H04-004-07
Fuji Electric Co.,Ltd.
Matsumoto Factory
SPECIFICATION
Device Name :
Type Name :
Spec. No. :
IGBT Module
2MBI200TA-060
MS5F 5291
1
14
MS5F 5291
Oct. 22 ’02
Oct. 23 ’02
Y. K o b a y a s h i
T.Miyasak a
K.Yamada
T.Fu j ihira a
http://store.iiic.cc/
H04-004-06
R e v i s e d R e c o r d s
Date
Classi-
fication Ind. Content
Applied
date Drawn Checked Approved
enactment Issued
date
MS5F 5291 2
14
Oct.-23-’02
Nov.-29-’02 Revision a Revised Reliability test
conditions (P7/14) Y. K o b a y a s h i
T.Miyasak a
K.Yamada
T. Fu j ihi ra
T. Fu j ihi ra
T.Miyasak a
K.Yamada
a
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MS5F 5291 3
2MBI200TA-060
2. Equivalent circuit
1. Outline Drawing ( Unit : mm )
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3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）
Items Symbols Conditions Maximum
Ratings Units
Collector-Emitter voltage VCES Ic=1mA 600 V
Gate-Emitter voltage VGES ±20 V
Ic Duty=100 % 200
Collector current Ic pulse 1ms 400 A
IF Duty=50 % 200
IF pulse 1ms 400
Collector Power Dissipation Pc 780 W
Junction temperature Tj 150 ℃
Storage temperature Tst g -40~ +125 ℃
Isolation voltage
(*1)
Viso AC : 1min. 2500 V
Screw Torque Mounting
(*2)
3.5 N
m
Terminals
(*2)
3.5
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminal 2.5~ 3.5Nm (M5)
4. Electrical characteristics ( at Tj= 25℃　 unless otherwise specified)
Characteristics
Items Symbols Conditions min. typ. Max. Units
Zero gate voltage
Collector current
I
CES
V
GE
= 0 V, V
CE
= 600 V - - 2.0 mA
Gate-Emitter leakage current I
GES
V
CE
= 0 V, V
GE
= ±20 V - - 400 nA
Gate-Emitter
threshold voltage V
GE(th)
V
CE
= 20 V, Ic = 200 mA 6.2 6.7 7.7 V
Collector-Emitter
VC E( s at)
V
GE
= 15 V Chip - 1.6 - V
saturation voltage Ic = 200 A Terminal - 1.8 2.4
Input capacitance Cies
VGE =
0 V - 20000 -
Output capacitance Coes V
CE
= 10 V - 3600 - pF
Reverse transfer capacitance Cres f = 1 MHz - 3100 -
ton Vcc = 300 V - 0.6 1.2
Turn-on t ime tr Ic = 200 A - 0.3 0.6
tr
(i)
V
GE
= ±15 V - 0.1 - μs
Turn-off t ime toff R
G
= 16 - 0.6 1.2
tf - 0.05 0.45
Forward on voltage V
F
I
F
= 200 A Chip - 1.75 - V
Terminal - 2.0 2.5
Reverse recovery time trr IF = 200 A - - 0.3 μs
Allowabe avalanche energy
during short circuit cutting off P
AV
Ic > 400A, Tj = 125℃ 140 - - mJ
(Non-repetitive)
5. Thermal resistance characteristics
Characteristics
Items Symbols Conditions min. typ. Max. Units
Thermal resis tanc e R
th(j-c)
IGBT - - 0.160
(1 device) FWD - - 0.51 ℃/Ｗ
Contact Thermal resistance R
th(c-f)
With thermal compound
※
- 0.025 -
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
1 device
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6. Indication on module
9. Definitions of switching time
L
Vcc
Ic
V
CE
R
G
V
GE
V
GE
V
CE
Ic
0V
0A
0V
10%
90%
10% 10%
90%
90%
0V
Ic
V
CE
～
～
～
～
～
～
on
t
r
t
r(i)
t
off
t
f
t
rr
I
rr
t
7. Applicable category
This s pecific ation is applied to IGBT Module named 2MBI200TA-060
8. Storage and transportation notes
・The module s hould be st ored at a standard t emperature of 5 to 35Ｃ and
humidity of 45 to 75% .
・Store modules in a place with few temperature changes in order to avoid
condensation on the module surface.
・Avoid exposure to corrosive gases and dust.
・Avoid excessive external force on the module.
・Store modules with unprocessed terminals.
・Do not drop or otherwise shock the modules when tranporting.
2MBI200TA-060
200A 600V
Lot No. Place of manufucturing
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11. UL recognition
This products is recognized by Underwriters Laboratories Inc., the file No. is E82988.
12. Packing and Labeling
Display
Display on the packing box
- Logo of production
- Type name
- Lot No.
- Products quantity in a packing box
* Each modules are packed with electrical protection.
Packing box
10. Definition of the allowable avalance energy during short circuit cutfing of.
-VCEP
1
2
VCE
×VCEP×ICP×tf(SC)
-ICPIC
tf(SC)
PAV=
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MS5F 5291
13. Reliability test results
7
Reliability Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ
ED-4701
Number
of sample
Ac c ept-
ance
number
1 Terminal Strength Pull force :
a
40N A - 111 5 ( 1 : 0 )
(Pull test) Test time : 10±1 sec. Method 1
2 Mounting Strength Screw torque : 2.5 ~ 3.5 N･m (M5) A - 112 5 ( 1 : 0 )
Test time : 10±1 sec. Method 2
3 Vibration Range of frequency : 10 ~ 500Hz A - 121 5 ( 1 : 0 )
Sweeping time : 15 min.
Acceleration :
a
10G
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
4 Shock Maxim um ac c eleration : 1000G A - 122 5 ( 1 : 0 )
Pulse width : 0.5msec.
Direction : Each X,Y,Z axis
Test time : 3 times/direction
1 High Temperature Storage temp. : 125±5 ℃ B - 111 5 ( 1 : 0 )
Storage Test duration : 1000hr.
2 Low Temperature Storage temp. : -40±5 ℃ B - 112 5 ( 1 : 0 )
Storage Test duration : 1000hr.
3 Temperature Storage temp. : 85±3 ℃ B - 121 5 ( 1 : 0 )
Humidity Relative humidity : 85±5%
Storage Test duration : 1000hr.
4 Unsaturated Test temp. : 121 ℃ B - 123 5 ( 1 : 0 )
Pressure Cooker
Atmospheric pressure : 2.03×10
5
Pa
(Reference value)
Test duration : 20hr.
5 Temperature
+3
B - 131 5 ( 1 : 0 )
Cycle Test temp. : Low temp. -40
-5
℃
+5
High temp. 125
-5
℃
RT 5 ~ 35 ℃
Dwell time : High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles : 100 cycles
6 Thermal Shock
+0
B - 141 5 ( 1 : 0 )
Test temp. : High temp. 100
-5
℃
+5
Low temp. 0
-0
℃
Used liquid : Water with ice and
a
boiling water
Dipping time : 5 min. par each temp.
Transfer time : 10 sec.
Number of cycles : 10 cycles
Mechanical Tests
Environment Tests
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Failure Criteria
Item Characteristic Symbol Failure criteria Unit Note
Lower limit Upper limit
Electrical Leakage current ICES - USL×2 mA
characteristic ±IGES - USL×2 A
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage VCE(s at) - USL×1.2 V
Forward voltage VF - USL×1.2 V
Thermal IGBT VGE - USL×1.2 mV
resistance or VCE
FWD VF - USL×1.2 mV
Is olation voltage Viso Broken insulation -
Visual Vis ual ins pection
inspection Peeling - The visual sample -
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
completely before the measurement.
Reliability Test Items
Test
cate-
gories
Test items Test methods and conditions
Reference
norms
EIAJ
ED-4701
Number
of sample
Accept-
ance
number
1 High temperature
+0
D - 313 5 ( 1 : 0 )
Reverse Bias Test temp. : Ta = 125
-5
℃
(Tj ≦ 150 ℃)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
2 High temperature
+0
D - 323 5 ( 1 : 0 )
Bias Test temp. : Ta = 125
-5
℃
(Tj ≦ 150 ℃)
Bias Voltage : VC = VGE = +20V or -20V
Bias Method : Applied DC voltage to G-E
VCE = 0V
Test duration : 1000hr.
3 Temperature B - 121 5 ( 1 : 0 )
Humidity Bias Test temp. : 85 +-3
o
C
Relative humidity : 85 +-5%
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
4 Intermitted ON time : 2 sec. D - 322 5 ( 1 : 0 )
Operating Life OFF time : 18 sec.
(Power cycle) Test temp. : Tj=100±5 deg
( for IGBT ) Tj ≦ 150 ℃, Ta=25±5 ℃
Number of cycles : 15000 cycles
Endurance Tests
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Reliability Test Results
Test
cate-
gories
Test items
Reference
norms
EIAJ ED-4701
Number
of test
sample
Num ber
of failure
sample
1 Terminal Strength A - 111 5 0
(Pull test) Method 1
2 Mounting Strength A - 112 5 0
Method 2
3 Vibration A - 121 5 0
4 Shock A - 122 5 0
1 High Temperature Storage B - 111 5 0
2 Low Temperature Storage B - 112 5 0
3 Temperature Humidity B - 121 5 0
Storage
4 Unsaturated B - 123 5 0
Pressure Cooker
5 Temperature Cycle B - 131 5 0
6 Thermal Shock B - 141 5 0
1 High temperature Reverse Bias D - 313 5 0
2 High temperature Bias D - 323 5 0
( for gate )
3 Temperature Humidity Bias B - 121 5 0
4 Intermitted Operating Life D - 322 5 0
(Power cycling)
( for IGBT )
Mechanical Tests
Environment Tests
Endurance Tests
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MS5F 5291 10
0 1 2 3 4 5
0
100
200
300
400
500
600
8V
10V
12V
1 5V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
0 1 2 3 4 5
0
100
200
300
400
500
600
8V
10V
12V
1 5V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
0 1 2 3 4
0
200
400
600
Tj= 25C Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10 15 20 25
0
2
4
6
8
10
12
Ic=100A
Ic=200A
Ic=400A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
5 00
1000
5000
10000
50000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 200 400 600 800 1000 1200 1400
0
100
200
300
400
500
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=200A, Tj= 25C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
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0 100 200 300 400
1 0
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=16ohm, Tj= 25C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ]
0 100 200 300 400
1 0
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 16ohm, Tj= 125C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1 10 80
1 0
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=200A, VGE=+-15V, Tj= 25C
Gate resistance : Rg [ ohm ]
Switching time : ton, tr, toff, tf [ nsec ]
0 200 400
0
10
20
30
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=16ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
10 100 300
0
10
20
30
40
50
60
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=200A, VGE=+-15V, Tj= 125C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0 200 400 600 800
0
100
200
300
400
500
600
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=16ohm, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
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0 1 2 3
0
100
200
300
400
Tj=25C
Tj=125C
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0 100 200 300 400
3 0
100
300
Irr(125C)
Irr(25C)
trr(25C)
trr(125C)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=+-15V, Rg=16ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001 0.01 0.1 1
1 E-3
0.01
0.1
1
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
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Warnings
- This product shall be used within its abusolute maximun rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。
絶対最大定格を超えて使用すると、素子が破壊する場合があります。
- Conect adequate fuse or protector of circuit between three-phase line and this product to prevent
the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて２次破壊を防いでください。
-Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
-If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。
-Use this product within the power cycle curve(Thechnical Rep.No:MT6M4057)
本製品は、パワーサイクル寿命カーブ以下で使用下さい（技術資料No.:MT6M4057）
-Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact probrem.
主端子及び制御端子に応力を与えて変形させないで下さい。　端子の変形により、接触不良などを引き起こす場合
があります。
-According to the outline drawing, select proper length of screw for main terminal.
Longer screws may break the case.
本製品に使用する主端子用のネジの長さは、外形図に従い正しく選定下さい。　
ネジが長いとケースが破損する場合があります。
-Use this product with keeping the cooling fin's flatness between screw holes within 100um and the
rouphness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a cirtical accident.
冷却フィンはネジ取り付け位置間で平坦度を
100um
以下、表面の粗さは
10um
以下にして下さい。　誤った取り扱
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。
-It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。
-If excessive static electricity is applied to the control terminals, the devices can be broken.
Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。
取り扱い時は静電気対策を実施して下さい。
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Cautions
-Fuji Electric is constantly making every endeavor to improve the product quality and reliability.　However,
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
富士電機は絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計
など安全確保のための手段を講じて下さい。
-The application ex amples desc ribed in this s pecification only explain t ypical ones that used the Fuji Elec tric
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
-The product described in this specification is not designed nor made for being applied t o the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine ralaying equipment or systems,　please apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
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