Surface-Mounted Varactor and Multiplier Devices and Capacitors 48E D MM 0585443 0001334 408 MMALP ALPHA IND/ SEMICONDUCTOR T-07-1% Features Small Outline, Low Parasitics High Reliability Wide Range of Capacitances and Tuning Ratios Excellent Thermal Stability Fully 100% Tested; Tape and Reel Packing Available Description The traditional quality of Alpha varactor devices is available for volume production operations in the form of low cost SOT-23 and other surface-mounted packages. These packages include many of our existing diodes, which feature the same high technology that goes into our high-reliability military devices. Backed by Alpha's extensive experience and its reputation for producing quality RF devices, these pack- ages assure the highest levels of repeatability and specification conformance. Furthermore, they afford a price/performance advantage that combines the essen- tial ingredient of proven design with the latest in fully automated production equipment. This particular combination, coupled with immediate availability, makes this line of Alpha surface-mounted varactor products ideal for mass production commercial applications including mobile radios, cellulartelephones, DBS, and test equipment. Many of Alpha's more popular varactor diodes avail- able as surface-mounted devices are outlined in this data sheet. Low profile SOT packages are also available for PC boards and thin-film circuitry. See Alpha outlines 436-043, 436-046, 436-013, and 436-019. If you do not find the particular device you are looking for, please call Alpha to discuss your specific applications. Applications The high Q abrupt and hyperabrupt tuning diodes available in SOT configuration are ideal for use in os- cillators, filters and phase modulators. The surface mounted hyperabrupt varactor products (SMV1200 Series) offer high tuning ratios (up to 15:1) and are available in a wide range of capacitance specifications (from 4pF to 100 pF measured at 2 volts). Varactor devices for linear frequency tuning application are also available (SMV1204-99), and they represent an ideal choice in applications where the available voltage range is limited and a large change in frequency or phase is desired. Surface-mounted abrupt tuning diodes (SMV1400 Series) offer a high Q which make them suitable for frequency applications up to 5 GHz. Also, the high breakdown voltage versions of these devices (V, up to 60 volts) can be used effectively for wide tuning range applications. Alphas surface-mounted multiplier varactors (SMV1411 Series) offer fast transition time (as low as 70 ps measured with |.=10mA, V,=10 volts, and from 20% to 80% recovery), and are suitable in harmonic genera- tors, upconverters, and comb generators. Absolute Maximum Ratings Parameter Symbol Value Units Reverse Voltage V, |SameasV, | Volts Forward Current I 200 mAdc Power Dissipation Py 250 mW (T,=25C) Junction Temperature T, 150 C Storage Temperature Tq | 65 to +150 C Range 4-36Surface-Mounted Varactor and Multiplier Devices and Capacitors ~ ALPHA IND/ SEMICONDUCTOR 48E D Ml 0585443 0001335 344 MMALP 707-9 Hyperabrupt Tuning Varactors Outline 434-043 Electrical Characteristics cT' @V, c,@V, Tuning? Q; V, I, Upper (pF) (pF) Ratio HA | Frequency Type Number Min.-Max. {Voits) | Min.-Max. (Volts) Typ. | Min. | Max. | Limit (MHz) SMV1200-02 10.5-12.5 @3 4.0-5.7 @68 1.8 200 10 1.0 800 SMV1200-04 10.5-12.5 @3 2.0-2.3 @20 4.6 300 22 0.1 800 SMV1200-05 25.0-31.0 @3 10.0-13.5 @8 1.8 150 10 1.0 800 SMV1200-07 25.0-31.0 @3 4,5-5.1 @20 4.6 200 22 0.1 800 SMV1201-16 45.0-85.0 @2 4,0-7.0 @10 10.0 10 12 1.0 100 SMV1201-20 |} 90.0-150.0 @2 8.0-13.0 @10 10.0 5 12 1.0 50 SMV1202-02 18.0-22.0 @4 7.0-10.5 @8 1.7 150 10 1.0 500 SMV1202-03 18.0-22,0 @4 3.1-3.9 @20 4.6 300 22 0.1 500 SMV1202-07 45.0-65.0 @4 16.0-25.0 @8 1.8 150 10 1.0 500 SMV1202-08 45.0-55.0 @4 7,.3-9.2 @20 4.9 300 22 0.1 500 SMV1202-11 100.0-125.0 @4 35.0-60.0 @8 1.8 150 10 1.0 500 SMV1202-12 [100.0-125.0 @4 15.0-20.0 @20 5.0 300 22 0.1 500 SMV1203-01 8.0-12.0 @ 3 1.8-2.8 @25 4.0 300 30 0.1 800 SMV1203-05 26.0-32.0 @3 4.0-6.4 @25 5.0 300 30 0.1 800 SMV1204-04 2.3-3.2 @4 0.5-0.8 @20 2.5 400 22 0.1 2000 SMV1204-05 4.3-5.3 @4 0.8-1.2 @20 4.0 400 22 0.1 2000 SMV1204-99 14,.5-18.0 @o0 1.2-1.6 @8 9.0 600 22 0.1 2000 Notes: 1. Total capacitance is measured at the indicated voltage at a frequency of 1 MHz. 2. Tuning ratio is defined as the minimum ratio of the capacitance values, i.e. C,(V,/C,(V,). 3. The Q is the figure of merit for the diode. It is specified at a frequency of 50 MHz and at a bias voltage, V,, as indicated for each type number. V, is the breakdown voltage measured at a reverse current of 10 microamps. |, is the reverse leakage current measured at 80% of the beakdown voltage. Q is measured at 4 volts bias on diode types SMV 1204-99. Dual diodes are available in 434-013 outine. NOS 4-37