NJM2800
Low Dropout Voltage Regulator with Reset
GENERAL DISCRIPTION PACKAGE OUTLINE
The NJM2800 is a low dropout voltage regulator with
reset function.
It provides up to 150mA of logic supply, and the reset
function monitors input voltage of the regulator with 1%
accuracy.
It is suitable for local power supply and reset for small
micro controller and other logic chips.
FEATURES
z Output Voltage Accuracy Vo = ±1.0%
z Reset Voltage Accuracy V
RT
= ±1.0%
z Adjust reset delay time with external capacitor.
z Ripple Rejection 60dB typ. (f=1kHz)
z Input Voltage Monitor type
z Open Collector Output
z Internal Short Circuit Current Limit
z Internal Thermal Overload Protection
z Bipolar Technology
z Package Outline SOT89-5 (NJM2800U/U1), SOT-23-5(NJU2800F)
PIN CONFIGURATION
OUTPUT VOLTAGE/ DETECTION VOLTAGE
Device Name Output Voltage Detection Voltage
NJM2800U1-/U/F1803 1.8V 3.0V
NJM2800U1-/F2528 2.5V 2.8V
NJM2800U1-/U/F3342 3.3V 4.2V
EQUIVALENT CIRCUIT
NJM2800F NJM2800U/U1
1.V
OUT
2.GND
3.C
d
4.V
OR
5.V
IN
1.V
IN
2.GND
3.V
OR
4.C
d
5.V
OUT
NJU2800F NJU2800U/U1
1
2
3
4
5
123
452
V
OUT
GND
V
IN
Thermal
Protection
Bandgap
Reference
Cd
V
OR
NJM2800
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Input Voltage V
IN
+14 V
350(*1)
SOT-23-5 200(*2)
Power Dissipation P
D
SOT89-5 350(*2)
mW
Operating Temperature Topr
−
40∼+85 °C
Storage Temperature Tstg
−
40∼+125 °C
(*1): Mounted on glass epoxy board based on EIA/JEDEC. (114.3x76.2x1.6mm: 2Layers)
(*2): Device itself.
Operating voltage
V
IN
=+2.3 ∼ +14V (In case of Vo<2.1V version)
ELECTRICAL CHARACTERISTICS
(V
IN
=Vo+1V, C
IN
=0.1µF, Co=1µF
(1.8<Vo≤2.6V: Co=2.2
µ
F, Vo≤1.8V: Co=4.7
µ
F)
,Ta=25°C)
PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Quiescent Current I
Q
V
IN
=Vo+2V, Io=0mA −250 350
µ
A
Regulator Block
Output Voltage Vo Io=30mA −1.0% − +1.0% V
Output Current Io Vo-0.3V 150 200
− mA
Line Regulation ∆Vo/∆V
IN
V
IN
=Vo+1V∼Vo+6V, Io=30mA − − 0.10 %/V
Load Regulation ∆Vo/∆Io Io=0∼100mA − − 0.03 %/mA
Dropout Voltage(*3) ∆V
I_O
Io=60mA − 0.10 0.18 V
Ripple Rejection RR ein=200mVrms,f=1kHz,Io=10mA,
Vo=3V Version − 60 − dB
Output Voltage
Temperature Coefficient ∆Vo/∆T Ta=0∼85°C, Io=10mA − ±50 − ppm/°C
Output Noise Voltage V
NO
f=10Hz∼100kHz, Io=10mA,
Vo=3V Version − 45 − µVrms
Reset Block
Voltage Detection V
RT
V
IN
=H→L −1.0% − +1.0% V
Hysteresis Voltage V
RTH
V
IN
=H→L→H V
RT
×3
%
V
RT
×5
%
V
RT
×8
%
V
Low Level Output R
ORL
V
IN
=V
RT
-0.5V, R
L
=100kΩ − 100 300 mV
Output Leak Current I
ORH
V
IN
= V
RT
+0.5V − − 0.1 µA
On time Output Current I
ORL
V
IN
=V
RT
-0.5V, R
L
=0Ω 5 − − mA
Reset Output Delay t
d
V
IN
=(V
RT
-0.5V)→ (V
RT
+0.5V), C
d
=0.1µF9 10 11 ms
Operation Voltage Limit V
OPL
V
ORL
=0.4V − 0.9 − V
(*3): The output voltage excludes under 2.1V.
The above specification is a common specification for all output voltages.
Therefore, it may be different from the individual specification for a specific output voltage.
NJM2800
TIMING CHART
∗ V
OR
is the case where a pull-up is carried out to V
IN
through resistance.
V
RT
V
O
V
O
V
OR
[V]
V
O
[V]
V
IN
[V]
V
RTH
t
d
t
t
t
t
d
t
d
NJM2800
*4 1.8V<Vo≤2.6V: Co=2.2µF (Ceramic)
Vo≤1.8V: Co=4.7µF (Ceramic)
*5 1.8V<Vo≤2.6V: Co=2.2µF
Vo≤1.8V: Co=4.7µF
TEST CIRCUIT
TYPICAL APPLICATIONS
POWER DISSIPATION vs. AMBIENT TEMPERATURE
NJM2800
V
IN
V
O
C
d
V
OR
GND
V
OUT
100kΩ
0.1µF
0.1
µ
F
V
IN
V
OR
NJM2800
V
IN
V
O
C
d
V
OR
GND
V
OUT
I
OUT
V
R
L
V
0.1
µ
F
0.1
µ
F
V
IN
I
Q
V
OR
I
OR
NJM2800F Power Dissipation
(Topr=-40～+85℃,Tj=125℃)
0
100
200
300
400
500
-50 -25 0 25 50 75 100
Ambient Temperature Ta(℃)
P
ower
Di
ss
i
pat
i
on
P
D
(
m
W)
Device itself
On Board(114.3×76.2×1.6mm, FR-4)
1.0µF*4
(Ceramic)
1.0µF*5
NJM2800
ELECTRICAL CHARACTERISTICS
3
3.1
3.2
3.3
3.4
3.5
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7
Out pu t Vol tag e : Vo(V )
Input Voltage : V
IN
(V)
NJM2800_3.3V
O utput Volt age vs. I npu t Volt a ge
@:Ta=25
o
C
Co=1µF
(Ceramic)
Cd=0.1µF
Io=0A
Io=30mA
Io=100mA
0
0.5
1
1.5
2
2.5
3
3.5
4
0 50 100 150 200 250 300
NJM2800_3.3V
O ut pu t Volt age vs. O utput Curre nt
Out pu t Vo ltage : V o [ V]
Output Current :Io [mA]
@:Ta=25
o
C
V
IN
=4.3V
Co=1.0µF(Ceramic)
0
5
10
15
20
0 50 100 150 200
Ground Pin Curren t : I
GND
(mA)
NJM2800_3.3V
Ground Pi n Cu rren t v.s. Output C urrent
@:Ta=25
o
C
V
IN
=4 .3V
Co=1.0µF
(Ceramic)
Cd=0.1µF
Output Current : I
O
(mA)
0
0.05
0.1
0.15
0.2
0.25
0.3
0 50 100 150 200
Output Current:Io(mA)
@:Ta=25
o
C
Co=1µF(Ceramic)
Cd=0.1µF
Dropout Vo ltage: dV
I-O
(V)
NJM2800_3.3V
Dro po ut Vol tage vs. Out put Cu r rent
-50
-40
-30
-20
-10
0
0 50 100 150 200
Load Re gula ti on : dVo /dI o(mV)
Output Current : Io(mA)
NJM2800_3.3V
Loa d Re gulation vs. Output Current
@:Ta=25
o
C
V
IN
=4.3V
Co=1µF(Ceramic)
Cd=0.1µF
0
50
100
150
200
250
300
6 8 10 12 14
Peak Outpu t Current : Io
MAX
(mA)
NJM2800_3.3V
Peak Out p ut Curr en t vs. I nput Voltage
@: Ta =2 5
o
C
Co=1µF(Ceramic)
Cp=0.01µF
Inpu t Voltage : V
IN
(V)
NJM2800
ELECTRICAL CHARACTERISTICS
0
500
1000
1500
2000
0 5 10 15
Q ui e sc en t Cur r en t : I
Q
(µ
µ
µ
µA)
NJM2800_3.3V
Qui e scen t Cu r r ent v.s. I n p ut V olt a ge1
@: Ta =2 5
o
C
Output is open.
Co=1.0µF(Ceramic)
Inpu t Voltage : V
IN
(V)
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100
Output Current : Io(mA)
Out put No ise Vo ltage : V n(
µ
µ
µ
µ
Vrms)
NJM2800_3.3V
O utput Nois e Vol tage vs. Outp u t Current
Co =2 .2µF
(Cer am ic )
@: Ta =2 5
o
C
V
IN
=4 .3 V
Cd=0.1µF
LPF:100kHz
Co =1 .0µF
(Ceramic)
20
30
40
50
60
70
80
90
100
Ripple Rejection Ratio : RR (dB)
Frequ e ncy : f (Hz)
NJM2800_3.3V
Rip p le Rejectio n Rati o v.s. Fr equen cy
Io=0mA
Io=10mA
Io=30mA
@:Ta=25
o
C
V
IN
=4.3V
ein=200mVrms
Co=1µF(Ceramic)
Cd=0.1µF
10 100 1k 10k 100k
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10 100
Ri pple Rej e ction Rati o : R R (d B)
Output Current : Io (mA)
NJM2800_3.3V
Ripple Rejection Ratio v.s. Ou t pu t Current
@:Ta=25
o
C
Co=1.0µF(Ceramic)
Cd=0.1µF
V
IN
=4.3V
ein=200mVrms
f=1kHz
f=10kHz
0.1
1
10
100
1µ10µ100µ1m 10m 100m
0.02
Output Current : Io(mA)
@:Ta=25
o
C
V
IN
=4.3V
Co=1.0µF(Ceramic)
Eq uiva lent Seri se Resis tance : ES R(
Ω
Ω
Ω
Ω
)
NJM2800_3.3V
Equi va len t S erise Resist ance vs. Out put Curren t
STABL E RE GION
NJM2800
ELECTRICAL CHARACTERISTICS
0
0.05
0.1
0.15
0.2
0.25
0.3
-50 0 50 100 150
Temperature : Ta (
o
C)
@:V
IN
=4.3V
Io=60mA
Co=1µF(Ceramic)
NJM2800_3.3V
Dro pout Vo l tage v.s. Te m p e ra t u r e
Dropout Vo ltage: dV
I-O
(V)
3.2
3.25
3.3
3.35
3.4
-50 0 50 100 150
Out pu t Volt age :V o [V ]
Temperature : Ta[
o
C]
V
IN
=4.3V
Io=30mA
Co=1 µF
NJM2800_3.3V
Out put Vol tage vs . Temperature
0
50
100
150
200
250
300
-50 0 50 100 150
Q ui e sc en t Cur r en t : I
Q
(
µ
µ
µ
µ
A)
Temperature : Ta (
o
C)
NJM2800_3.3V
Quiescent Curr en t v.s. Te mperature
@:V
IN
=5 .3 V
Output is open.
Co=1µF(Ceramic)
-0.1
-0.05
0
0.05
0.1
-50 0 50 100 150
Line R e gu la tio n : dVo/dIo (%/V )
Temperature : Ta (oC)
NJM2800_3.3V
Li ne Regu l ation v. s. Te mpe ratu re
@:dV
IN
=4.3-9.3V
Io=30mA
Co=1.0µF(Ceramic)
0
0.005
0.01
0.015
0.02
0.025
0.03
-50 0 50 100 150
Load Regulation : dVo/dIo (%/mA)
Temperature : Ta (
o
C)
NJM2800_3.3V
L oad Reg ulati on v.s. T e mpera t u r e
@:V
IN
=4. 3V
Io=0-100mA
Co=1.0µF
(Ceramic)
0
20
40
60
80
100
-50 0 50 100 150
Short Circuit Current : I
SC
(mA)
Temperature : Ta (
o
C)
NJM2800_3.3V
Shor t Circuit Curr e nt v.s . Tem pe rat ur e
@:V
IN
=4.3V
Output is short to ground.
Co=1µF(Ceramic)
NJM2800
ELECTRICAL CHARACTERISTICS
0
0.025
0.05
0.075
0.1
-50 0 50 100 150
Output Leak Cur rent : I
ORH
(µ
µ
µ
µA)
T emper atu re : Ta(
o
C)
V
IN
=4.7V
Co=1µF
Cd=0.1µF
RL=100kΩ
NJM2800_3.3V/4.2V
Output Leak Current v.s T emper ature
0
25
50
75
100
-50 0 50 100 150
ON Output Cur rent : I
ORL
(mA)
V
IN
=3.7V
Co=1µF
Cd=0.1µF
RL=0Ω
NJM2800_3.3V/4.2V
ON Ou t p ut C u r r ent v. s Te m pe r a tu re
T emper atu re : Ta(
o
C)
0
5
10
15
20
-50 0 50 100 150
Reset Output D elay T ime : t
d
(ms)
V
IN
=3.7V->4.7V
Co=1mF
Cd=0.1mF
NJM2800_3.3V/4.2V
R es e t Ou tpu t De la y Time v. s Te mperature
Temperature : Ta(
o
C)
0
0.5
1
1.5
-50 0 50 100 150
Operation Voltage Limit : V
OPL
(V)
V
ORL
=0.4V
Co=1µF
Cd=0.1µF
NJM2800_3.3V/4.2V
Operation Voltage Limit v.s Temperature
Temperature:Ta(
o
C)
0
12.5
25
37.5
50
-50 0 50 100 150
Low L evel Output Voltag e : V
ORL
(mV)
V
IN
=3.7V
Co=1µF
Cd=0.1µF
RL=100kΩ
NJM2800_3.3V/4.2V
L ow Le vel Outpu t V oltage v.s Te mpera ture
T emper atu re : Ta(
o
C)
4
4.1
4.2
4.3
4.4
-50 0 50 100 150
Voltage Detection : V
RT
(V)
V
IN
=H->L
Co=1µF
Cd=0.1µF
NJM2800_3.3V/4.2V
Voltage Deteston v.s Temperature
Temperature : Ta(
o
C)
NJM2800
ELECTRICAL CHARACTERISTICS
0
100
200
300
400
-50 0 50 100 150
Hy steresis Voltage : V
RT
(mV)
V
IN
=H->L->H
Co=1µF
Cd=0.1µF
NJM2800_3.3V/4.2V
Hysteresis Voltage v.s Temperature
T emper atu re : Ta(
o
C)
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
