SPEC NO: DSAM9669 REV NO: V.1A DATE: APR/20/2013 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301000176
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25° C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA Description
Min. Typ.
SA10-21YWA Yellow (GaAsP/GaP) White Diffused
9000 23000
*3600 *7000
Common Anode,
Rt.Hand Decimal
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Yellow 590 nm IF=20mA
λD [1] Dominant Wavelength Yellow 588 nm IF=20mA
Δλ1/2 Spectral Line Half-width Yellow 35 nm IF=20mA
C Capacitance Yellow 20 pF VF=0V;f=1MHz
VF [2] Forward Voltage
(DP) Yellow 4.2
(2.1)
5.0
(2.5) V IF=20mA
IR Reverse Current
(Per chip) Yellow
10
(10) uA VR=5V
(VR=5V)
Parameter Yellow Units
Power dissipation
(DP)
150
(75) mW
DC Forward Current 30 mA
Peak Forward Current [1] 140 mA
Reverse Voltage
(Per chip)
5
(5) V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds