1CVFD20065A Rev. B
CVFD20065A
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 650-VoltSchottkyRectier
• Reduced VF forImprovedEfciency
• HighHumidityResistance
• ZeroForwardandReverseRecoveryVoltage
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• PowerInverters
• MotorDrives
• EVChargers
• PowerFactorCorrection
• ServerPowerSupplies
Package
TO-220-2
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 650 V
VRSM SurgePeakReverseVoltage 650 V
VDC DCPeakBlockingVoltage 650 V
IFContinuousForwardCurrent 57
26
20
A
TC=25˚C
TC=135˚C
TC=149˚C
IFRM RepetitivePeakForwardSurgeCurrent 91
61.5 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 206
180 ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 1400
1100 ATC=25˚C,tP=10 ms,Pulse
TC=110˚C,tP=10 ms,Pulse
Ptot PowerDissipation 187.5
81 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55 to
+175 ˚C
TO-220MountingTorque 1
8.8
Nm
lbf-in M3Screw
6-32Screw
Part Number Package Marking
CVFD20065A TO-220-2 CVFD20065
VRRM = 650 V
IF (TC=135˚C) = 26 A
Qc  = 62nC
PIN1
PIN2 CASE
2CVFD20065A Rev. B
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.35
1.65
1.45
1.80 VIF = 20 A TJ=25°C
IF = 20 A TJ=175°C
IRReverseCurrent
8
2
80 μA VR=650V,TJ=25°C
VR=400V,TJ=25°C
30
5
300 μA VR=650V,TJ=175°C
VR=400V,TJ=175°C
QCTotalCapacitiveCharge 62 nC
VR = 400 V
di/dt=500A/μs
TJ=25°C
C TotalCapacitance
1100
113
108
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Note:
1. Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 0.8 °C/W
Typical Performance
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
0.04
0.05
0.06
0.07
0.08
0.09
0.10
Reverse Leakage Current, I
RR
(mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0.00
0.01
0.02
0.03
0 100 200 300 400 500 600 700
Reverse Leakage Current, I
Reverse Voltage, V
R
(V)
T
J
= -55 °C
T
J
= 25
°
C
20
30
40
50
60
Foward Current, I
F(A)
T
J
= -55 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 175 °C
T
J
= 125 °C
0
10
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, VF(V)
IF (A)
VF (V) VR (V)
IR (mA)
3CVFD20065A Rev. B
100
125
150
175
200
0
25
50
25 50 75 100 125 150 175
100
150
200
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
0
50
25 50 75 100 125 150 175
Typical Performance
IF(peak) (A)
TC (°C)
PTot (W)
TC (°C)
40
50
60
70
80
90
100
Capacitive Charge, Q
C
(nC)
Conditions:
TJ= 25 °C
0
10
20
30
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
Figure5.RecoveryChargevs.ReverseVoltage
400
600
800
1000
1200
Capacitance (pF)
Conditions:
TJ= 25 °C
Ftest = 1 MHz
Vtest = 25 mV
0
200
400
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
C (pF)
VR (V)
Qrr (nC)
VR (V)
Figure3.CurrentDerating Figure4.PowerDerating
Figure6.Capacitancevs.ReverseVoltage
4CVFD20065A Rev. B
0
5
10
15
20
25
0 100 200 300 400 500 600 700
Typical Performance
1000
10000
IFSM(A)
10
100
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
10000
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy Figure8.Non-RepetitivePeakForwardSurgeCurrent
versusPulseDuration(sinusoidalwaveform)
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
25
20
15
10
5
0
0 100 200 300 400 500 600 700
EC(mJ)
1E-051E-041E-031E-02
Figure9.TransientThermalImpedance
10E
-
3
100E-3
1
Thermal Resistance (oC/W)
0.5
0.3
0.1
0.05
0.02
SinglePulse
1E-3
10E
-
3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Time, tp(s)
0.01
Thermal Resistance (˚C/W)
T (Sec)
5CVFD20065A Rev. B
Recommended Solder Pad Layout
Part Number Package Marking
CVFD20065A TO-220-2 CVFD20065
TO-220-2
A
C
E
D
G
H
B
J
L
M
N
F
P
Q
S
T U
V
W
X
Y
M in M ax M in M ax
A .395 .410 10.033 10.414
B .235 .255 5.969 6.477
C .102 .112 2.591 2.845
D .337 .337 8.560 8.560
E .590 .610 14.986 15.494
F .149 .153 3.785 3.886
G 1.127 1.147 28.626 29.134
H .530 .550 13.462 13.970
J
L .028 .036 .711 .914
M .045 .055 1.143 1.397
N .195 .205 4.953 5.207
P .170 .180 4.318 4.572
Q .048 .054 1.219 1.371
S 3° 5° 3° 5°
T 3° 5° 3° 5°
U 3° 5° 3° 5°
V .100 .110 2.54 2.794
W .014 .021 .356 .533
X 3° 5° 3° 5°
Y .395 .410 10.033 10.414
Z .130 .150 3.302 3.810
Inc h es
M illim eters
P OS
R 0.010 R 0.254
1 2
Z
Package Dimensions
PackageTO-220-2 POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B.235 .255 5.969 6.477
C.100 .120 2.540 3.048
D.223 .337 5.664 8.560
E.590 .615 14.986 15.621
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
J R 0.197 R 0.197
L.025 .036 .635 .914
M .045 .055 1.143 1.397
N.195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U3° 6° 3° 6°
V .094 .110 2.388 2.794
W.014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. DimensionL,M,WapplyforSolderDip
Finish
PIN1
PIN2 CASE
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 CVFD20065A Rev. B
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
• C3D Spice models: http://response.cree.com/Request_Diode_model
• SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
RelatedLinks
Diode Model
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT+If*RT
VT = 1.0081+(TJ*-1.6*10-3)
RT = 0.0146+(TJ*1.7*10-4)
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Cree, Inc.:
CVFD20065A