APT35GN120BG - Microsemi - Product.Network

050-7601 Rev D 7-2009

APT35GN120B_S(G)

TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁ ed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250µA)

Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Intergrated Gate Resistor

Symbol

V(BR)CES

VGE(TH)

VCE(ON)

ICES

IGES

RGINT

Units

Volts

µA

nA

Ω

Symbol

VCES

VGE

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT35GN120B_S(G)

1200

±30

94

46

105

105A @ 1200V

379

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1 @ TC = 150°C

Switching Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s

have a very short, low amplitude tail current and low Eoff. The Trench Gate design

results in superior VCE(on) performance. Easy paralleling results from very tight

parameter distribution and slightly positive VCE(on) temperature coefﬁ cient. Built-in

gate resistance ensures ultra-reliable operation. Low gate charge simpliﬁ es gate drive

design and minimizes losses.

• 1200V NPT Field Stop

• Trench Gate: Low VCE(on)

• Easy Paralleling

• 10µs Short Circuit Capability

• Intergrated Gate Resistor: Low EMI, High Reliability

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MIN TYP MAX

1200

5 5.8 6.5

1.4 1.7 2.1

1.9

100

TBD

600

6

G

C

E

APT35GN120B APT35GN120S

APT35GN120BG APT35GN120SG

1200V

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

TO-247

GCE

D3PAK

G

C

E

(S)

(B)

Microsemi Website - http://www.microsemi.com

050-7601 Rev D 7-2009

APT35GN120B_S(G)

DYNAMIC CHARACTERISTICS

Symbol

Cies

Coes

Cres

VGEP

Qg

Qge

Qgc

SSOA

SCSOA

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

Test Conditions

Capacitance

VGE = 0V, VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCE = 600V

IC = 35A

TJ = 150°C, RG = 2.2Ω 7, VGE =

15V, L = 100µH,VCE = 1200V

VCC = 960V, VGE = 15V,

TJ = 125°C, RG = 2.2Ω 7

Inductive Switching (25°C)

VCC = 800V

VGE = 15V

IC = 35A

RG = 2.2Ω 7

TJ = +25°C

Inductive Switching (125°C)

VCC = 800V

VGE = 15V

IC = 35A

RG = 2.2Ω 7

TJ = +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Short Circuit Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4

Turn-on Switching Energy (Diode) 5

Turn-off Switching Energy 6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4 4

Turn-on Switching Energy (Diode) 55

Turn-off Switching Energy 66

MIN TYP MAX

2500

150

120

9.5

220

15

130

105

10

24

22

300

55

TBD

2395

2315

24

22

365

100

TBD

3745

3435

UNIT

pF

V

nC

A

µs

ns

µJ

ns

µJ

UNIT

°C/W

gm

MIN TYP MAX

.33

N/A

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

RθJC

WT

THERMAL AND MECHANICAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. (See Figure 24.)

5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6 E

off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)

Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained herein.

050-7601 Rev D 7-2009

APT35GN120B_S(G)

TYPICAL PERFORMANCE CURVES

BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

I

C, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

IC = 35A

TJ = 25°C

250µs PULSE

TEST<0.5 % DUTY

CYCLE

120

100

80

60

40

20

0

100

80

60

40

20

0

4

3.5

3

2.5

2

1.5

1.0

0.5

0

1.10

1.05

1.00

0.95

0.90

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

3

2.5

2

1.5

1

0.5

0

140

120

100

80

60

40

20

0

VCE = 600V

VCE = 240V

VCE = 960V

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)

VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

15V

11V

9V

8V

12V

10V

7V

15V

11V

10V

9V

12V

8V

7V

TJ = 125°C

TJ = 25°C

TJ = -55°C

TJ = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 70A

IC = 35A

IC = 17.5A

VGE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 70A

IC = 35A

IC = 17.5A

0 2 4 6 8 10 12 0 2 4 6 8 10 12 14

0 2 4 6 8 10 12 14 0 50 100 150 200 250

8 10 12 14 16 -50 -25 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

Lead Temperature

Limited

Lead Temperature

Limited

050-7601 Rev D 7-2009

APT35GN120B_S(G)

VGE =15V,TJ=125°C

VGE =15V,TJ=25°C

VCE = 800V

RG = 2.2Ω

L = 100 µH

SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)

SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)

I

CE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current

ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current

I

CE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current

R

G, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature

VCE = 800V

VGE = +15V

RG = 2.2Ω

RG = 2.2Ω, L = 100µH, VCE = 800V

VCE = 800V

TJ = 25°C, TJ =125°C

RG = 2.2Ω

L = 100 µH

30

25

20

15

10

5

0

80

70

60

50

40

30

20

10

0

12000

10000

8000

6000

4000

2000

0

25000

20000

15000

10000

5000

0

VGE = 15V

TJ = 25°C, VGE = 15V

VCE = 800V

VGE = +15V

RG = 2.2Ω

VCE = 800V

VGE = +15V

RG = 2.2Ω

Eon2,70A

Eoff,70A

Eoff,35A

Eon2,35A

Eon2,17.5A

Eoff,17.5A

Eon2,70A

Eoff,70A

Eon2,35A

Eoff,35A

Eon2,17.5A Eoff,17.5A

VCE = 800V

VGE = +15V

TJ = 125°C

RG = 2.2Ω, L = 100µH, VCE = 800V

450

350

300

250

200

150

100

50

0

150

125

100

75

50

25

0

8000

7000

6000

5000

4000

3000

2000

1000

0

12000

10000

8000

6000

4000

2000

0

TJ = 125°C, VGE = 15V

TJ = 25°C, VGE = 15V

TJ = 25°C,VGE =15V

TJ = 125°C,VGE =15V

TJ = 125°C, VGE = 15V

TJ = 25 or 125°C,VGE = 15V

10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80

0 10 20 30 40 50 0 25 50 75 100 125

050-7601 Rev D 7-2009

APT35GN120B_S(G)

TYPICAL PERFORMANCE CURVES

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0

ZθJC, THERMAL IMPEDANCE (°C/W)

0.3

0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

10-5 10-4 10-3 10-2 10-1 1.0

4,000

1,000

500

100

50

10

120

100

80

60

40

20

0

C, CAPACITANCE (PF)

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE

Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400

10 20 30 40 50 60 70

FMAX, OPERATING FREQUENCY (kHz)

IC, COLLECTOR CURRENT (A)

Figure 20, Operating Frequency vs Collector Current

140

10

1

C0es

Cres

0.5

0.1

0.05

Fmax = min (fmax, f max2)

0.05

fmax1 =

t d(on) + tr + td(off) + tf

Pdiss - Pcond

Eon2

+ E off

fmax2 =

Pdiss = TJ - T C

RθJC

Cies

TJ = 125°C

TC = 75°C

D = 50 %

VCE = 800V

RG = 2.2Ω

Peak T

J

= P

DM

x Z

θJC + TC

Duty Factor D = t1/t2

t2

t1

P

DM

Note:

050-7601 Rev D 7-2009

APT35GN120B_S(G)

Figure 22, Turn-on Switching Waveforms and Deﬁ nitions

Figure 23, Turn-off Switching Waveforms and Deﬁ nitions

TJ = 125°C

Collector Current

CollectorVoltage

Gate Voltage

Switching Energy

5%

10%

td(on)

90%

10%

tr

5%

TJ = 125°C

CollectorVoltage

Collector Current

Gate Voltage

Switching Energy

0

90%

td(off)

10%

tf

90%

*DRIVER SAME TYPE AS D.U.T.

I

C

V

CLAMP

100uH

V

TEST

A

B

D.U.T.

DRIVER*

V

CE

Figure 24, EON1 Test Circuit

I

C

A

D.U.T.

V

CE

Figure 21, Inductive Switching Test Circuit

V

CC

APT40DQ120

TO-247 Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Collector

Emitter

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Collector)

and Leads are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Collector

(Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Collector

Emitter

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

D3PAK Package Outline

e1 SAC: Tin, Silver, Copper e3 SAC: Tin, Silver, Copper

Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583

4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262