2N5679 2N5680 PNP
2N5681 2N5682 NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N5679 2N5680
SYMBOL 2N5681 2N5682 UNITS
Collector-Base Voltage VCBO 100 120 V
Collector-Emitter Voltage VCEO 100 120 V
Emitter-Base Voltage VEBO 4.0 V
Continuous Collector Current IC 1.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 10 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 17.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 1.0 µA
ICEV V
CE=Rated VCEO, VEB=1.5V
1.0 µA
ICEV V
CE=Rated VCEO, VEB=1.5V, TC=150°C 1.0 mA
ICEO V
CE=70V (2N5679, 2N5681)
10 µA
ICEO V
CE=80V (2N5680, 2N5682)
10 µA
IEBO V
EB=4.0V 1.0 µA
BVCEO I
C=10mA (2N5679, 2N5681) 100 V
BVCEO I
C=10mA (2N5680, 2N5682) 120 V
VCE(SAT) I
C=250mA, IB=25mA 0.6 V
VCE(SAT) I
C=500mA, IB=50mA 1.0 V
VCE(SAT) I
C=1.0A, IB=200mA 2.0 V
VBE(ON) V
CE=2.0V IC=250mA 1.0 V
hFE V
CE=2.0V, IC=250mA 40 150
hFE V
CE=2.0V, IC=1.0A 5.0
hfe V
CE=1.5V, IC=0.2A, f=1.0kHz 40
fT V
CE=10V, IC=100mA, f=10MHz 30 MHz
Cob V
CB=20V, IE=0, f=1.0MHz 50 pF
TO-39 CASE
R2 (2-December 2013)
www.centralsemi.com