APTC80A15SCTG
APTC80A15SC
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NT C2
OUT
VBUS
NT C1
0/VBUS
Q1
G1
Q2
S1
S2
G2
NTC2S1
OUT
OUT
NTC1
VBUS
0/ VB US
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 800 V
Tc = 25°C 28
ID Continuo us Drain Current Tc = 80°C 21
IDM Pulsed Drain current 112
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 150 mΩ
PD Maximum Power Dissipation Tc = 25°C 277 W
IAR Avalanche current (repetitive and non repetitive) 17 A
EAR Repetitive Avalanche Energy 0.5
EAS Single Pulse Avalanche Energy 670 mJ
VDSS = 800V
RDSon = 150mΩ max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Applicatio
n
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Fe ature s
•
- Ul tra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq uenc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Phase leg
Serie & SiC parallel diodes
Super Junction
M
OSFET Powe
r
Modul
e
APTC80A15SCTG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 800V Tj = 25°C 50
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V T
j = 125°C 375 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 14A 150
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2mA 2.1 3 3.9 V
IGS S Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 4507
Coss Output Capacitance 2092
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 108
pF
Qg Total gate Charge 180
Qgs Gate – Source Charge 22
Qgd Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A 90
nC
Td(on) Tur n-on Delay Ti me 10
Tr Rise Time 13
Td(off) Turn-off Delay Time 83
Tf Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5Ω 35
ns
Eon Turn-on Switching Energy 291
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω 278
µJ
Eon Turn-on Switching Energy 510
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5Ω 342 µJ
Series diode ratings and characteristics
S
ymbol Characteristic Test Conditions Min Typ Ma
x
Unit
VRRM Maximum Peak Repetitive Reverse Voltage 200 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 85°C 30 A
IF = 30A 1.1 1.15
IF = 60A 1.4
VF Diode Forward Voltage
IF = 30A Tj = 125°C 0.9
V
Tj = 25°C 24
trr Reverse Recovery Time
Tj = 125°C 48
ns
Tj = 25°C 33
Qrr Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/µs
Tj = 125°C 150
nC
APTC80A15SCTG
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Parallel diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 150 600
IRM Maximum Reverse Leakage Current VR=1200V Tj = 175°C 300 3000 µA
IF DC Forward Current Tc = 125°C 15 A
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 15A Tj = 175°C 2.6 3.0 V
QC Total Capacitive Charge IF = 15A, VR = 600V
di/dt =1000A/µs 42 nC
f = 1MHz, VR = 200V 135
Q Total Capacitance f = 1MHz, VR = 400V 99 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.45
Series diode 1.2
RthJC Junction to Case Thermal Resistance
Parallel diode 1.0
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
AL L DIMENSIONS MARKE D " * " ARE TOLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
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Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=-55°C
TJ=25°C
TJ=125°C
TJ=125°C
0
20
40
60
80
100
012345678
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 102030405060
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 14A
0
5
10
15
20
25
30
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
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0.90
0.95
1.00
1.05
1.10
1.15
-50 0 50 100 150
TJ, Junction Temperature (°C)
BVDSS, Drain to Source Breakdown
Volta
g
e
(
Normalized
)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 0 50 100 150
TJ, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 14A
Threshold Voltage vs Temperature
0.7
0.8
0.9
1.0
1.1
1.2
-50 0 50 100 150
TC, Case Tem per ature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
100ms
1ms
100µs
0
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by
RD
n
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS =160V
VDS=400V
VDS=640V
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Gate Charge (nC)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
ID=28A
TJ=25°C
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10 20 30 40 50
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
10 20 30 40 50
ID, Drain Current (A)
tr and tf (ns)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
150
300
450
600
750
900
10 20 30 40 50
ID, Drain Current (A)
Eon and Eoff (µJ)
VDS=533V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
500
1000
1500
2000
2500
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (µJ)
Switching Energy vs Gate Resistance
VDS=533V
ID=28A
TJ=125°C
L=100µH
Hard
Switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
6 8 10 12 14 16 18 20 22 24 26
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Curren
t
VDS=533V
D=50%
RG=2.5Ω
TJ=125°C
TJ=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.6 1 1.4 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
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Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
5
10
15
20
25
30
00.511.522.533.5
VF Forward Voltage (V)
IF Forward Current (A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
150
300
450
600
400 600 800 1000 1200 1400 1600
VR Reverse Voltage (V)
IR Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1 10 100 1000
VR Reverse Voltage
C, Capacitance (pF)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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