AO8801A
20V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -4.5A
R
DS(ON)
(at V
GS
= -4.5V) < 42mΩ
R
DS(ON)
(at V
GS
= -2.5V) < 54mΩ
R
DS(ON)
(at V
GS
= -1.8V) < 68mΩ
ESD Protected
Symbol
V
DS
Drain-Source Voltage
-20
V
-20V
The AO8801A uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Maximum Units
D2
G2
G1
S1
S1
D1
Top View
1
2
3
4S2
S2
8
7
6
5
S1
G1
D1
S2
G2
D2
TSSOP8
Top View Bottom View
Pin 1
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead 64 83 °C/W
Maximum Junction-to-Ambient
R
θJA
63 83 °C/W
Maximum Junction-to-Ambient
A D
101 130 °C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
Parameter Typ Max Units
Power Dissipation
B
T
A
=25°C P
D
1.5 W
T
A
=70°C 0.96
Continuous Drain
Current T
A
=25°C I
D
-4.5 A
T
A
=70°C -3.6
Pulsed Drain Current
C
-30
Drain-Source Voltage
-20
V
Gate-Source Voltage ±8 V
Rev 1: Sep 2011
www.aosmd.com Page 1 of 5
AO8801A
Symbol Min Typ Max Units
BV
DSS
-20 V
V
DS
=-20V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage -0.3 -0.57 -0.9 V
I
D(ON)
-30 A
35 42
T
J
=125°C 49 59
43 54 mΩ
54 68 mΩ
g
FS
20 S
V
SD
-0.64 -1 V
I
S
-2 A
C
iss
600 751 905 pF
C
oss
80 115 150 pF
C
rss
48 80 115 pF
R
g
6 13 20 Ω
Q
g
7.4 9.3 11 nC
Q
gs
0.8 1 1.2 nC
Q
gd
1.3 2.2 3.1 nC
t
D(on)
13 ns
t
9
ns
I
DSS
Zero Gate Voltage Drain Current µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
Gate-Body leakage current V
DS
=0V, V
GS
= ±8V
V
DS
=V
GS
, I
D
=-250µΑ
On state drain current V
GS
=-4.5V, V
DS
=-5V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-4.5A mΩ
V
GS
=-2.5V, I
D
=-4A
V
GS
=-1.8V, I
D
=-3A
Forward Transconductance V
DS
=-5V, I
D
=-4.5A
Diode Forward Voltage I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance V
GS
=0V, V
DS
=-10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge V
GS
=-4.5V, V
DS
=-10V, I
D
=-4.5A
Gate Source Charge
Gate Drain Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On DelayTime
V
=-4.5V, V
=-10V, R
=2.2
Ω
,
Turn-On Rise Time
t
r
9
ns
t
D(off)
19 ns
t
f
29 ns
t
rr
20 26 32 ns
Q
rr
40 51 62 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=-4.5A, dI/dt=500A/µs
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.2
Ω
,
R
GEN
=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time I
F
=-4.5A, dI/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 1: Sep 2011 www.aosmd.com Page 2 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
3
6
9
12
15
0 0.5 1 1.5 2
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
30
40
50
60
70
80
0246810
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.80
1.00
1.20
1.40
1.60
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
25°C
125°C
V
DS
=-5V
VGS=-1.8V
VGS=-4.5V
0
5
10
15
20
25
30
35
40
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-1.5V
-2.0V
-
4.5V
-
8V
-2.5V
-3.0V
VGS=-2.5V
ID=-4.5A, VGS=-4.5V
ID=-4A, VGS=-2.5V
ID=-3A, VGS=-1.8V
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125
°
C
(Note E)
20
40
60
80
100
120
02468
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=-4.5A
25°C
125°C
Rev 1: Sep 2011 www.aosmd.com Page 3 of 5
AO8801A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
1
2
3
4
5
0 2 4 6 8 10 12
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
1200
1400
0 5 10 15 20
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-10V
ID=-4.5A
0
10
20
30
0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
10ms
100ms
TJ(Max)=150°C
TA=25°C
Ambient (Note F)
Operating Area (Note F)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=130°C/W
T
on
T
P
D
Rev 1: Sep 2011 www.aosmd.com Page 4 of 5
AO8801A
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
rr
Q = - Idt
t
rr
-Isd
F
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Ig
Vgs
-
+
VDC
Isd
dI/dt
RM
Vdd
Vdd
-Vds
-I
Rev 1: Sep 2011
www.aosmd.com
Page 5 of 5