Hermetic Infrared Emitting
Diode
OP215, OP216
© TT electronics plc Issue B 07/2016 Page 1
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Description:
Each OP215 and OP216 device is an 890 nm gallium aluminum arsenide infrared eming diode (GaAIAs), mounted in a
hermecally sealed “pig tale” package with an enhanced temperature range and a narrow irradiance paern that provides
high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at
equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size
permits high device density mounng.
The OP216 series devices provide an addional mounng tab connected to the Cathode/Case.
All these LEDs are mechanically and spectrally matched to the OP300 series, OP516, OP600 series and OP640 series devices.
Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data, and to
ApplicaƟon BulleƟn 202 for pill-type soldering to PCBoard.
Applications:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor
Features:
• Hermetically sealed package
• Mechanically and spectrally matched to other OPTEK devices
• Designed for direct mount to PCBoard
• Enhanced temperature range
• Excellent coupling efficiency
OP215
OP216
Ordering Information
Part
Number
LED Peak
Wavelength
Total Beam
Angle
OP215A OP216A
890 mm
OP215B OP216B
OP215C OP216C
OP215D OP216D
24°
Optical Power mW/
cm2 (Min)
1.20
0.60
0.30
0.20
1
2
Pin # LED
1 Anode
2 Cathode
RoHS
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Hermetic Infrared Emitting
Diode
OP215, OP216
Issue B 07/2016 Page 2
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range -65o C to +150o C
Operating Temperature Range -65o C to +125o C
Reverse Voltage 2.0 V
Continuous Forward Current 100 mA
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260° C(1)(2)
Power Dissipation 150 mW(3)
Peak Forward Current (2μs pulse with 0.1% duty cycle) 1.0 A
Electrical Specifications
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Input Diode
EE (APT)(3)
Apertured Radiant Incidence
OP216A
OP216B
OP216C
OP216D
1.20
0.60
0.30
0.20
- -
mW/cm2 IF = 50 mA(4)
VF Forward Voltage - - 1.80 V IF = 50 mA
IR Reverse Current - - 100 μA VR= 2.0 V
P Wavelength at Peak Emission - 890 - nm IF = 10 mA
B Spectral Bandwidth between
Half Power Points - 80 - nm IF = 10 mA
Δ /ΔT Spectral Shift with Temperature - +0.18 - nm/°C IF = Constant
HP Emission Angle at Half Power Points
- 24
- Degree IF = 50 mA
tr Output Rise Time - 500 - ns
tf Output Fall Time - 250 - ns
IF(PK)=100 mA, PW=10 μs, and
D.C.=10.0%
Notes:
1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices.
2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
3. Derate linearly 1.50 mW/° C above 25° C.
4. For OP216, EE(APT) is a measurement using a 0.180” (4.57 mm) diameter apertured sensor placed 0.653” (16.59 mm) from the lens tip. EE(APT) is not
necessarily uniform within the measured area.
© TT electronics plc
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Hermetic Infrared Emitting
Diode
OP215, OP216
Issue B 07/2016 Page 3
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Performance
OP215 & OP216
Forward Voltage vs Forward Current vs
Temperature
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0 5 10 15 20 25 30 35 40 45 50
Forward Current (mA)
Typical Forward Voltage (V)
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
Optical Power vs I
F
vs Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 5 10 15 20 25 30 35 40 45 50
Forward Current I
F
(mA)
Normalized Optical Power
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120° C
Normalized at 50 mA and 20° C
Distance vs Output Power vs Forward Current
0
1
2
3
4
5
6
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
Normalized Output Power
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
90 mA
100 mA
Normalized at 1" and 50 m
A
Forward Current
Normalized Intensity vs Beam Angle
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
-45 -35 -25 -15 -5 5 15 25 35 45
Normalized Intensity
Angular Displacement (° Degrees)
