O3103TN (KT)/71598HA (KT)/3247TA, TS No.2253-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display
Video Output Applications
Ordering number:ENN2253A
2SA1478/2SC3788
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1478
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2042B
[2SA1478/2SC3788]
Features
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high
frequency cahaceteristic
: Cre=1.2pF (NPN), 1.7pF (PNP).
· Adoption of FBET process.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 002)–(V
egatloVrettimE-ot-rotcelloCV
OEC 002)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C001)–(Am
tnerruCrotcelloCkaePI
PC 002)–(Am
noitapissiDrotcelloCP
C3.1W
5W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Tc=25˚C˚C
˚C
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V051)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V01)–(= CAm01)–(=*04*023
tcudorPhtdiwdnaB-niaGf
TVEC I,V03)–(= CAm01)–(=051zHM
* : The 2SA1478/2SC3788 are classified by 10mA hFE as follows: Continued on next page.
knaRCDEF
hEF 08ot04021ot06002ot001023ot061
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
4.0
1.0
1.0
8.0
1.6
0.8
0.8
0.75
1.5
7.5
3.0 1.4
11.0
15.5
3.3
3.0
0.7
2.4 4.8
1.7
123
No.2253-2/5
2SA1478/2SC3788
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
ecnaticapaCtuptuOC
bo VBC zHM1=f,V03)–(= 7.1Fp
)6.2(Fp
ecnaticapaCrefsnarTesreveRC
er zHM1=f,V03)–(=BCV 2.1Fp
)7.1(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am02)–(= BAm2)–(=6.0)–(V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am02)–(= BAm2)–(=0.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=002)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞002)–(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=5)–(V
ITR03743
IC -- VCE
0
--
1
--
2
--
3
--
4
--
5
--
6
--
7
--
8
--
9
--
10
--
1
--
2
--
3
--
4
--
5
--
6
--
7
--
8
IB=0
ITR03744
IC -- VCE
1067 89123450
0
2
4
6
8
10
12
14
16
18
20
2SA1478
IB=0
2SC3788
ITR03745
IC -- VCE
0
--
20
--
40
--
60
--
80
--
100
0
--
4
--
2
--
6
--
8
--
10
IB=0
ITR03746
IC -- VCE
60 70 80 1009040 5020 30100
0
2
3
1
4
5
6
7
8
9
10
2SA1478
IB=0
2SC3788
--40µA
--50µA
--30µA
--20µA
--10µA
60µA
70µA
80µA
50µA
40µA
30µA
20µA
10µA
--40µA
--50µA
--30µA
--10µA
--20µA
80µA
100µA
120µA
140µA
160µA
60µA
40µA
20µA
ITR03747
IC -- VBE
0
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
0
--
20
--
40
--
60
--
80
--
100
--
120
2SA1478
VCE=10V
Ta=75
°C
25
°C
--25
°C
ITR03748
IC -- VBE
0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120
2SC3788
VCE=10V
Ta=75°C
25
°C
--25
°C
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
No.2253-3/5
2SA1478/2SC3788
--
1.0 23 35757
--
10 7
--
100
522
7
100
10
5
7
5
2
3
5
3
2
ITR03751
fT -- IC2SA1478
VCE=–30V
1.0 23 35757 10 7100
522
7
100
10
5
2
3
7
1000
5
3
2
ITR03752
fT -- IC2SC3788
VCE=30V
7
--
10 27
--
100 23
--
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03753
Cob -- VCB 2SA1478
f=1MHz 2SC3788
f=1MHz
710 27
100 23
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03754
Cob -- VCB
7
--
10 27
--
100 2
3
--
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03755
Cre -- VCB 2SA1478
f=1MHz 2SC3788
f=1MHz
710 27
100 23
1.0 23 5575
1.0
7
10
5
7
5
3
2
2
ITR03756
Cre -- VCB
1000
100
10
ITR03749
hFE -- IChFE -- IC
235757 7
3
25 2
--
1.0
--
10
--
100
2
3
5
7
7
2
3
5
1.0 37723 575 10 100
522
7
10
5
100
5
3
2
3
2
ITR03750
2SA1478
VCE=–10V 2SC3788
VCE=10V
Ta=75°C
25
°C
--25°C
Ta=75
°C
25
°C
--25°C
DC Current Gain, hFE
Collector Current, IC–mA
DC Current Gain, hFE
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–mA
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Voltage, VCB -- V
Reverse Transfer Capacitance, Cre – pF
Collector-to-Base Voltage, VCB -- V
No.2253-4/5
2SA1478/2SC3788
0 20 40 60 80 100 120 140 160
0
2
1
1.3
3
6
4
5
PC -- Ta
ITR03762
ITR03759
VBE(sat) -- IC
557
--
10 22
--
1.0 233577
--
100
--
1.0
--
10
5
7
3
5
7
3
2
2SA1478
IC / IB=10
ITR03760
VBE(sat) -- IC
7557 10 2
1.0 23357
100
3
1.0
5
3
5
7
2
10
7
2SC3788
IC / IB=10
ITR03761
A S O
DC operation
(Ta=25
°C)
DC operation
10ms
1ms
500µs
10
3
5
7
2
2
3
5
3
2355
7
57 100 23
10
7
2
100
ICP=200mA
IC=100mA
2SA1478 / 2SC3788 2SA1478 / 2SC3788
ITR03757
VCE(sat) -- IC
557
--
10 22
--
1.0 233577
--
100
--
0.1
--
1.0
5
3
5
7
7
2
3
2
2SA1478
IC / IB=10
ITR03758
VCE(sat) -- IC
557 10 2
1.0 233577100
0.1
7
1.0
5
7
3
3
5
2
2SC3788
IC / IB=10
(Tc=25
°C)
No heat sink
(For PNP, minus sign is omitted.)
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
Collector Current, IC– mA Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Collector Dissipation, P
C
–W
Ambient Temperature, Ta – ˚C
PS No.2253-5/5
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SA1478/2SC3788
