ITS 2 | STEADY STATE RATING LIMITS. @ & 2507 2. THE OVERLOAD MAY NOT BE REPEATED UNTIL te DEVICE JUNCTION TEMPERATURE HAS COOLED fae 2007 DOWN TO WITHIN STEADY-STATE RATED VALUE. 4 3 3. NO BLOCKING VOLTAGE RATING IS IMPLIED DURING z OR IMMEDIATELY FOLLOWING THE OVERLOAD 150k CURRENT INTERVAL . 4 z 4. JUNCTION TEMPERATURE IMMEDIATELY PRIOR TO Ww OVERLOAD=40 TO +125C. 1 1 1 | 1 L jj ot a 1A. 100) 1S 2 25 3 4 5 6 789310 PULSE BASE WIDTH MILLISECONDS MAXIMUM ALLOWABLE SUB-CYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND FT RATING