AO8801A 20V P-Channel MOSFET General Description Product Summary The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -20V -4.5A RDS(ON) (at VGS= -4.5V) < 42m VDS RDS(ON) (at VGS= -2.5V) < 54m RDS(ON) (at VGS= -1.8V) < 68m ESD Protected Top View D1 TSSOP8 Bottom View D2 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 G2 S1 S2 Pin 1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 1: Sep 2011 Steady-State Steady-State A 1.5 W 0.96 TJ, TSTG Symbol t 10s V -30 PD TA=70C 8 -3.6 IDM TA=25C Units V -4.5 ID TA=70C Maximum -20 RJA RJL www.aosmd.com -55 to 150 Typ 63 101 64 C Max 83 130 83 Units C/W C/W C/W Page 1 of 5 AO8801A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250A, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= 8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250 -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -30 TJ=55C -5 10 A V 35 42 49 59 VGS=-2.5V, ID=-4A 43 54 m VGS=-1.8V, ID=-3A 54 68 m 20 TJ=125C Forward Transconductance VDS=-5V, ID=-4.5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge A -0.9 gFS Crss Units -0.57 VGS=-4.5V, ID=-4.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-4.5A A -0.64 m S -1 V -2 A 905 pF 600 751 80 115 150 pF 48 80 115 pF 6 13 20 7.4 9.3 11 nC 0.8 1 1.2 nC 1.3 2.2 3.1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=500A/s 20 26 32 Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/s 40 51 62 VGS=-4.5V, VDS=-10V, RL=2.2, RGEN=3 13 ns 9 ns 19 ns 29 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Sep 2011 www.aosmd.com Page 2 of 5 AO8801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 -8V 15 -4.5V VDS=-5V 35 -3.0V 12 30 -2.5V 9 -ID(A) -ID (A) 25 20 -2.0V 15 10 3 5 125C 25C VGS=-1.5V 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 80 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 1.60 70 VGS=-1.8V RDS(ON) (m ) 6 60 50 VGS=-2.5V VGS=-4.5V 40 30 ID=-4.5A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-3A, VGS=-1.8V 1.00 0.80 20 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 120 1.0E+01 ID=-4.5A 1.0E+00 100 -IS (A) RDS(ON) (m ) 1.0E-01 80 60 125C 125C 25C 1.0E-02 1.0E-03 40 1.0E-04 25C 1.0E-05 20 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: Sep 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO8801A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 5 VDS=-10V ID=-4.5A 1200 Capacitance (pF) -VGS (Volts) 4 3 2 1000 Ciss 800 600 400 Coss 1 200 Crss 0 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 TJ(Max)=150C TA=25C 10.0 RDS(ON) limited 100s 1ms 1.0 10ms 20 10 100ms DC 0.1 Power (W) 10s -ID (Amps) 20 10s TJ(Max)=150C TA=25C 0 0.0 0.001 0.01 0.1 1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=130C/W 1 0.1 PD Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: Sep 2011 www.aosmd.com Page 4 of 5 AO8801A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge R esistive Sw itching Test C ircuit & W aveform s RL V ds t o ff to n Vgs - DUT Vgs V DC td(o n) t d(o ff) tr tf 90% V dd + Rg V gs 10% V ds D iode R e covery Te st C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs Vds Isd V gs Ig Rev 1: Sep 2011 L -Isd + V dd t rr dI/dt -I R M V dd VDC - -I F -Vds www.aosmd.com Page 5 of 5