T4 Series
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Table 3: Absolute Maximum Ratings
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine
wave)
IPAK/DPAK/
TO-220AB Tc = 110°C
4A
ISOWATT220AB Tc = 105°C
ITSM Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31
I²tI
²t Value for fusing tp = 10 ms 5.1 A²s
dI/dt Critical rate of rise of on-state cur-
rent IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4A
PG(AV) Average gate power dissipation Tj = 125°C 1W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125 °C
Symbol Test Conditions Quadrant T4 Unit
T405 T410 T435
IGT (1)
VD = 12 V RL = 30 ΩI - II - III MAX. 5 10 35 mA
VGT I - II - III MAX. 1.3 V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125°C I - II - III MIN. 0.2 V
IH (2) IT = 100 mA MAX. 10 15 35 mA
ILIG = 1.2 IGT
I - III MAX. 10 25 50 mA
II 15 30 60
dV/dt (2) VD = 67 %VDRM gate open
Tj = 125°C MIN. 20 40 400 V/µs
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs Tj = 125°C
MIN.
1.8 2.7 -
A/ms
(dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 -
Without snubber Tj = 125°C --2.5
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.