LM136A-2.5/LM136-2.5QML Reference Diode General Description Features The LM136A-2.5/LM136-2.5 integrated circuit is a precision 2.5V shunt regulator diode. This monolithic IC voltage reference operates as a low-temperature-coefficient 2.5V zener with 0.2 dynamic impedance. A third terminal on the LM136-2.5 allows the reference voltage and temperature coefficient to be trimmed easily. The LM136-2.5 is useful as a precision 2.5V low voltage reference for digital voltmeters, power supplies or op amp circuitry. The 2.5V make it convenient to obtain a stable reference from 5V logic supplies. Further, since the LM136-2.5 operates as a shunt regulator, it can be used as either a positive or negative voltage reference. Available with radiation guarantee 100 krad(Si) -- Total Ionizing Dose Low temperature coefficient Wide operating current of 400 A to 10 mA Guaranteed temperature stability Easily trimmed for minimum temperature drift Fast turn-on 3-lead transistor package Ordering Information NS Part Number SMD Part Number NS Package Number LM136H-2.5/883 LM136AH-2.5-SMD 8418003XA LM136AH-2.5/883 Package Description H03H T0-46, 3LD Metal Can H03H T0-46, 3LD Metal Can H03H T0-46, 3LD Metal Can LM136AH-2.5RQV (Note 5) 5962R0050101VXA 100 krad(Si) H03H T0-46, 3LD Metal Can LM136AH-2.5RLQV (Note 6) 5962R0050102VXA 100 krad(Si) H03H T0-46, 3LD Metal Can Connection Diagram TO-46 Metal Can Package 20139720 Bottom View See NS Package Number H03H (c) 2007 National Semiconductor Corporation 201397 www.national.com LM136A-2.5/LM136-2.5QML Reference Diode July 2007 LM136A-2.5/LM136-2.5QML Schematic Diagram 20139701 www.national.com 2 LM136A-2.5/LM136-2.5QML Typical Applications Adjust 2.5V Reference *Any to 2.490V silicon signal diode Wide Input Range Reference 20139709 2.5V Reference with Minimum Temperature Coefficient 20139711 20139710 3 www.national.com LM136A-2.5/LM136-2.5QML Absolute Maximum Ratings (Note 1) Reverse Current Forward Current Storage Temperature 15 mA 10 mA -60C TA +150C -55C TA +125C +150C 300C Operating Temperature Range (Note 2) Maximum Junction Temperature (TJ)(Note 2) Lead Temperature (Soldering 10 seconds) Thermal Resistance JA Still Air Flow 500LF/Min Air Flow 354C/W 77C/W 46C/W JC ESD Rating (Note 3) 1,000V Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A Subgroup Description TempC 1 Static tests at 25 2 Static tests at 125 3 Static tests at -55 4 Dynamic tests at 25 5 Dynamic tests at 125 6 Dynamic tests at -55 7 Functional tests at 25 8A Functional tests at 125 8B Functional tests at -55 9 Switching tests at 25 10 Switching tests at 125 11 Switching tests at -55 12 Settling time at 25 13 Settling time at 125 14 Settling time at -55 LM136-2.5 Electrical Characteristics DC Parameters The following conditions apply, unless otherwise specified. Symbol Parameter IR = 1mA Conditions IAdj Adjust Current VAdj = 0.7V Delta VZ Delta Zener Voltage 0.4mA IZ 10 mA VZ Zener Voltage Notes VAdj = Open VAdj = 0.7V VAdj = 1.9V ZRD Reverse Dynamic Impedance VStab Temperature Stability www.national.com (Note 4) VZ = Adjusted to 2.490V 4 Min Max Unit Subgroups -125 +125 A 1, 2, 3 6.0 mV 1 10 mV 2, 3 2.44 2.54 V 1 2.42 2.56 V 2, 3 2.39 2.49 V 1 2.29 2.49 V 2, 3 2.49 2.69 V 1, 2, 3 1.0 1, 2, 3 18 mV 2, 3 DC Parameters The following conditions apply, unless otherwise specified. Symbol Parameter IR = 1mA Conditions IAdj Adjust Current VAdj = 0.7V Delta VZ Delta Zener Voltage 0.4mA IZ 10 mA VZ Zener Voltage Notes VAdj = Open VAdj = 0.7V VAdj = 1.9V ZRD Reverse Dynamic Impedance VStab Temperature Stability Min Max Unit Subgroups -125 +125 A 1, 2, 3 6.0 mV 1 10 mV 2, 3 2.465 2.515 V 1 2.44 2.54 V 2, 3 2.39 2.49 V 1 2.29 2.49 V 2, 3 2.49 2.69 V 1, 2, 3 (Note 4) 0.6 1 (Note 4) 1.0 mV 2, 3 18 Min Max Unit Subgroups VAdj = Open -10 +10 mV 1 VAdj = 0.7V -10 +10 mV 1 VAdj = 1.9V -10 +10 mV 1 VZ = Adjusted to 2.490V 2, 3 DC Drift Parameters Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Symbol VZ Parameter Zener Voltage Conditions Notes Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), JA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/ JA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 3: Human body model, 1.5K in series with 100pF. Note 4: Parameter tested go-no-go only. Note 5: Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in Mil-Std-883, Method 1019. Note 6: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS) effect. 5 www.national.com LM136A-2.5/LM136-2.5QML LM136A-2.5 Electrical Characteristics LM136A-2.5/LM136-2.5QML Typical Performance Characteristics Reverse Voltage Change Zener Noise Voltage 20139722 20139721 Response Time Dynamic Impedance 20139724 20139723 Reverse Characteristics Forward Characteristics 20139725 www.national.com 20139726 6 LM136A-2.5/LM136-2.5QML Temperature Drift 20139728 FIGURE 1. LM136 With Pot for Adjustment of Breakdown Voltage (Trim Range = 120 mV typical) 20139727 Application Hints The LM136 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 1 shows an LM136 with a 10k potentiometer for adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, two diodes can be added in series with the adjustment potentiometer as shown in Figure 2. When the device is adjusted to 2.490V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as the LM136. It is usually sufficient to mount the diodes near the LM136 on the printed circuit board. The absolute resistance of R1 is not critical and any value from 2k to 20k will work. 20139729 FIGURE 2. Temperature Coefficient Adjustment (Trim Range = 70 mV typical) Low Cost 2 Amp Switching Regulator 20139705 *L1 60 turns #16 wire on Arnold Core A-254168-2 Efficiency 80% 7 www.national.com LM136A-2.5/LM136-2.5QML Precision Power Regulator with Low Temperature Coefficient 20139713 5V Crowbar Trimmed 2.5V Reference with Temperature Coefficient Independent of Breakdown Voltage 20139715 *Does not affect temperature coefficient 20139714 Adjustable Shunt Regulator 20139706 www.national.com 8 LM136A-2.5/LM136-2.5QML Linear Ohmmeter 20139716 Op Amp with Output Clamped Bipolar Output Reference 20139717 20139718 9 www.national.com LM136A-2.5/LM136-2.5QML 2.5V Square Wave Calibrator Low Noise Buffered Reference 20139719 20139731 5V Buffered Reference 20139730 www.national.com 10 Date Released Revision 07/06/07 A Section New Release, Corporate format 11 Originator Changes L. Lytle 2 MDS datasheets converted into one corporate datasheet format. MNLM136-2.5-X Rev 0A0 and MNLM136A-2.5-X-RH. The ELDRS Part has also been added. Rev. 0E0 will be archived. www.national.com LM136A-2.5/LM136-2.5QML Revision History LM136A-2.5/LM136-2.5QML Reference Diode Physical Dimensions inches (millimeters) unless otherwise noted NS Package Number H03H THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION ("NATIONAL") PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS, IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL'S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. 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