SEME 2N6496-T257 LAB MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) HIGH CURRENT HIGH POWER HIGH SPEED NPN SILICON TRANSISTOR 1 2 3 12.07 (0.500) 19.05 (0.750) Designed for switching and amplifier circuits in industrial and commercial applications. 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC TO-257 Package. Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO Collector - Base Voltage 150V VCER(sus) Collector - Base Sustaining Voltage RBE 50 W VCEO(sus) Collector - Base Sustaining Voltage With Base Open VEBO Emitter - Base Voltage 7V IC Continuous Collector Current 15A IB Continuous Base Current 5A PD Total Device Dissipation at TC = 25C TSTG Storage Temperature Range -65 to 200C TJ Operating Junction Temperature Range -65 to 175C TL Lead Soldering Temperature RqJC Thermal Resistance Junction - Case Semelab plc. (0.8mm from case for 10 secs.) Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 130V 110V 80W 230C 1.875C / W Prelim. 2/96 SEME 2N6496-T257 LAB Parameter ICEV Collector Cut-off Current IEBO Emitter Cut-off Current hFE* DC Current Gain |hFE| DC Current Gain Test Conditions VCE = 130V Typ. Max. Units VBE = 0 20 TC = 150C 25 VEB = 7V IC = 0 50 mA VCE = 2V IC = 8A 100 -- VCE = 10V IC = 2A f = 5MHz VCEO(sus) Collector - Emitter Sustaining Voltage 1 IC = 0.2A IB = 0 IC = 0.2A IB = 0 VCER(sus) Collector - Emitter Sustaining Voltage 1 Min. RBE 50W 12 12 -- 110 V 130 V 7 V VEBO Emitter - Base Voltage IC = 0 IE = 50mA VBE* Base - Emitter Voltage VCE = 2V IC = 8A 1.6 VCE(sat)* Collector - Emitter Saturation Voltage IC = 8A IB = 0.8A 1.0 VBE(sat)* Base - Emitter Saturation Voltage IC = 8A IB = 0.8A 2.0 Cob Output Capacitance VCB = 10V IE = 0 400 tr Rise Time VCC = 30V 0.5 ts Storage Time IC = 8A 1.5 tf Fall Time IB1 = IB2 = 0.8A 0.5 RqJC Thermal Resistance Junction - Case VCE = 10V IC = 10A mA 1.875 V pF ms C/W Notes * Pulse Test: tp 350ms, d =2% 1) These tests must not be measured on a curve tracer. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 2/96