MITSUBISHI Nch POWER MOSFET FS12VS-5 HIGH-SPEED SWITCHING USE FS12VS-5 OUTLINE DRAWING Dimensions in mm a LLLSMAX. 05 98 + 0. 3 < 1 Ia 1 8. 8 _ GATE 12) DRAIN 2) SOURCE @ DRAIN Ag TO-220S APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (ec = 25C) Parameter Vpss Drain-source Gate-source Io Drain current Drain current Pb Maximum Teh Channel T. Conditions. 250 +30 12 36 100 55 ~ +150 -5 ~ +150 1.2 2-42 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS12VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (tch = 25C) Symbot Pararneter Test conditions ~ Limits Unit Min. Typ. Max. VR} DSS | Drain-source breakdown voltage | lo = 1mA, Vas = 0V 250 _ _ 4 V (BR) GSS | Gate-source breakdown voltage | IG = +100uA,; Vos = OV +30 Vv iass Gate leakage current V@s = +25V, Vps = OV _ _ +10 yA loss Drain current Vos = 250V, Vas = 0V _ 1 mA VGS {th} Gate-source threshoid voltage lo= ImA, Vos = 10V 2 3 4 Vv FDS (ON} Drain-source on-state resistance | lO = 6A, Vas = 10V 0.32 0.40 ~Q VDS{ON) | Drain-source on-state voltage | 1D = GA, Vas = 10V _ 1.90 2.40 v | yts | Forward transfer admittance | ID = 6A, VDS = 10V 5.0 75 Ss Ciss Input capacitance _ 720 = pF Coss Output capacitance Vbds = 25V, VGS = OV, f = IMHz 150 _ pF Crss Reverse transfer capacitance _ 30 _ pF td (on) Tum-on delay time _ 18 _ ns tr Rise time 35 _ ns - Von = 150V, ip = 6A, Vas = 10V, RGEN = RAGs = 50Q td (off) Turn-off delay time _ 80 _ ns tt Fall time _ 40 _ ns Vsb Source-drain voltage Is = GA, Vas = OV _ 15 2.0 Vv Rit (ch-c) | Thermal resistance Channel to case _ 1.25 CAN PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 o 3 twe1 = 2 oo 160 Zao i a 10) z 5 9 120 5 3 ke i < wo 2 a Z B80 3% cc z 3 w = 3 zs 40 a 2e Tc = 25 & 10-7 5 50 400 150 200 409 23 5710' 23 57102 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) i TC = 25C Pulse Test 'Pp = 100W Poy _ <= VGS = 20V < a ' wa) 10V a i ik b G \ Gi & [og s 3 3 z z = & a BY 5V 0 - 0 a 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2-43 ELECTRICON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C Ww Pulse T. we be Ea <S <i be ES Oe 26 zo Zo 2 0 a o> Ow f& oO Du DS eg O< va = n F Za z% <& <p x Cer Oo a 0 0 4 8 42 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) Tc = 26C Vos = 50V => Test < xa 2 a t z2> a Ey s 22 3 <E 3 3 & Lt % 4 8 42 16 20 GATE-SOURCE VOLTAGE Vas (V} CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 _ c ? & w Oo 10 Ww ze = <6 5 - mans 3 g og 3 Zz a0 = Sg 102 Q Oo 5 = 3h Tch = 25C 2Ef = MHz = OV 10 1 3.57100 23 67101 23 5710? 23 DRAIN-SOURCE VOLTAGE Vops (V) MITSUBISHI Nch POWER MOSFET FS12VS-5 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) Tc = 25C Pulse Test 0 10-123 5710923 57101 23 57102 DRAIN CURRENT ip (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10) 7 5 3 2 10 7 5 3 2 Vos = 10V Pulse Test 10-71 100 2 302=5 7:10) 23 8 7104 DRAIN CURRENT ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 Toh = 25C Vop = 150V 5 VGs = 10V = RGS = 500 3 2 102 7 5 3 2 101 a joo 62 30 55 7 10! 23 5 7 10 DRAIN CURRENT [0 (A) 2-44 ate MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE 1s (ON) (1C) DRAIN-SOURCE ON-STATE RESISTANCE ros (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V ary pss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (pr) pSs (25C) GATE-SOURCE VOLTAGE Vas (V) 20 16 191 yw Os 100 Nw os 10! 04 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Toh = 23C 0 8 16 24 32 40 GATE CHARGE Qg (nC} ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 10V Ip = 1/2ID Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGsS = OV lo = 1mA 50 0 50 100 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) 101 SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE Vas thy (V) MITSUBISHI Nch POWER MOSFET FS12VS-5 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Ves = OV C=1265C Ne 32 24 0 0 0.8 1.6 2.4 3.2 40 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VbS = 10V iD= 1mMA 4.0 3.0 2.0 -50 Q 50 190 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Pom ae Cl =e Ds v 10423 5710323 5710223 5710-123 5710023 5710! 23 57102 PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 2 - 45