1650A
PHASE CONTROL THYRISTORS Hockey Puk Version
ST1200C..K SERIES
1
Bulletin I25196 rev. B 01/00
www.irf.com
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
IT(AV) 1650 A
@ Ths 55 °C
IT(RMS) 3080 A
@ Ths 25 °C
ITSM @ 50Hz 30500 A
@ 60Hz 32000 A
I2t@
50Hz 4651 KA2s
@ 60Hz 4250 KA2s
VDRM/VRRM 1200 to 2000 V
tqtypical 200 µs
TJ- 40 to 125 °C
Parameters ST1200C..K Units
Major Ratings and Characteristics
case style A-24 (K-PUK)
ST1200C..K Series
2
Bulletin I25196 rev.B 01/00
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Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
IT(AV) Max. average on-state current 1650 (700) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 3080 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 30500 t = 10ms No voltage
non-repetitive surge current 32000 A t = 8.3ms reapplied
25700 t = 10ms 100% VRRM
26900 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 4651 t = 10ms No voltage Initial TJ = TJ max.
4250 t = 8.3ms reapplied
3300 t = 10ms 100% VRRM
3000 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 46510 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.73 V Ipk= 4000A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.91 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.21 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.19 (I > π x IT(AV)),TJ = TJ max.
Parameter ST1200C..K Units Conditions
1.01 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
ST1200C..K 100
ST1200C..K Series
3
Bulletin I25196 rev.B 01/00
www.irf.com
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST1200C..K Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.9
tqTypical turn-off time 200
µs
dv/dt Maximum critical rate of rise of
off-state voltage
IRRM Max. peak reverse and off-state
IDRM leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated VDRM
Parameter ST1200C..K Units Conditions
100 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 16 TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power 3 TJ = TJ max, f = 50Hz, d% = 50
IGM Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
VT
J = 25°C
TJ = 125°C
IGD DC gate current not to trigger 10 mA
Parameter ST1200C..K Units Conditions
20
5.0
Triggering
TYP. MAX.
200 -
100 200
50 -
1.4 -
1.1 3.0
0.9 -
VGD DC gate voltage not to trigger 0.25 V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
TJ = TJ max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
VGT DC gate voltage required
to trigger
IGT DC gate current required
to trigger
W
VT
J = TJ max, tp ≤ 5ms
ST1200C..K Series
4
Bulletin I25196 rev.B 01/00
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TJMax. operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJ-hs Max. thermal resistance, 0.042 DC operation single side cooled
junction to heatsink 0.021 DC operation double side cooled
RthC-hs Max. thermal resistance, 0.006 DC operation single side cooled
case to heatsink 0.003 DC operation double side cooled
F Mounting force, ± 10% 24500 N
(2500) (Kg)
wt Approximate weight 425 g
Parameter ST1200C..K Units Conditions
K/W
°C
Case style A-24 (K-PUK) See Outline Table
K/W
Thermal and Mechanical Specification
Single Side Double Side Single Side Double Side
180°0.003 0.003 0.002 0.002 TJ = TJ max.
120°0.004 0.004 0.004 0.004
90°0.005 0.005 0.005 0.005 K/W
60°0.007 0.007 0.007 0.007
30°0.012 0.012 0.012 0.012
Sinusoidal conduction Rectangular conduction
Conduction angle Units Conditions
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
1- Thyristor
2- Essential part number
3-0 = Converter grade
4-C = Ceramic Puk
5- Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6- K = Puk Case A-24 (K-PUK)
7- 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8- Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
Ordering Information Table
Device Code
5123 4
ST 120 0 C 20 K 1
76 8
ST1200C..K Series
5
Bulletin I25196 rev.B 01/00
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Outline Table
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Case Style A-24 (K-PUK)
All dimensions in millimeters (inches)
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
1 (0.04) MIN.
TWO PLACES 47.5 (1.87) DIA. MAX.
74.5 (2.9) DIA. MA X.
2 HOLES DIA. 3.5 (0.14) x
2.1 (0.1) DEEP
4.75 (0.2) NOM.
27.5 (1.08) M AX .
20° ± 5°
44 (1.73)
CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.
67 (2.6) DIA. MAX.
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
30°
60°
90°
120°
180°
Conduction An
g
le
ST1200C..K Series
(
Sin
g
le Side Cooled
)
R
(
DC
)
= 0.042 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
DC
30°
60°90°
120°
180°
Conduction Period
ST1200C..K Series
(
Sin
g
le Side Cooled
)
R
(
DC
)
= 0.042 K/W
thJ-hs
ST1200C..K Series
6
Bulletin I25196 rev. B 01/00
www.irf.com
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
30
40
50
60
70
80
90
100
110
120
130
0 400 800 1200 1600 2000
30°60°90°120°180°
Conduction An
g
le
ST1200C..K Series
(
Double Side Cooled
)
R
(
DC
)
= 0.021 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 600 1200 1800 2400 3000 360
0
DC
30°
60°90°
120°180°
Conduction Period
ST1200C..K Series
(
Double Side Cooled
)
R
(
DC
)
= 0.021 K/W
thJ-hs
0
500
1000
1500
2000
2500
3000
3500
4000
0 400 800 1200 1600 2000
180°
120°
90°
60°
30°
RMS Limit
Conduction An
g
le
ST1200C..K Series
T = 125°C
J0
1000
2000
3000
4000
5000
0 600 1200 1800 2400 3000 3600
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST1200C..K Series
T = 125°C
J
12000
14000
16000
18000
20000
22000
24000
26000
28000
11010
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At An
y
Rated Load Condition And With
Rated V Applied Followin
g
Sur
g
e.
RRM
ST1200C..K Series
12000
14000
16000
18000
20000
22000
24000
26000
28000
30000
32000
0.01 0.1 1
Versus Pulse Train Duration. Control
Maximum Non Repetitive Sur
g
e Current
Initial T = 125°C
No Volta
g
e Reapplied
Rated V Reapplied
J
RRM
Of Conduction Ma
y
Not Be Maintained.
ST1200C..K Series
ST1200C..K Series
7
Bulletin I25196 rev. B 01/00
www.irf.com
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
100
1000
10000
0.5 1 1.5 2 2.5 3
T = 25°C
J
T = 125°C
J
ST1200C..K Series
0.001
0.01
0.1
0.001 0.01 0.1 1 1
0
Stead
y
State Value
R = 0.042 K/W
(
Sin
g
le Side Cooled
)
R = 0.021 K/W
(
Double Side Cooled
)
(
DC Operation
)
thJ-hs
thJ-hs
ST1200C..K Series
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IG D
(
b
)
(
a
)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(
2
)
a
)
Recommended load line for
b
)
Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fre
q
uenc
y
Limited b
y
PG
(
AV
)
rated di/dt : 20V, 10ohms; tr<=1
µ
s
tr<=1
µ
s
Rectan
g
ular
g
ate pulse
(
3
)
(
1
)
(
1
)
PGM = 10W, tp = 4ms
(
2
)
PGM = 20W, tp = 2ms
(
3
)
PGM = 40W, tp = 1ms
Device: ST1200C..K Series