APTC80A15SCTG Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module NT C2 VBUS VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Q1 - G1 OUT S1 Q2 * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 NT C1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated * * OUT Benefits * Outstanding performance at high frequency operation OUT 0/ VBUS * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance S1 NTC2 S2 * Solderable terminals both for power and signal for G1 G2 NTC1 easy PCB mounting * Low profile * RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 800 V Tc = 25C 28 ID Continuous Drain Current A Tc = 80C 21 IDM Pulsed Drain current 112 VGS Gate - Source Voltage 30 V RDSon Drain - Source ON Resistance 150 m PD Maximum Power Dissipation Tc = 25C 277 W IAR Avalanche current (repetitive and non repetitive) 17 A EAR Repetitive Avalanche Energy 0.5 mJ EAS Single Pulse Avalanche Energy 670 www.microsemi.com 1-7 APTC80A15SCTG - Rev 2 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com July, 2006 VBUS APTC80A15SCTG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 3 Min Typ 4507 2092 108 180 IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s www.microsemi.com Unit Max Unit A m V nA pF nC 90 Test Conditions VR=200V Max 50 375 150 3.9 150 22 Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ 2.1 VGS = 10V VBus = 400V ID = 28A Series diode ratings and characteristics IRM Min Tj = 25C Tj = 125C 10 13 83 35 291 J 278 510 J 342 Min 200 Tj = 25C Tj = 125C Tc = 85C ns Typ Max 250 500 Tj = 125C 30 1.1 1.4 0.9 Tj = 25C 24 Tj = 125C 48 Tj = 25C 33 Tj = 125C 150 Unit V A A 1.15 V ns nC 2-7 July, 2006 IDSS Characteristic APTC80A15SCTG - Rev 2 Symbol APTC80A15SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions Min 1200 Tj = 25C Tj = 175C Tc = 125C Tj = 25C Tj = 175C VR=1200V Typ Max 150 300 15 1.6 2.6 600 3000 IF DC Forward Current VF Diode Forward Voltage IF = 15A QC Total Capacitive Charge IF = 15A, VR = 600V di/dt =1000A/s 42 Q Total Capacitance f = 1MHz, VR = 200V 135 f = 1MHz, VR = 400V 99 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Series diode Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 A A 1.8 3.0 V nC pF Max 0.45 1.2 1.0 Unit C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Unit V Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T AL L DIME NSIONS MARKE D " * " A RE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTC80A15SCTG - Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTC80A15SCTG Thermal Impedance (C/W) Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS =15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 T J=-55C 60 40 T J=125C TJ =25C 20 T J=125C 4V TJ =-55C 0 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to V GS=10V @ 14A 1.3 I D, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 I D, Drain Current (A) 50 60 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 80 4-7 APTC80A15SCTG - Rev 2 ID, Drain Current (A) 70 ID, Drain Current (A) 100 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 1.0 0.9 0.8 100 0 50 100 1 1000 Coss Crss 100 10 100ms 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A T J=25C 14 V DS =160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) Ciss 1ms 0 TC, Case Temperature (C) 10000 100s Single pulse TJ =150C TC=25C 1 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) V GS=10V ID= 14A www.microsemi.com 5-7 APTC80A15SCTG - Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80A15SCTG APTC80A15SCTG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=2.5 T J=125C L=100H 60 40 t r and tf (ns) 30 20 t d(on) 20 VDS=533V RG=2.5 T J=125C L=100H 10 0 0 10 20 30 40 I D, Drain Current (A) 50 10 Eon and Eoff (J) 600 450 2500 Eon Switching Energy (J) VDS=533V RG=2.5 T J=125C L=100H 750 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 900 Eoff 300 150 V DS=533V ID=28A T J=125C L=100H 2000 Eoff 1500 1000 Eon 500 Eoff 0 0 10 20 30 40 ID, Drain Current (A) 0 50 Operating Frequency vs Drain Current IDR , Reverse Drain Current (A) 400 350 300 250 ZVS 200 VDS=533V D=50% RG=2.5 T J=125C T J=75C 150 100 50 ZCS Hard Switching 0 6 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) 10 1 0.2 T J=150C T J=25C 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) July, 2006 Frequency (kHz) tr www.microsemi.com 6-7 APTC80A15SCTG - Rev 2 td(on) and td(off) (ns) t d(off) 80 APTC80A15SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 30 600 TJ=75C 20 15 T J=125C 10 T J=175C 5 IR Reverse Current (A) I F Forward Current (A) TJ=25C 25 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 450 300 T J=75C T J=125C 150 T J=175C 0 400 600 T J=25C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1200 1000 800 600 400 200 0 1000 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 July, 2006 10 100 VR Reverse Voltage APTC80A15SCTG - Rev 2 1