ESH1B, ESH1C, ESH1D
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Revision: 27-Mar-12 1Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters in
high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 100 V, 150 V, 200 V
trr 25 ns
VF0.90 V
TJ max. 175 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1B ESH1C ESH1D UNIT
Device marking code EHB EHC EHD
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Maximum RMS voltage VRMS 70 105 140 V
Maximum DC blocking voltage VDC 100 150 200 V
Maximum average forward rectified current at TL = 150 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method) IFSM 50 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
ESH1B, ESH1C, ESH1D
www.vishay.com Vishay General Semiconductor
Revision: 27-Mar-12 2Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) Units mounted on P.C.B. with 5.0 mm x 5.0 mm (0.013 mm thick) land areas
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward
voltage
IF = 0.7 A VF (1) 0.87 V
IF = 1 A VF0.90
Maximum DC reverse current at rated
DC blocking voltage
TA = 25 °C IR
1.0 µA
TA = 125 °C 25
Maximum reverse current VR = 20 V, TJ = 150 °C IR50 µA
Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A trr 25 ns
Typical reverse recovery time IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 25 °C trr
25 ns
TJ = 100 °C 35
Typical stored charge IF = 0.6 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
TJ = 25 °C Qrr
10 nC
TJ = 100 °C 15
Typical junction capacitance 4.0 V, 1 MHz CJ25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1B ESH1C ESH1D UNIT
Typical thermal resistance RJA (1) 85 °C/W
RJL (1) 30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
ESH1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
ESH1DHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel
ESH1DHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel
0
1.2
95 105 115 125 135 145 155 165
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
175
TL Measured
at the Cathode Band Terminal
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
110 100
10
40
20
50
30
0
ESH1B, ESH1C, ESH1D
www.vishay.com Vishay General Semiconductor
Revision: 27-Mar-12 3Document Number: 88890
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Reverse Leakage Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
100
10
0.1
0.01
0.001
1
20 40 60 80 100
Instantaneous Reverse Leakage
Current (µA)
T
J
= 175 °C
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.81.0
0.01
0.1
1
10
100
1.2 1.4
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C T
J
= 25 °C
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
1
0.1 101 100
1
10
100
0.01
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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