MMO62-12io6 Thyristor VRRM = 1200 V I TAV = 30 A VT = 1,28 V AC Controlling 1~ full-controlled Part number MMO62-12io6 Backside: isolated 2 3 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b MMO62-12io6 Ratings Rectifier Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 I R/D reverse current, drain current VT forward voltage drop TVJ = 25C 100 A 4 mA TVJ = 25C 1,29 V 1,60 V 1,28 V IT = 30 A IT = 60 A IT = 30 A IT = 60 A I RMS RMS forward current per phase 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing V TVJ = 125C TC = 95 C RthCH max. Unit 1300 V VR/D = 1200 V average forward current Ptot typ. VR/D = 1200 V I TAV It min. 1,68 V T VJ = 150 C 30 A 66 A TVJ = 150 C 0,87 V 13,6 m 0,9 K/W 0,20 K/W TC = 25C 140 W t = 10 ms; (50 Hz), sine TVJ = 45C 400 A t = 8,3 ms; (60 Hz), sine VR = 0 V 430 A t = 10 ms; (50 Hz), sine TVJ = 150 C 340 A t = 8,3 ms; (60 Hz), sine VR = 0 V 365 A t = 10 ms; (50 Hz), sine TVJ = 45C 800 As t = 8,3 ms; (60 Hz), sine VR = 0 V 770 As t = 10 ms; (50 Hz), sine TVJ = 150 C 580 As 555 As t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 150 C 22 t P = 300 s pF 10 W 5 W 0,5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 150 C; f = 50 Hz repetitive, IT = t P = 200 s; di G /dt = 0,3 A/s; 90 A IG = 30 A (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1,6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 150 mA VGD gate non-trigger voltage TVJ = 150C 0,2 V I GD gate non-trigger current 5 mA IL latching current TVJ = 25 C 150 mA 0,3 A; V = VDRM non-repet., I T = 100 A/s 500 A/s 1000 V/s TVJ = 150C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s IG = 0,3 A; di G /dt = 1,5 V 0,3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0,3 A; di G /dt = 0,3 A/s VR = 100 V; I T = 20 A; V = VDRM TVJ =125 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved 150 s 15 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b MMO62-12io6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 150 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1,1 1,5 Nm MT terminal torque 1,1 1,5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10,5 terminal to backside 8,6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3,2 mm 6,8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number MMO62-12io6 Equivalent Circuits for Simulation I V0 R0 Marking on Product MMO62-12io6 * on die level Delivery Mode Tube Code No. 459429 T VJ = 150 C Thyristor V 0 max threshold voltage 0,87 V R0 max slope resistance * 11,8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b MMO62-12io6 Outlines SOT-227B (minibloc) 2 3 1 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2015 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b MMO62-12io6 Thyristor 80 350 800 50 Hz, 80% VRRM VR = 0 V 300 60 600 TVJ = 45C 250 IT 2 It ITSM 40 [A] 2 200 [A s] [A] 20 TVJ = 45C 400 TVJ = 125C TVJ = 125C 200 125C 150C 150 TVJ = 25C 0 0,4 100 0,8 1,2 1,6 0 2,0 0,01 0,1 10 4 5 6 7 8 910 t [ms] 2 TVJ = 25C dc = 1 0.5 0.4 0.33 0.17 0.08 60 typ. 100 VG [V] 3 Fig. 3 I t versus time (1-10 ms) 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 3 1 2 Fig. 2 Surge overload current 1000 1: IGT, TVJ = 125C 1 t [s] VT [V] Fig. 1 Forward characteristics 1 5 2 1 Limit IT(AV)M 40 tgd 6 [A] [s] 4 10 20 4: PGAV = 0.5 W 0,1 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125C 1 10 100 1000 0 1 10 10000 IG [mA] Fig. 4 Gate trigger characteristics 100 0 1000 50 75 100 125 150 TC [C] IG [mA] Fig. 5 Gate controlled delay time 60 25 Fig. 6 Max. forward current at case temperature 1,0 dc = 1 0.5 0.4 0.33 0.17 0.08 50 40 P(AV) RthHA 0.4 0.6 0.8 1.0 2.0 4.0 30 0,8 0,6 ZthJC [W] 0,4 20 Rthi [K/W] [K/W] 0.076 0.134 0.460 0.230 0,2 10 0 0 10 20 30 40 IT(AV) [A] 0 50 100 150 Tamb [C] (c) 2015 IXYS all rights reserved 101 102 103 104 t [ms] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. 0,0 100 ti [s] 0.0005 0.019 0.124 0.450 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20150827b