2016-04-11 2
Version 1.4 KOM 2125
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 80 °C
Reverse voltage VR60 V
Total Power dissipation Ptot 150 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Parameter Symbol Values Unit
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V; Diode A)
(typ (min)) IP40 (≥ 30) µA
Photocurrent
(VR = 5 V, Ee = 1 mW/cm2 , λ = 870 nm, Diode B)
(typ (min)) IP100 (≥ 75) μA
Wavelength of max. sensitivity (typ) λS max 850 nm
Spectral range of sensitivity (typ) λ10% (typ) 400
... 1100
nm
Radiant sensitive area
(Diode A)
(typ) A 4.00 mm2
Radiant sensitive area
(Diode B)
(typ) A 10.00 mm2
Dimensions of radiant sensitive area
(Diode A)
(typ) L x W 2 x 2 mm x
mm
Dimensions of radiant sensitive area
(Diode B)
(typ) L x W 2 x 5 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(VR = 10 V; Diode A)
(typ (max)) IR5 (≤ 30) nA
Dark current
(VR = 10 V; Diode B)
(typ (max)) IR10 (≤ 30) nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ) Sλ typ 0.62 A / W
Quantum yield of the chip
(λ = 870 nm)
(typ) η 0.88 Electro
ns
/Photon
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
(typ (min)) VO350 (≥ 300) mV
Short-circuit current
(Ev = 1000 lx, Std. Light A; Diode A)
(typ) ISC 38 µA