V30DL45
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Revision: 15-Mar-2019 1Document Number: 87788
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Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Note
(1) With heatsink
PRIMARY CHARACTERISTICS
IF(AV) 30 A
VRRM 45 V
IFSM 240 A
VF at IF = 30 A (TA = 125 °C) 0.51 V
TJ max. 150 °C
Package SMPD (TO-263AC)
Circuit configuration Single
Top View Bottom View
Anode 1
Anode 2
K
Cathode
eSMP® Series
SMPD (TO-263AC)
K
1
2
3
3
D
D
3
D
3D Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V30DL45 UNIT
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum average forward rectified current (fig. 1) IF(AV) (1) 30 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 200 A
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
V30DL45
www.vishay.com Vishay General Semiconductor
Revision: 15-Mar-2019 2Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 5 ms
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA
(2) Free air, without heatsink
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 5 A
TA = 25 °C
VF (1)
0.39 -
V
IF = 15 A 0.47 -
IF = 30 A 0.57 0.65
IF = 5 A
TA = 125 °C
0.28 -
IF = 15 A 0.38 -
IF = 30 A 0.51 0.60
Reverse current VR = 45 V TA = 25 °C IR (2) -3000μA
TA = 125 °C 27 70 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V30DL45 UNIT
Typical thermal resistance RJC 1.1 °C/W
RJA (1)(2) 45
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V30DL45-M3/I 0.54 I 2000/reel 13" diameter plastic tape and reel
V30DL45HM3_A/I (1) 0.54 I 2000/reel 13" diameter plastic tape and reel
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C)
RthJA = 45 °C/W
RthJA = RthJC = 1.1 °C/W
0
2
4
6
8
10
12
14
16
18
20
22
0 4 8 12 16 20 24 28 32 36
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
T
D = tp/T tp
V30DL45
www.vishay.com Vishay General Semiconductor
Revision: 15-Mar-2019 3Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
TA = 150 °C
TA = 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
V30DL45
www.vishay.com Vishay General Semiconductor
Revision: 15-Mar-2019 4Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.059 (1.50) REF.
0.339 (8.60)
0.323 (8.20)
0.063 (1.60)
0.047 (1.20)
0.048 (1.21)
0.032 (0.81)
0.020 (0.52)
0.011 (0.27)
0.071 (1.80)
0.063 (1.60)
0.069 (1.74)
0.053 (1.34)
0.020 (0.52)
0.011 (0.27)
0.052 (1.23)
0.028 (0.72)
0.276 (7.00)
0.260 (6.60)
Mounting Pad Layout
0.420 (10.66) MIN.
0.080 (2.03) MIN.
0.120 (3.05) REF.
0.105 (2.67)
0.095 (2.41)
SMPD (TO-263AC)
NOM.
0.194
(4.93)
NOM.
0 to 0.01
(0 to 0.254)
REF.
0.330
(8.38)
0.604 (15.33)
0.525 (13.33)
0.200
(5.08)
0.354 (8.99)
0.338 (8.59) 0.509 (12.93)
0.485 (12.33)
0.402 (10.20)
0.386 (9.80)
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Revision: 01-Jan-2019 1Document Number: 91000
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