S-5712A/B/C Series www.ablic.com LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 (c) ABLIC Inc., 2010-2019 This IC, developed by CMOS technology, is a high-accuracy Hall effect switch IC that operates at a low voltage and low current consumption. The output voltage changes when this IC detects the intensity level of magnetic flux density. Using this IC with a magnet makes it possible to detect the open / close in various devices. High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A package. Due to its low voltage operation and low current consumption, this IC is suitable for battery-operated portable devices. Also, due to its high-accuracy magnetic characteristics, this IC can make operation's dispersion in the system combined with magnet smaller. ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetic simulation service, contact our sales office. Features * Pole detection*1: * Output logic*1: * Output form*1: * Magnetic sensitivity*1: *1 * Operating cycle (current consumption) : * Power supply voltage range: * Operation temperature range: * Lead-free (Sn 100%), halogen-free Detection of omnipolar, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output BOP = 1.8 mT typ. BOP = 3.0 mT typ. BOP = 4.5 mT typ. BOP = 7.0 mT typ. Product with omnipolar detection tCYCLE = 5.70 ms (IDD = 12.0 A) typ. tCYCLE = 50.50 ms (IDD = 2.0 A) typ. tCYCLE = 204.10 ms (IDD = 1.0 A) typ. Product with S pole or N pole detection tCYCLE = 6.05 ms (IDD = 6.0 A) typ. tCYCLE = 50.85 ms (IDD = 1.4 A) typ. tCYCLE = 204.05 ms (IDD = 1.0 A) typ. VDD = 1.6 V to 3.5 V Ta = -40C to +85C *1. The option can be selected. Applications * Mobile phone, smart phone * Notebook PC, tablet PC * Digital video camera * Plaything, portable game * Home appliance Packages * SOT-23-3 * SNT-4A 1 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Block Diagrams 1. Nch open-drain output product VDD OUT Sleep / Awake logic *1 *1 Chopping stabilized amplifier VSS *1. Parasitic diode Figure 1 2. CMOS output product VDD Sleep / Awake logic *1 *1 OUT Chopping stabilized amplifier VSS *1. Parasitic diode Figure 2 2 *1 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Product Name Structure 1. Product name S-5712 x x x x x - xxxx U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and packing specifications*1 M3T1: SOT-23-3, Tape I4T1: SNT-4A, Tape Magnetic sensitivity 0: BOP = 1.8 mT typ. 1: BOP = 3.0 mT typ. 2: BOP = 4.5 mT typ. 3: BOP = 7.0 mT typ. Output logic L: Active "L" H: Active "H" Pole detection D: Detection of omnipolar S: Detection of S pole N: Detection of N pole Output form N: Nch open-drain output C: CMOS output Operating cycle A: tCYCLE = 50.50 ms typ. (Product with omnipolar detection) tCYCLE = 50.85 ms typ. (Product with S pole or N pole detection) B: tCYCLE = 204.10 ms typ. (Product with omnipolar detection) tCYCLE = 204.05 ms typ. (Product with S pole or N pole detection) C: tCYCLE = 5.70 ms typ. (Product with omnipolar detection) tCYCLE = 6.05 ms typ. (Product with S pole or N pole detection) *1. Refer to the tape drawing. 2. Packages Table 1 Package Drawing Codes Package Name SOT-23-3 SNT-4A Dimension MP003-C-P-SD PF004-A-P-SD Tape MP003-C-C-SD PF004-A-C-SD Reel MP003-Z-R-SD PF004-A-R-SD Land - PF004-A-L-SD 3 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. Product name list 3. 1 SOT-23-3 3. 1. 1 Nch open-drain output product Table 2 Magnetic Sensitivity (BOP) Product Name Operating Cycle (tCYCLE) S-5712ANDL0-M3T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 1.8 mT typ. S-5712ANDL1-M3T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 3.0 mT typ. S-5712ANDL2-M3T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 4.5 mT typ. S-5712ANSL1-M3T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ. S-5712ANSL2-M3T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 4.5 mT typ. S-5712ANSH1-M3T1U 50.85 ms typ. Nch open-drain output S pole Active "H" 3.0 mT typ. Output Form Pole Detection Output Logic S-5712BNDL2-M3T1U 204.10 ms typ. Nch open-drain output Omnipolar Active "L" 4.5 mT typ. S-5712BNDH2-M3T1U 204.10 ms typ. Nch open-drain output Omnipolar Active "H" 4.5 mT typ. Remark Please contact our sales office for products other than the above. 3. 1. 2 CMOS output product Table 3 Magnetic Sensitivity (BOP) Product Name Operating Cycle (tCYCLE) S-5712ACDL1-M3T1U 50.50 ms typ. CMOS output Omnipolar Active "L" S-5712ACDL2-M3T1U 50.50 ms typ. CMOS output Omnipolar Active "L" 4.5 mT typ. S-5712ACDH1-M3T1U 50.50 ms typ. CMOS output Omnipolar Active "H" 3.0 mT typ. Output Form Pole Detection Output Logic 3.0 mT typ. S-5712ACDH2-M3T1U 50.50 ms typ. CMOS output Omnipolar Active "H" 4.5 mT typ. S-5712ACSL1-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ. S-5712ACSL2-M3T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ. S-5712ACNL1-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ. S-5712ACNL2-M3T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ. S-5712CCDL1-M3T1U 5.70 ms typ. CMOS output Omnipolar Active "L" 3.0 mT typ. S-5712CCSL1-M3T1U 6.05 ms typ. CMOS output S pole Active "L" 3.0 mT typ. Remark Please contact our sales office for products other than the above. 4 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. 2 SNT-4A 3. 2. 1 Nch open-drain output product Table 4 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Output Logic Magnetic Sensitivity (BOP) S-5712ANDL0-I4T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 1.8 mT typ. S-5712ANDL1-I4T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 3.0 mT typ. S-5712ANDL2-I4T1U 50.50 ms typ. Nch open-drain output Omnipolar Active "L" 4.5 mT typ. S-5712ANSL1-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 3.0 mT typ. S-5712ANSL2-I4T1U 50.85 ms typ. Nch open-drain output S pole Active "L" 4.5 mT typ. S-5712BNDL2-I4T1U 204.10 ms typ. Nch open-drain output Omnipolar Active "L" 4.5 mT typ. S-5712BNDH2-I4T1U 204.10 ms typ. Nch open-drain output Omnipolar Active "H" 4.5 mT typ. Remark Please contact our sales office for products other than the above. 3. 2. 2 CMOS output product Table 5 Product Name Operating Cycle (tCYCLE) Output Form Pole Detection Output Logic Magnetic Sensitivity (BOP) S-5712ACDL0-I4T1U 50.50 ms typ. CMOS output Omnipolar Active "L" 1.8 mT typ. S-5712ACDL1-I4T1U 50.50 ms typ. CMOS output Omnipolar Active "L" 3.0 mT typ. S-5712ACDL2-I4T1U 50.50 ms typ. CMOS output Omnipolar Active "L" 4.5 mT typ. S-5712ACDL3-I4T1U 50.50 ms typ. CMOS output Omnipolar Active "L" 7.0 mT typ. S-5712ACDH1-I4T1U 50.50 ms typ. CMOS output Omnipolar Active "H" 3.0 mT typ. S-5712ACDH2-I4T1U CMOS output Omnipolar Active "H" 4.5 mT typ. S-5712ACSL1-I4T1U 50.50 ms typ. 50.85 ms typ. CMOS output S pole Active "L" 3.0 mT typ. S-5712ACSL2-I4T1U 50.85 ms typ. CMOS output S pole Active "L" 4.5 mT typ. S-5712ACSH1-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 3.0 mT typ. S-5712ACSH2-I4T1U 50.85 ms typ. CMOS output S pole Active "H" 4.5 mT typ. S-5712ACNL1-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 3.0 mT typ. S-5712ACNL2-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 4.5 mT typ. S-5712ACNL3-I4T1U 50.85 ms typ. CMOS output N pole Active "L" 7.0 mT typ. S-5712ACNH1-I4T1U CMOS output N pole Active "H" 3.0 mT typ. S-5712BCDL1-I4T1U 50.85 ms typ. 204.10 ms typ. CMOS output Omnipolar Active "L" 3.0 mT typ. S-5712BCDL2-I4T1U 204.10 ms typ. CMOS output Omnipolar Active "L" 4.5 mT typ. S-5712BCDH1-I4T1U 204.10 ms typ. CMOS output Omnipolar Active "H" 3.0 mT typ. S-5712BCDH2-I4T1U 204.10 ms typ. CMOS output Omnipolar Active "H" 4.5 mT typ. S-5712BCSL2-I4T1U 204.05 ms typ. CMOS output S pole Active "L" 4.5 mT typ. S-5712CCDL1-I4T1U 5.70 ms typ. CMOS output Omnipolar Active "L" 3.0 mT typ. S-5712CCDH1-I4T1U 5.70 ms typ. CMOS output Omnipolar Active "H" 3.0 mT typ. S-5712CCSL1-I4T1U 6.05 ms typ. CMOS output S pole Active "L" 3.0 mT typ. S-5712CCNL1-I4T1U 6.05 ms typ. CMOS output N pole Active "L" 3.0 mT typ. Remark Please contact our sales office for products other than the above. 5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Pin Configurations 1. SOT-23-3 Table 6 Top view Pin No. 1 2 Symbol Pin Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin 3 Figure 3 2. SNT-4A Table 7 Top view 1 2 4 3 Figure 4 Pin No. Symbol 1 VDD Power supply pin 2 VSS GND pin 3 *1 NC No connection 4 OUT Output pin *1. The NC pin is electrically open. The NC pin can be connected to the VDD pin or the VSS pin. 6 Pin Description LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Absolute Maximum Ratings Table 8 Item Symbol Power supply voltage VDD Output current IOUT Nch open-drain output product Output voltage VOUT (Ta = +25C unless otherwise specified) Absolute Maximum Rating Unit VSS - 0.3 to VSS + 7.0 V 1.0 mA VSS - 0.3 to VSS + 7.0 V VSS - 0.3 to VDD + 0.3 V Operation ambient temperature Topr -40 to +85 C Storage temperature Tstg -40 to +125 C CMOS output product Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Thermal Resistance Value Table 9 Item Symbol Condition Board A Board B SOT-23-3 Board C Board D Board E Junction-to-ambient thermal resistance*1 JA Board A Board B SNT-4A Board C Board D Board E *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Min. Typ. Max. Unit - - - - - - - - - - 200 165 - - - 300 242 - - - - - - - - - - - - - C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W Refer to " Power Dissipation" and "Test Board" for details. 7 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Electrical Characteristics 1. Product with omnipolar detection 1. 1 S-5712AxDxx Table 10 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Output voltage Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE Condition Min. Typ. Max. Unit Test Circuit - 1.60 - 1.85 2.0 3.50 4.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.10 50.40 50.50 - - 100.00 ms ms ms - - - Average value Nch open-drain output product Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL 1. 2 S-5712BxDxx Table 11 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Power supply voltage Current consumption Output voltage Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE 8 Average value Nch open-drain output product Condition Min. Typ. Max. Unit Test Circuit - 1.60 - 1.85 1.0 3.50 2.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.10 204.00 204.10 - - 400.00 ms ms ms - - - Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 1. 3 S-5712CxDxx Table 12 Item Power supply voltage Current consumption Output voltage Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE 2. (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit - Average value Nch open-drain output product Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL 1.60 - 1.85 12.0 3.50 22.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.10 5.60 5.70 - - 12.00 ms ms ms - - - Product with S pole or N pole detection 2. 1 S-5712AxSxx, S-5712AxNxx Table 13 Item Power supply voltage Current consumption Output voltage (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE - Average value Nch open-drain output product Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL 1.60 - 1.85 1.4 3.50 3.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.05 50.80 50.85 - - 100.00 ms ms ms - - - 9 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 2. 2 S-5712BxSxx, S-5712BxNxx Table 14 Item Power supply voltage Current consumption Output voltage (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE - Average value Nch open-drain output product Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL 1.60 - 1.85 1.0 3.50 2.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.05 204.00 204.05 - - 400.00 ms ms ms - - - 2. 3 S-5712CxSxx, S-5712CxNxx Table 15 Item Power supply voltage Current consumption Output voltage Symbol VDD IDD VOUT Leakage current ILEAK Awake mode time Sleep mode time Operating cycle tAW tSL tCYCLE 10 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Test Condition Min. Typ. Max. Unit Circuit - Average value Nch open-drain output product Output transistor Nch, IOUT = 0.5 mA Output transistor Nch, IOUT = 0.5 mA CMOS output product Output transistor Pch, IOUT = -0.5 mA Nch open-drain output product Output transistor Nch, VOUT = 3.5 V - - tAW + tSL 1.60 - 1.85 6.0 3.50 11.0 V A - 1 - - 0.4 V 2 - - 0.4 V 2 VDD - 0.4 - - V 3 - - 1 A 4 - - - 0.05 6.00 6.05 - - 12.00 ms ms ms - - - LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Magnetic Characteristics 1. Product with omnipolar detection 1. 1 Product with BOP = 1.8 mT typ. Table 16 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 1. 2 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 0.6 -3.0 0.1 -2.4 - - Typ. 1.8 -1.8 1.1 -1.1 0.7 0.7 Max. 3.0 -0.6 2.4 -0.1 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 Product with BOP = 3.0 mT typ. Table 17 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 1. 3 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 1.4 -4.0 1.1 -3.7 - - Typ. 3.0 -3.0 2.2 -2.2 0.8 0.8 Max. 4.0 -1.4 3.7 -1.1 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 Product with BOP = 4.5 mT typ. Table 18 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point *1 Release point*2 Hysteresis width*3 1. 4 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 2.5 -6.0 2.0 -5.5 - - Typ. 4.5 -4.5 3.5 -3.5 1.0 1.0 Max. 6.0 -2.5 5.5 -2.0 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 Product with BOP = 7.0 mT typ. Table 19 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 Release point*2 Hysteresis width*3 S pole N pole S pole N pole S pole N pole Symbol BOPS BOPN BRPS BRPN BHYSS BHYSN Condition - - - - BHYSS = BOPS - BRPS BHYSN = |BOPN - BRPN| Min. 5.0 -8.5 3.7 -7.2 - - Typ. 7.0 -7.0 5.2 -5.2 1.8 1.8 Max. 8.5 -5.0 7.2 -3.7 - - Unit mT mT mT mT mT mT Test Circuit 5 5 5 5 5 5 11 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 2. Product with S pole detection 2. 1 Product with BOP = 1.8 mT typ. Table 20 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 2. 2 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 0.6 0.1 - Typ. 1.8 1.1 0.7 Max. 3.0 2.4 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 3.0 mT typ. Table 21 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole *2 Release point S pole Hysteresis width*3 S pole 2. 3 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 1.4 1.1 - Typ. 3.0 2.2 0.8 Max. 4.0 3.7 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 4.5 mT typ. Table 22 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole *3 Hysteresis width S pole 2. 4 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 2.5 2.0 - Typ. 4.5 3.5 1.0 Max. 6.0 5.5 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 7.0 mT typ. Table 23 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 S pole Release point*2 S pole Hysteresis width*3 S pole 12 Symbol BOPS BRPS BHYSS Condition - - BHYSS = BOPS - BRPS Min. 5.0 3.7 - Typ. 7.0 5.2 1.8 Max. 8.5 7.2 - Unit mT mT mT Test Circuit 5 5 5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. Product with N pole detection 3. 1 Product with BOP = 1.8 mT typ. Table 24 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 3. 2 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -3.0 -2.4 - Typ. -1.8 -1.1 0.7 Max. -0.6 -0.1 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 3.0 mT typ. Table 25 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole 3. 3 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -4.0 -3.7 - Typ. -3.0 -2.2 0.8 Max. -1.4 -1.1 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 4.5 mT typ. Table 26 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole *2 Release point N pole Hysteresis width*3 N pole 3. 4 Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -6.0 -5.5 - Typ. -4.5 -3.5 1.0 Max. -2.5 -2.0 - Unit mT mT mT Test Circuit 5 5 5 Product with BOP = 7.0 mT typ. Table 27 (Ta = +25C, VDD = 1.85 V, VSS = 0 V unless otherwise specified) Item Operation point*1 N pole Release point*2 N pole Hysteresis width*3 N pole Symbol BOPN BRPN BHYSN Condition - - BHYSN = |BOPN - BRPN| Min. -8.5 -7.2 - Typ. -7.0 -5.2 1.8 Max. -5.0 -3.7 - Unit mT mT mT Test Circuit 5 5 5 *1. BOPN, BOPS: Operation points BOPN and BOPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is increased (by moving the magnet closer). Even when the magnetic flux density exceeds BOPN or BOPS, VOUT retains the status. *2. BRPN, BRPS: Release points BRPN and BRPS are the values of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied to this IC by the magnet (N pole or S pole) is decreased (the magnet is moved further away). Even when the magnetic flux density falls below BRPN or BRPS, VOUT retains the status. *3. BHYSN, BHYSS: Hysteresis widths BHYSN and BHYSS are the difference between BOPN and BRPN, and BOPS and BRPS, respectively. Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss. 13 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Test Circuits A *1 R 100 k VDD S-5712A/B/C OUT Series VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 5 Test Circuit 1 VDD S-5712A/B/C OUT Series VSS Figure 6 A V Test Circuit 2 VDD S-5712A/B/C OUT Series VSS Figure 7 14 A V Test Circuit 3 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series VDD S-5712A/B/C OUT Series A VSS V Figure 8 Test Circuit 4 R*1 100 k VDD S-5712A/B/C Series OUT VSS *1. V Resistor (R) is unnecessary for the CMOS output product. Figure 9 Test Circuit 5 15 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series * Standard Circuit R*1 100 k VDD CIN 0.1 F S-5712A/B/C OUT Series VSS *1. Resistor (R) is unnecessary for the CMOS output product. Figure 10 Caution The above connection diagram and constants will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constants. 16 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Operation 1. Direction of applied magnetic flux This IC detects the flux density which is vertical to the marking surface. Figure 11 and Figure 12 show the direction in which magnetic flux is being applied. 1. 1 SOT-23-3 1. 2 SNT-4A N S N S Marking surface Marking surface Figure 11 2. Figure 12 Position of Hall sensor Figure 13 and Figure 14 show the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. 2. 1 SOT-23-3 2. 2 Top view Top view The center of Hall sensor; in this 0.3 mm 1 2 SNT-4A 1 The center of Hall sensor; in this 0.3 mm 4 2 3 3 0.16 mm typ. 0.7 mm typ. Figure 13 Figure 14 17 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. Basic operation This IC changes the output voltage level (VOUT) according to the level of the magnetic flux density (N pole or S pole) applied by a magnet. The following explains the operation when the output logic is active "L". 3. 1 Product with omnipolar detection When the magnetic flux density vertical to the marking surface exceeds the operation point (BOPN or BOPS) after the S pole or N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the S pole or N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than the release point (BRPN or BRPS), VOUT changes from "L" to "H". Figure 15 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN BHYSS H L N pole BOPN BRPN BRPS 0 BOPS S pole Magnetic flux density (B) Figure 15 3. 2 Product with S pole detection When the magnetic flux density vertical to the marking surface exceeds BOPS after the S pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the S pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than BRPS, VOUT changes from "L" to "H". Figure 16 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSS H L N pole 0 BRPS Magnetic flux density (B) Figure 16 18 BOPS S pole LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. 3 Product with N pole detection When the magnetic flux density vertical to the marking surface exceeds BOPN after the N pole of a magnet is moved closer to the marking surface of this IC, VOUT changes from "H" to "L". When the N pole of a magnet is moved further away from the marking surface of this IC and the magnetic flux density is lower than BRPN, VOUT changes from "L" to "H". Figure 17 shows the relationship between the magnetic flux density and VOUT. VOUT BHYSN H L N pole BOPN 0 BRPN S pole Magnetic flux density (B) Figure 17 19 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 4. Time dependency in the current consumption This IC performs the intermittent operation, and operates at low current consumption due to repeating the sleep mode (tSL) and the awake mode (tAW ). Figure 18 shows the time dependency in the current consumption. Operating cycle (tCYCLE) Current consumption Sleep mode time (tSL) Awake mode time (tAW) At awake mode 640 A typ. At sleep mode 0.72 A typ. Time Figure 18 20 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 5. Timing chart Figure 19 shows the operation timing of this IC. BOPS BRPS Magnetic flux density applied to this IC BRPN BOPN Current consumption (IDD) Output voltage (VOUT) (Omnipolar detection, active "L" product) Output voltage (VOUT) (S pole detection, active "L" product) Output voltage (VOUT) (N pole detection, active "L" product) Output voltage (VOUT) (Omnipolar detection, active "H" product) Figure 19 21 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Precautions * If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. * Note that the IC may malfunction if the power supply voltage rapidly changes. * Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. * Large stress on this IC may affect the magnetic characteristics. Avoid large stress which is caused by the handling during or after mounting the IC on a board. * ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 22 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Characteristics (Typical Data) S-5712AxDxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) S-5712AxDx0 1. 1. 2 VDD = 1.85 V 4.0 BOPS 2.0 BRPS 0.0 BRPN 2.0 BOPN 4.0 6.0 1. 1. 3 40 25 0 25 Ta [C] 50 BOP, BRP [mT] 6.0 4.0 2.0 1. 2 BRPS 0.0 BRPN -2.0 -4.0 -6.0 BOPN -40 -25 0 +25 Ta [C] +50 BRPS BRPN 0.0 -2.0 -4.0 10.0 7.5 5.0 2.5 0.0 -2.5 -5.0 -7.5 -10.0 BOPN -40 -25 0 +25 Ta [C] S-5712AxDx3 +50 +75 +85 +75 +85 VDD = 1.85 V BOPS BRPS BRPN BOPN -40 -25 0 +25 Ta [C] +50 +75 +85 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 1. 2. 1 S-5712AxDx0 Ta = +25C 6.0 BOP, BRP [mT] 2.0 1. 1. 4 VDD = 1.85 V BOPS BOPS 4.0 -6.0 75 85 S-5712AxDx2 VDD = 1.85 V 6.0 BOP, BRP [mT] BOP, BRP [mT] 6.0 S-5712AxDx1 BOP, BRP [mT] 1. 1. 1 4.0 BOPS 2.0 BRPS 0.0 2.0 BRPN BOPN 4.0 1. 2. 2 6.0 1.5 2.5 VDD [V] 3.0 BOPS 4.0 2.0 BRPS 0.0 BRPN -2.0 -4.0 BOPN 1.5 2.0 2.0 2.5 VDD [V] 3.0 BRPS BRPN 0.0 -2.0 -4.0 1. 2. 4 Ta = +25C 6.0 -6.0 4.0 -6.0 3.5 S-5712AxDx2 Ta = +25C BOPS 10.0 7.5 5.0 2.5 0.0 -2.5 -5.0 -7.5 -10.0 BOPN 1.5 2.0 2.5 VDD [V] S-5712AxDx3 3.5 3.0 3.5 Ta = +25C BOPS BOP, BRP [mT] 1. 2. 3 2.0 S-5712AxDx1 6.0 BOP, BRP [mT] 1. 1 BOP, BRP [mT] 1. BRPS BRPN BOPN 1.5 2.0 2.5 VDD [V] 3.0 3.5 23 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 1. 3 Current consumption (IDD) vs. Temperature (Ta) 6.0 1. 4 Current consumption (IDD) vs. Power supply voltage (VDD) 6.0 5.0 VDD = 3.0 V 3.0 2.0 VDD = 1.85 V 1.0 0.0 1. 5 -40 -25 tAW [s] 150 +25 Ta [C] +50 +25 Ta [C] +25 Ta [C] +50 +75 +85 3.5 Ta = +25C Ta = +85C 1.5 1. 8 2.0 2.5 VDD [V] 3.0 3.5 Sleep mode time (tSL) vs. Power supply voltage (VDD) 100 Ta = -40C Ta = +25C 60 40 Ta = +85C 20 0 3.0 0 tSL [ms] tSL [ms] 20 24 Ta = -40C 80 VDD = 3.0 V -40 -25 2.5 VDD [V] 100 VDD = 1.85 V 60 0 2.0 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 100 40 Ta = -40C 1.5 +75 +85 Sleep mode time (tSL) vs. Temperature (Ta) 80 2.0 50 +50 Ta = +25C 3.0 150 VDD = 3.0 V 0 Ta = +85C 0.0 1. 6 100 -40 -25 4.0 1.0 +75 +85 VDD = 1.85 V 50 1. 7 0 Awake mode time (tAW) vs. Temperature (Ta) 200 0 IDD [A] 4.0 tAW [s] IDD [A] 5.0 0 1.5 2.0 2.5 VDD [V] 3.0 3.5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series S-5712AxSxx, S-5712AxNxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) S-5712AxSx1 2. 1. 2 VDD = 1.85 V BOP, BRP [mT] 6.0 4.0 BOPS 2.0 0.0 2. 1. 3 BRPS -40 -25 0 +25 Ta [C] BRPN BOPN -4.0 -6.0 2. 1. 5 -40 -25 BOPS 0 +25 Ta [C] +50 +75 +85 BRPS 2.0 2. 1. 4 VDD = 1.85 V -2.0 VDD = 1.85 V 4.0 0.0 +75 +85 S-5712AxNx1 0.0 BOP, BRP [mT] +50 S-5712AxSx2 6.0 BOP, BRP [mT] 2. 1. 1 -40 -25 0 +25 Ta [C] +50 VDD = 1.85 V -2.0 BRPN -4.0 -6.0 +75 +85 S-5712AxNx2 0.0 BOP, BRP [mT] 2. 1 BOPN -40 -25 0 +25 Ta [C] +50 +75 +85 S-5712AxNx3 VDD = 1.85 V 0.0 BOP, BRP [mT] 2. -2.5 BRPN -5.0 -7.5 -10.0 BOPN -40 -25 0 +25 Ta [C] +50 +75 +85 25 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 2. 2. 1 S-5712AxSx1 2. 2. 2 Ta = +25C BOP, BRP [mT] 6.0 BOPS 4.0 2.0 BRPS 0.0 2.0 2.5 VDD [V] BOPN -4.0 1.5 2.0 2.5 VDD [V] 3.0 3.5 S-5712AxNx3 Ta = +25C -2.5 BRPN -5.0 -7.5 BOPN 1.5 2.0 2.5 VDD [V] 3.0 3.5 2.0 2.5 VDD [V] 3.0 3.5 S-5712AxNx2 Ta = +25C 0.0 BOP, BRP [mT] BOP, BRP [mT] 1.5 Ta = +25C 0.0 BOP, BRP [mT] BRPS 2.0 2. 2. 4 -2.0 -10.0 BOPS 4.0 3.5 BRPN 2. 2. 5 26 3.0 S-5712AxNx1 0.0 -6.0 Ta = +25C 0.0 1.5 2. 2. 3 S-5712AxSx2 6.0 BOP, BRP [mT] 2. 2 -2.0 BRPN -4.0 BOPN -6.0 1.5 2.0 2.5 VDD [V] 3.0 3.5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Current consumption (IDD) vs. Temperature (Ta) 6.0 5.0 4.0 4.0 3.0 VDD = 3.0 V 2.0 0.0 0 +25 Ta [C] +50 +75 +85 Awake mode time (tAW) vs. Temperature (Ta) 2.0 2.5 VDD [V] 3.0 200 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 150 150 100 0 VDD = 1.85 V -40 -25 0 +25 Ta [C] +50 1.5 2. 8 tSL [ms] 40 VDD = 3.0 V 2.0 Ta = -40C -40 -25 0 +25 Ta [C] +50 +75 +85 3.0 3.5 Ta = +25C 60 40 Ta = +85C 20 20 2.5 VDD [V] Sleep mode time (tSL) vs. Power supply voltage (VDD) 100 80 VDD = 1.85 V 60 0 Ta = +25C Ta = +85C 0 +75 +85 Sleep mode time (tSL) vs. Temperature (Ta) 80 Ta = -40C 100 3.5 50 VDD = 3.0 V 100 tSL [ms] Ta = -40C 1.5 2. 6 Ta = +25C 2.0 0.0 tAW [s] tAW [s] -40 -25 Ta = +85C 3.0 1.0 VDD = 1.85 V 50 2. 7 Current consumption (IDD) vs. Power supply voltage (VDD) 6.0 5.0 1.0 2. 5 2. 4 IDD [A] IDD [A] 2. 3 0 1.5 2.0 2.5 VDD [V] 3.0 3.5 27 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series S-5712BxDxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) 3. 1. 1 S-5712BxDx1 3. 1. 2 VDD = 1.85 V BOPS 4.0 2.0 BRPS BRPN 0.0 -2.0 -4.0 -6.0 3. 2 BOPN -40 -25 0 +25 Ta [C] BOP, BRP [mT] 4.0 2.0 BRPS 0.0 BRPN -2.0 -4.0 BOPN -6.0 +75 +85 S-5712BxDx1 3. 2. 2 Ta = +25C 6.0 -40 -25 0 +25 Ta [C] +50 +75 +85 2.0 BRPS BRPN 0.0 -2.0 -4.0 3. 3 BOPN 1.5 2.0 2.5 VDD [V] 3.5 3.0 Current consumption (IDD) vs. Temperature (Ta) 6.0 S-5712BxDx2 2.0 0.0 -6.0 4.0 0.0 VDD = 1.85 V 40 25 0 25 Ta [C] 50 75 85 BOPN 1.5 2.0 2.5 VDD [V] 3.0 3.5 Current consumption (IDD) vs. Power supply voltage (VDD) 6.0 4.0 1.0 BRPN -4.0 5.0 VDD = 3.0 V BRPS -2.0 3. 4 3.0 BOPS 4.0 5.0 2.0 Ta = +25C 6.0 BOPS 4.0 -6.0 IDD [A] VDD = 1.85 V BOPS Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 3. 2. 1 28 +50 S-5712BxDx2 6.0 BOP, BRP [mT] BOP, BRP [mT] 6.0 BOP, BRP [mT] 3. 1 IDD [A] 3. 3.0 Ta = +85C 2.0 1.0 Ta = +25C Ta = 40C 0.0 1.5 2.0 2.5 VDD [V] 3.0 3.5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 3. 5 Awake mode time (tAW) vs. Temperature (Ta) 3. 6 200 100 VDD = 3.0 V 50 0 0 +25 Ta [C] +50 400 350 300 250 200 150 100 50 0 1.5 3. 8 VDD = 3.0 V VDD = 1.85 V 40 25 0 25 Ta [C] 50 75 85 Ta = +85C 0 +75 +85 Sleep mode time (tSL) vs. Temperature (Ta) Ta = +25C 100 50 tSL [ms] tSL [ms] 3. 7 -40 -25 Ta = -40C 150 VDD = 1.85 V tAW [s] tAW [s] 150 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 2.0 2.5 VDD [V] 3.0 3.5 Sleep mode time (tSL) vs. Power supply voltage (VDD) 400 350 Ta = 40C 300 250 Ta = 25C 200 150 Ta = 85C 100 50 0 1.5 2.0 2.5 3.0 3.5 VDD [V] 29 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series S-5712BxSxx, S-5712BxNxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) 4. 1. 1 S-5712BxSx2 BOP, BRP [mT] BOPS 4.0 IDD [A] 4. 3 BRPS 2.0 -40 -25 0 +25 Ta [C] 5.0 4.0 0 25 Ta [C] 50 Ta = 40C 2.0 2.5 VDD [V] 3.0 150 tAW [s] 150 100 VDD = 1.85 V Ta = -40C 100 3.5 Ta = +25C 50 VDD = 3.0 V -40 -25 0 +25 Ta [C] +50 1.5 4. 8 VDD = 3.0 V VDD = 1.85 V 40 25 0 25 Ta [C] 50 75 85 Ta = +85C 0 +75 +85 Sleep mode time (tSL) vs. Temperature (Ta) 400 350 300 250 200 150 100 50 0 3.5 Ta = +25C 200 tSL [ms] tSL [ms] Ta = +85C 2.0 1.5 4. 6 3.0 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 0 30 3.0 0.0 75 85 Awake mode time (tAW) vs. Temperature (Ta) 2.5 VDD [V] 1.0 VDD = 1.85 V 40 25 2.0 Current consumption (IDD) vs. Power supply voltage (VDD) 6.0 4.0 2.0 BRPS 2.0 1.5 4. 4 VDD = 3.0 V BOPS 4.0 0.0 +75 +85 3.0 Ta = +25C 6.0 50 4. 7 S-5712BxSx2 5.0 0.0 tAW [s] +50 Current consumption (IDD) vs. Temperature (Ta) 6.0 1.0 4. 5 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 4. 2. 1 VDD = 1.85 V 6.0 0.0 4. 2 BOP, BRP [mT] 4. 1 IDD [A] 4. 2.0 2.5 VDD [V] 3.0 3.5 Sleep mode time (tSL) vs. Power supply voltage (VDD) 400 350 Ta = 40C 300 250 Ta = 25C 200 150 Ta = 85C 100 50 0 1.5 2.0 2.5 3.0 3.5 VDD [V] LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series S-5712CxDxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) 5. 1. 1 S-5712CxDx1 5. 1. 2 VDD = 1.85 V BOPS 4.0 2.0 BRPS BRPN 0.0 -2.0 -4.0 -6.0 -40 -25 0 +25 Ta [C] 2.0 +75 +85 BRPS 0.0 BRPN -2.0 -4.0 BOPN -40 -25 0 +25 Ta [C] +50 +75 +85 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 5. 2. 1 S-5712CxDx1 5. 2. 2 Ta = +25C 6.0 BOP, BRP [mT] +50 VDD = 1.85 V BOPS 4.0 -6.0 BOPS 4.0 2.0 BRPS BRPN 0.0 -2.0 -4.0 -6.0 5. 3 BOPN 1.5 2.0 2.5 VDD [V] 3.5 3.0 Current consumption (IDD) vs. Temperature (Ta) 25 20 VDD = 1.85 V BRPS 0.0 BRPN -2.0 -4.0 -6.0 BOPN 1.5 2.0 -40 -25 0 +25 Ta [C] +50 +75 +85 2.5 VDD [V] 3.0 3.5 Current consumption (IDD) vs. Power supply voltage (VDD) 25 Ta = +85C Ta = +25C 20 15 10 Ta = -40C 5 5 0 BOPS 2.0 VDD = 3.0 V 10 Ta = +25C 4.0 5. 4 15 S-5712CxDx2 6.0 BOP, BRP [mT] 5. 2 BOPN S-5712CxDx2 6.0 IDD [A] BOP, BRP [mT] 6.0 BOP, BRP [mT] 5. 1 IDD [A] 5. 0 1.5 2.0 2.5 VDD [V] 3.0 3.5 31 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 5. 5 Awake mode time (tAW) vs. Temperature (Ta) 5. 6 200 100 VDD = 3.0 V 50 0 5. 7 -40 -25 0 +25 Ta [C] +50 1.5 5. 8 tSL [ms] tSL [ms] 6 VDD = 3.0 V 32 -40 -25 0 +25 Ta [C] +50 +75 +85 2.5 VDD [V] 3.0 3.5 Ta = -40C Ta = +25C 8 6 4 Ta = +85C 2 2 0 2.0 Sleep mode time (tSL) vs. Power supply voltage (VDD) 12 10 VDD = 1.85 V 4 Ta = +85C 0 +75 +85 12 8 Ta = +25C 100 50 Sleep mode time (tSL) vs. Temperature (Ta) 10 Ta = -40C 150 VDD = 1.85 V tAW [s] tAW [s] 150 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 0 1.5 2.0 2.5 VDD [V] 3.0 3.5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series S-5712CxSxx, S-5712CxNxx Operation point, release point (BOP, BRP) vs. Temperature (Ta) S-5712CxSx1 6. 1. 2 VDD = 1.85 V 4.0 BOPS 2.0 0.0 6. 1. 3 BRPS -40 -25 0 +25 Ta [C] VDD = 1.85 V BOP, BRP [mT] BRPN BOPN -4.0 -6.0 -40 -25 0 +25 Ta [C] +50 BRPS 2.0 -40 -25 0 +25 Ta [C] +75 +85 S-5712CxNx2 VDD = 1.85 V 0.0 -2.0 BRPN -4.0 -6.0 +75 +85 +50 BOPN -40 -25 0 +25 Ta [C] +50 +75 +85 Operation point, release point (BOP, BRP) vs. Power supply voltage (VDD) 6. 2. 1 S-5712CxSx1 6. 2. 2 Ta = +25C 6.0 BOP, BRP [mT] BOPS 6. 1. 4 -2.0 VDD = 1.85 V 4.0 0.0 +75 +85 S-5712CxNx1 0.0 6. 2 +50 S-5712CxSx2 6.0 BOP, BRP [mT] BOP, BRP [mT] 6.0 BOP, BRP [mT] 6. 1. 1 BOPS 4.0 2.0 BRPS 0.0 2.0 2.5 VDD [V] 3.0 BOPS 4.0 BRPS 2.0 3.5 S-5712CxNx1 1.5 6. 2. 4 Ta = +25C 0.0 BOPN -4.0 1.5 2.0 2.5 VDD [V] 3.0 3.5 2.0 2.5 VDD [V] 3.0 3.5 S-5712CxNx2 Ta = +25C 0.0 BOP, BRP [mT] BRPN -2.0 -6.0 Ta = +25C 0.0 1.5 6. 2. 3 S-5712CxSx2 6.0 BOP, BRP [mT] 6. 1 BOP, BRP [mT] 6. -2.0 BRPN -4.0 BOPN -6.0 1.5 2.0 2.5 VDD [V] 3.0 3.5 33 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series 10 tAW [s] 6. 5 VDD = 3.0 V 5 0 6. 4 VDD = 1.85 V -40 -25 0 +25 Ta [C] +50 IDD [A] Current consumption (IDD) vs. Temperature (Ta) 15 3.0 150 150 VDD = 1.85 V -40 -25 0 +25 Ta [C] +50 1.5 6. 8 tSL [ms] 6 VDD = 3.0 V 4 2.0 -40 -25 0 +25 Ta [C] +50 +75 +85 3.0 3.5 Ta = -40C Ta = +25C 8 6 4 Ta = +85C 2 2 2.5 VDD [V] Sleep mode time (tSL) vs. Power supply voltage (VDD) 12 10 VDD = 1.85 V 8 0 Ta = +25C Ta = +85C 0 +75 +85 Sleep mode time (tSL) vs. Temperature (Ta) 10 Ta = -40C 100 3.5 50 VDD = 3.0 V 12 tSL [ms] 2.5 VDD [V] 200 100 6. 6 2.0 Awake mode time (tAW) vs. Power supply voltage (VDD) 200 0 34 Ta = +25C 5 1.5 50 6. 7 Ta = +85C 10 0 +75 +85 Awake mode time (tAW) vs. Temperature (Ta) Current consumption (IDD) vs. Power supply voltage (VDD) 15 Ta = -40C tAW [s] IDD [A] 6. 3 0 1.5 2.0 2.5 VDD [V] 3.0 3.5 LOW VOLTAGE OPERATION OMNIPOLAR / UNIPOLAR DETECTION TYPE HALL EFFECT SWITCH IC Rev.5.1_01 S-5712A/B/C Series Power Dissipation SOT-23-3 SNT-4A Tj = 125C max. 0.8 B 0.6 A 0.4 0.2 0.0 0 25 50 75 100 125 150 175 Tj = 125C max. 1.0 Power dissipation (PD) [W] Power dissipation (PD) [W] 1.0 0.8 0.6 B 0.4 A 0.2 0.0 0 25 Ambient temperature (Ta) [C] Board A B C D E Power Dissipation (PD) 0.50 W 0.61 W - - - 50 75 100 125 150 175 Ambient temperature (Ta) [C] Board A B C D E Power Dissipation (PD) 0.33 W 0.41 W - - - 35 SOT-23-3/3S/5/6 Test Board ICMountArea (1) Board A Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 2 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 - (2) Board B Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] Thermal via 1 2 3 4 Specification 114.3 x 76.2 x t1.6 FR-4 4 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 - No. SOT23x-A-Board-SD-2.0 ABLIC Inc. SNT-4A Test Board ICMountArea (1) Board A Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] 1 2 3 4 Thermal via Specification 114.3 x 76.2 x t1.6 FR-4 2 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.070 - (2) Board B Item Size [mm] Material Number of copper foil layer Copper foil layer [mm] Thermal via 1 2 3 4 Specification 114.3 x 76.2 x t1.6 FR-4 4 Land pattern and wiring for testing: t0.070 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.035 74.2 x 74.2 x t0.070 - No. SNT4A-A-Board-SD-1.0 ABLIC Inc. 2.90.2 1 2 3 +0.1 0.16 -0.06 0.950.1 1.90.2 0.40.1 No. MP003-C-P-SD-1.1 TITLE SOT233-C-PKG Dimensions No. MP003-C-P-SD-1.1 ANGLE UNIT mm ABLIC Inc. +0.1 o1.5 -0 4.00.1 2.00.1 +0.25 o1.0 -0 0.230.1 4.00.1 1.40.2 3.20.2 1 2 3 Feed direction No. MP003-C-C-SD-2.0 TITLE SOT233-C-Carrier Tape No. MP003-C-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.20.5 Enlarged drawing in the central part o130.2 No. MP003-Z-R-SD-1.0 SOT233-C-Reel TITLE MP003-Z-R-SD-1.0 No. QTY. ANGLE UNIT mm ABLIC Inc. 3,000 1.20.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.480.02 0.20.05 No. PF004-A-P-SD-6.0 TITLE SNT-4A-A-PKG Dimensions No. PF004-A-P-SD-6.0 ANGLE UNIT mm ABLIC Inc. +0.1 o1.5 -0 4.00.1 2.00.05 0.250.05 +0.1 1.450.1 2 1 3 4 o0.5 -0 4.00.1 0.650.05 Feed direction No. PF004-A-C-SD-2.0 TITLE SNT-4A-A-Carrier Tape No. PF004-A-C-SD-2.0 ANGLE UNIT mm ABLIC Inc. 12.5max. 9.00.3 Enlarged drawing in the central part o130.2 (60) (60) No. PF004-A-R-SD-1.0 TITLE SNT-4A-A-Reel No. PF004-A-R-SD-1.0 QTY. ANGLE UNIT mm ABLIC Inc. 5,000 0.52 1.16 2 0.52 0.35 1. 2. 0.3 1 (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) 0.03 mm 1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.). 2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm). Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package. 2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm or less from the land pattern surface. 3. Match the mask aperture size and aperture position with the land pattern. 4. Refer to "SNT Package User's Guide" for details. 1. 2. (0.25 mm min. / 0.30 mm typ.) (1.10 mm ~ 1.20 mm) TITLE SNT-4A-A -Land Recommendation PF004-A-L-SD-4.1 No. No. PF004-A-L-SD-4.1 ANGLE UNIT mm ABLIC Inc. Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein. 4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges. 5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited. 14. For more details on the information described herein, contact our sales office. 2.2-2018.06 www.ablic.com