Preliminary Technical Information TrenchHVTM Power MOSFET IXTH102N20T IXTQ102N20T IXTV102N20T = 200 V = 102 A 23 m VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 200 V VGSM Transient 30 V ID25 ILRMS IDM TC = 25C Lead Current Limit, RMS TC = 25C, pulse width limited by TJM 102 75 250 A A A IAS EAS TC = 25C TC = 25C 5 1.2 A J dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS TJ 175C, RG = 2.5 7 V/ns PD TC = 25C 750 W -55 ... +175 175 -55 ... +175 C C C 300 260 C C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-247 & TO-3P) FC Mounting force (PLUS220) Weight TO-247 TO-3P PLUS220 Symbol Test Conditions (TJ = 25C unless otherwise specified) G D (TAB) S TO-3P (IXTQ) G D (TAB) S PLUS220 (IXTV) 1.13 / 10 Nm/lb.in. 11..65 / 2.5..14.6 N/lb. 6 5.5 4 g g g G G = Gate S = Source D (TAB) S D = Drain TAB = Drain Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 200 VGS(th) VDS = VGS, ID = 1 mA 2.5 IGSS VGS = 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TO-247 (IXTH) V TJ = 150C VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 18 4.5 V 200 nA 5 250 A A 23 m Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 C Operating Temperature Advantages Easy to mount z Space savings z High power density z DS99821 (04/07) (c) 2007 IXYS CORPORATION, All rights reserved IXTH102N20T IXTQ102N20T IXTV102N20T Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) gfs VDS= 10 V; ID = 0.5 ID25, Note 1 Typ. 55 92 S 6800 pF 722 pF 126 pF Ciss Coss TO-247AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Crss Max. td(on) Resistive Switching Times 19 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 ns td(off) RG = 2.5 (External) 50 ns 25 ns 114 nC 34 nC 31 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd RthJC 0.20 C/W RthCS 0.25 C/W Source-Drain Diode Symbol Test Conditions TJ = 25C unless otherwise specified) Min. Characteristic Values Typ. Max. IS VGS = 0 V 102 A ISM Pulse width limited by TJM 330 A VSD IF = 50 A, VGS = 0 V, Note 1 1.2 V trr IF = 50 A, -di/dt = 100 A/s 130 ns 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline VR = 50 V, VGS = 0 V Notes: 1. Pulse test, t 300 ms, duty cycle, d 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. PLUS220 (IXTV) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH102N20T IXTQ102N20T IXTV102N20T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 110 240 V GS = 10V 8V 7V 100 90 200 180 7V 160 70 ID - Amperes ID - Amperes 80 6V 60 50 40 30 140 120 100 6V 80 60 20 40 5V 10 20 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 5V 0 2 4 6 8 10 12 14 16 18 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150C Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature 110 20 3.5 V GS = 10V 8V 7V 100 90 VGS = 10V 3.0 70 RDS(on) - Normalized 80 I D - Amperes VGS = 10V 9V 8V 220 6V 60 50 40 30 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 10 0 0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current 50 75 100 125 150 175 Fig. 6. Drain Current vs. Case Temperature 5.0 90 V GS = 10V 4.5 External Lead Current Limit 80 4.0 70 TJ = 175C 3.5 60 I D - Amperes RDS(on) - Normalized 25 T J - Degrees Centigrade VDS - Volts 3.0 2.5 50 40 2.0 30 1.5 20 1.0 10 TJ = 25C 0 0.5 0 20 40 60 80 100 120 140 I D - Amperes (c) 2007 IXYS CORPORATION, All rights reserved 160 180 200 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 175 IXTH102N20T IXTQ102N20T IXTV102N20T Fig. 7. Input Admittance Fig. 8. Transconductance 180 160 160 140 120 120 g f s - Siemens I D - Amperes 140 TJ = - 40C 100 80 TJ = 150C 25C - 40C 60 25C 100 80 150C 60 40 40 20 20 0 0 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 0 20 40 60 80 VGS - Volts 100 120 140 160 180 200 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 9 250 V DS = 100V I D = 25A 8 7 200 VGS - Volts I S - Amperes I G = 10mA 150 TJ = 150C 100 6 5 4 3 TJ = 25C 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 1.3 10 20 30 40 50 60 70 80 90 100 110 120 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 10,000 1.00 Capacitance - PicoFarads 1,000 Z(th)JC - C / W C iss f = 1 MHz C oss 0.10 C rss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH102N20T IXTQ102N20T IXTV102N20T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 27 27 RG = 2.5 26 V GS = 15V 26 25 24 TJ = 25C RG = 2.5 t r - Nanoseconds t r - Nanoseconds V DS = 100V I D = 102A 23 V GS = 15V 25 V DS = 100V 24 23 I D = 51A 22 TJ = 125C 22 21 21 25 35 45 55 65 75 85 95 105 115 125 50 55 60 65 70 T J - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance TJ = 125C, V GS = 15V 25 70 t r - Nanoseconds 22 I D = 102A, 51A 24 21 22 20 7 8 9 60 22 55 21 td(off) - - - - tf 20 18 10 25 35 45 75 85 95 105 115 35 125 67 70 tf td(off) - - - - 150 65 TJ = 125C, V GS = 15V 140 60 VDS = 100V 130 TJ = 25C 58 23 55 22 52 TJ = 25C 49 t f - Nanoseconds 61 160 55 120 50 110 I D = 51A, 102A 45 100 40 90 35 80 30 70 20 46 25 60 19 43 20 50 40 100 105 15 TJ = 125C 18 50 55 60 65 70 75 80 85 90 95 I D - Amperes (c) 2007 IXYS CORPORATION, All rights reserved t d ( o f f ) - Nanoseconds 75 64 25 21 65 70 t d ( o f f ) - Nanoseconds t f - Nanoseconds td(off) - - - - V DS = 100V 24 55 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance RG = 2.5, V GS = 15V 26 40 T J - Degrees Centigrade 28 TJ = 125C 45 VDS = 100V Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 27 50 I D = 102A RG - Ohms tf 65 23 19 19 6 I D = 51A 24 RG = 2.5, VGS = 15V 20 5 105 t d ( o f f ) - Nanoseconds 23 t d ( o n ) - Nanoseconds 28 4 100 25 24 3 95 75 V DS = 100V 2 90 26 30 26 85 26 td(on) - - - - t f - Nanoseconds 32 80 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 34 tr 75 I D - Amperes 40 2 3 4 5 6 7 8 9 10 RG - Ohms IXYS REF: T_102N20T (7W) 4-13-07-A.xls